Nucleation control for high quality polycrystalline GExSI1-x thin film transistors

J.B. Rem, J. Holleman, J.F. Verweij

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	Undefined
Title of host publication	Proceedings of the 25th European Solid State Device Research Conference, ESSDERC'95
Place of Publication	The Netherlands Congress Centre, The Hague
Pages	683-686
Publication status	Published - 25 Sept 1995

Keywords

@inproceedings{52672be3295741b1ae46c932c442f726,

title = "Nucleation control for high quality polycrystalline GExSI1-x thin film transistors",

keywords = "METIS-113986",

author = "J.B. Rem and J. Holleman and J.F. Verweij",

year = "1995",

month = sep,

day = "25",

language = "Undefined",

pages = "683--686",

booktitle = "Proceedings of the 25th European Solid State Device Research Conference, ESSDERC'95",

}

Nucleation control for high quality polycrystalline GExSI1-x thin film transistors. / Rem, J.B.; Holleman, J.; Verweij, J.F.
Proceedings of the 25th European Solid State Device Research Conference, ESSDERC'95. The Netherlands Congress Centre, The Hague, 1995. p. 683-686.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Nucleation control for high quality polycrystalline GExSI1-x thin film transistors

AU - Rem, J.B.

AU - Holleman, J.

AU - Verweij, J.F.

PY - 1995/9/25

Y1 - 1995/9/25

KW - METIS-113986

M3 - Conference contribution

SP - 683

EP - 686

BT - Proceedings of the 25th European Solid State Device Research Conference, ESSDERC'95

CY - The Netherlands Congress Centre, The Hague

ER -