Numerical analysis of electromigration in thin film VLSI interconnections

V. Petrescu, A.J. Mouthaan, W. Schoenmaker, S. Angelescu, R. Vissarion, G. Dima, Hans Wallinga, M.D. Profirescu

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    1 Citation (Scopus)
    66 Downloads (Pure)

    Abstract

    Due to the continuing downscaling of the dimensions in VLSI circuits, electromigration is becoming a serious reliability hazard. A software tool based on finite element analysis has been developed to solve the two partial differential equations of the two particle vacancy/imperfection model. Simulation results of the complex grain structure of Al thin films show a very good match with experimental results
    Original languageEnglish
    Title of host publication1995 International Semiconductor Conference, CAS '95 : proceedings
    Place of PublicationPiscataway, NJ, USA
    PublisherIEEE
    Pages327-330
    Number of pages4
    ISBN (Print)0-7803-2647-4
    DOIs
    Publication statusPublished - 11 Oct 1995
    Event1995 International Semiconductor Conference, CAS '95, Sinaia, Romania, 11-14 October 1995: 1995 International Semiconductor Conference, CAS '95 : proceedings -
    Duration: 11 Oct 1995 → …

    Publication series

    Name
    PublisherIEEE

    Conference

    Conference1995 International Semiconductor Conference, CAS '95, Sinaia, Romania, 11-14 October 1995
    Period11/10/95 → …

    Keywords

    • IR-96428
    • METIS-113833

    Fingerprint Dive into the research topics of 'Numerical analysis of electromigration in thin film VLSI interconnections'. Together they form a unique fingerprint.

    Cite this