Novel test structures for dedicated temperature budget determination

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)

Abstract

We present a novel method for determining the temperature budget of the process side of silicon substrates and chips, based on well-known silicide formation reactions of metal–Si systems and (four-point probe) resistance measurements. In this paper, we focus on the Pd–Si system that is most temperature sensitive in the range from 100 °C to 200 °C. A variety of test structures is introduced to exploit the specific properties of the diffusion-limited reaction between Pd and Si. Among others, this resulted in gap-based layouts that facilitate an extension of the temperature range to 350 °C. Designs and measurement results are presented, indicating the practicality and the robustness of the proposed technique.
Original languageUndefined
Pages (from-to)339-345
Number of pages7
JournalIEEE transactions on semiconductor manufacturing
Volume25
Issue number3
DOIs
Publication statusPublished - 1 Aug 2012

Keywords

  • EWI-22224
  • Metallization
  • Silicon on insulator technology
  • IR-81449
  • process monitoring
  • METIS-287995
  • Temperature measurement

Cite this

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title = "Novel test structures for dedicated temperature budget determination",
abstract = "We present a novel method for determining the temperature budget of the process side of silicon substrates and chips, based on well-known silicide formation reactions of metal–Si systems and (four-point probe) resistance measurements. In this paper, we focus on the Pd–Si system that is most temperature sensitive in the range from 100 °C to 200 °C. A variety of test structures is introduced to exploit the specific properties of the diffusion-limited reaction between Pd and Si. Among others, this resulted in gap-based layouts that facilitate an extension of the temperature range to 350 °C. Designs and measurement results are presented, indicating the practicality and the robustness of the proposed technique.",
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Novel test structures for dedicated temperature budget determination. / Faber, Erik Jouwert; Wolters, Robertus A.M.; Schmitz, Jurriaan.

In: IEEE transactions on semiconductor manufacturing, Vol. 25, No. 3, 01.08.2012, p. 339-345.

Research output: Contribution to journalArticleAcademicpeer-review

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T1 - Novel test structures for dedicated temperature budget determination

AU - Faber, Erik Jouwert

AU - Wolters, Robertus A.M.

AU - Schmitz, Jurriaan

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N2 - We present a novel method for determining the temperature budget of the process side of silicon substrates and chips, based on well-known silicide formation reactions of metal–Si systems and (four-point probe) resistance measurements. In this paper, we focus on the Pd–Si system that is most temperature sensitive in the range from 100 °C to 200 °C. A variety of test structures is introduced to exploit the specific properties of the diffusion-limited reaction between Pd and Si. Among others, this resulted in gap-based layouts that facilitate an extension of the temperature range to 350 °C. Designs and measurement results are presented, indicating the practicality and the robustness of the proposed technique.

AB - We present a novel method for determining the temperature budget of the process side of silicon substrates and chips, based on well-known silicide formation reactions of metal–Si systems and (four-point probe) resistance measurements. In this paper, we focus on the Pd–Si system that is most temperature sensitive in the range from 100 °C to 200 °C. A variety of test structures is introduced to exploit the specific properties of the diffusion-limited reaction between Pd and Si. Among others, this resulted in gap-based layouts that facilitate an extension of the temperature range to 350 °C. Designs and measurement results are presented, indicating the practicality and the robustness of the proposed technique.

KW - EWI-22224

KW - Metallization

KW - Silicon on insulator technology

KW - IR-81449

KW - process monitoring

KW - METIS-287995

KW - Temperature measurement

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DO - 10.1109/TSM.2012.2202793

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