@inproceedings{6af1ed816ffc46af866cd84d3a0cfebe,
title = "Numerical analysis of electromigration in thin film VLSI interconnections",
abstract = "Due to the continuing downscaling of the dimensions in VLSI circuits, electromigration is becoming a serious reliability hazard. A software tool based on finite element analysis has been developed to solve the two partial differential equations of the two particle vacancy/imperfection model. Simulation results of the complex grain structure of Al thin films show a very good match with experimental results",
keywords = "IR-96428, METIS-113833",
author = "V. Petrescu and A.J. Mouthaan and W. Schoenmaker and S. Angelescu and R. Vissarion and G. Dima and Hans Wallinga and M.D. Profirescu",
year = "1995",
month = oct,
day = "11",
doi = "10.1109/SMICND.1995.494928",
language = "English",
isbn = "0-7803-2647-4",
publisher = "IEEE",
pages = "327--330",
booktitle = "1995 International Semiconductor Conference, CAS '95 : proceedings",
address = "United States",
note = "1995 International Semiconductor Conference, CAS '95, Sinaia, Romania, 11-14 October 1995 : 1995 International Semiconductor Conference, CAS '95 : proceedings ; Conference date: 11-10-1995",
}