Novel test structures for dedicated temperature budget determination

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    Abstract

    We present a novel method for determining the temperature budget of the process side of silicon substrates and chips, based on well-known silicide formation reactions of metal–Si systems and (four-point probe) resistance measurements. In this paper, we focus on the Pd–Si system that is most temperature sensitive in the range from 100 °C to 200 °C. A variety of test structures is introduced to exploit the specific properties of the diffusion-limited reaction between Pd and Si. Among others, this resulted in gap-based layouts that facilitate an extension of the temperature range to 350 °C. Designs and measurement results are presented, indicating the practicality and the robustness of the proposed technique.
    Original languageUndefined
    Pages (from-to)339-345
    Number of pages7
    JournalIEEE transactions on semiconductor manufacturing
    Volume25
    Issue number3
    DOIs
    Publication statusPublished - 1 Aug 2012

    Keywords

    • EWI-22224
    • Metallization
    • Silicon on insulator technology
    • IR-81449
    • process monitoring
    • METIS-287995
    • Temperature measurement

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