Numerical analysis of the dynamic thermal behavior of RF bipolar transistors

Salvatore Russo, Vincenzo D’Alessandro, Niccolò Rinaldi, Massimiliano De Magistris, Luigi La Spina, Lis K. Nanver

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

A 3-D FEM simulator is calibrated to accurately predict the transient thermal behavior of RF transistors. Besides, an in-house code is developed to extract an optimized Foster network for the description of the thermal impedance of the devices, thus allowing the analysis of the thermal response in the frequency domain. Both tools are successfully employed to study the thermal dynamics of silicon-on-glass BJTs.

Original languageEnglish
Title of host publicationFirst International conference on Computational Methods for Thermal Problems, ThermaComp2009
Pages345-348
Number of pages4
Edition223599
Publication statusPublished - 2009
Externally publishedYes
Event1st International Conference on Computational Methods for Thermal Problems, 2009 - Naples, Italy
Duration: 8 Sep 200910 Sep 2009
Conference number: 1

Publication series

NameInternational Conference on Computational Methods for Thermal Problems
ISSN (Print)2305-5995

Conference

Conference1st International Conference on Computational Methods for Thermal Problems, 2009
Abbreviated titleThermaComp 2009
CountryItaly
CityNaples
Period8/09/0910/09/09

Keywords

  • Bipolar junction transistors (BJTs)
  • Finite-element method (FEM)
  • Heat transfer
  • Silicon-on-glass (SOG)
  • Thermal impedance
  • Thermal networks
  • Thermal resistance

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