Novel test structures for temperature budget determination during wafer processing

Erik Jouwert Faber, Robertus A.M. Wolters, Jurriaan Schmitz

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    Temperature is a crucial parameter in many planar technology processing steps. However, the determination of the actual temperature history at the device side of the substrate is not straightforward. We present a novel method for determining the temperature history of the process side of silicon wafers and chips, which is based on well-known silicide formation reactions of metal-Si systems and is determined via (4 point probe) resistance measurements. In this case we explored the Pd-Si system which has a suitable operating range from 100-200°C. We propose a method based on metal layers patterned in different line configurations (using the width and number of the lines as parameters) and anticipate that silicide developments at these structures is geometrically dependent and hence can provide a way for obtaining a refined temperature information. First experiments on bulk Si wafers show that the proposed method yields predictable and stable results.
    Original languageUndefined
    Title of host publicationIEEE International Conference on Microelectronic Test Structures (ICMTS), 2010
    Place of PublicationPiscataway
    Number of pages4
    ISBN (Print)978-1-4244-6912-3
    Publication statusPublished - 22 Mar 2010
    Event23rd IEEE International Conference on Microelectronic Test Structures, ICMTS 2010 - Hirosjima, Japan
    Duration: 22 Mar 201025 Mar 2010
    Conference number: 23

    Publication series

    PublisherIEEE Computer Society Press


    Conference23rd IEEE International Conference on Microelectronic Test Structures, ICMTS 2010
    Abbreviated titleICMTS
    Internet address


    • METIS-270927
    • SC-RID: Radiation Imaging detectors
    • EWI-18182
    • IR-72452

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