Numerical analysis of the dynamic thermal behavior of RF bipolar transistors

Salvatore Russo; Vincenzo D’Alessandro; Niccolò Rinaldi; Massimiliano De Magistris; Luigi La Spina; Lis K. Nanver

Numerical analysis of the dynamic thermal behavior of RF bipolar transistors

Salvatore Russo, Vincenzo D’Alessandro, Niccolò Rinaldi, Massimiliano De Magistris, Luigi La Spina, Lis K. Nanver

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

A 3-D FEM simulator is calibrated to accurately predict the transient thermal behavior of RF transistors. Besides, an in-house code is developed to extract an optimized Foster network for the description of the thermal impedance of the devices, thus allowing the analysis of the thermal response in the frequency domain. Both tools are successfully employed to study the thermal dynamics of silicon-on-glass BJTs.

Original language	English
Title of host publication	First International conference on Computational Methods for Thermal Problems, ThermaComp2009
Pages	345-348
Number of pages	4
Edition	223599
Publication status	Published - 2009
Externally published	Yes
Event	1st International Conference on Computational Methods for Thermal Problems, 2009 - Naples, Italy Duration: 8 Sept 2009 → 10 Sept 2009 Conference number: 1

Publication series

Name	International Conference on Computational Methods for Thermal Problems
ISSN (Print)	2305-5995

Conference

Conference	1st International Conference on Computational Methods for Thermal Problems, 2009
Abbreviated title	ThermaComp 2009
Country/Territory	Italy
City	Naples
Period	8/09/09 → 10/09/09

Keywords

Bipolar junction transistors (BJTs)
Finite-element method (FEM)
Heat transfer
Silicon-on-glass (SOG)
Thermal impedance
Thermal networks
Thermal resistance

Cite this

Russo, S., D’Alessandro, V., Rinaldi, N., De Magistris, M., La Spina, L., & Nanver, L. K. (2009). Numerical analysis of the dynamic thermal behavior of RF bipolar transistors. In First International conference on Computational Methods for Thermal Problems, ThermaComp2009 (223599 ed., pp. 345-348). (International Conference on Computational Methods for Thermal Problems).

@inproceedings{e5b53d3f55504abab5f227394a47501a,

title = "Numerical analysis of the dynamic thermal behavior of RF bipolar transistors",

abstract = "A 3-D FEM simulator is calibrated to accurately predict the transient thermal behavior of RF transistors. Besides, an in-house code is developed to extract an optimized Foster network for the description of the thermal impedance of the devices, thus allowing the analysis of the thermal response in the frequency domain. Both tools are successfully employed to study the thermal dynamics of silicon-on-glass BJTs.",

keywords = "Bipolar junction transistors (BJTs), Finite-element method (FEM), Heat transfer, Silicon-on-glass (SOG), Thermal impedance, Thermal networks, Thermal resistance",

author = "Salvatore Russo and Vincenzo D{\textquoteright}Alessandro and Niccol{\`o} Rinaldi and \{De Magistris\}, Massimiliano and \{La Spina\}, Luigi and Nanver, \{Lis K.\}",

year = "2009",

language = "English",

series = "International Conference on Computational Methods for Thermal Problems",

pages = "345--348",

booktitle = "First International conference on Computational Methods for Thermal Problems, ThermaComp2009",

edition = "223599",

note = "1st International Conference on Computational Methods for Thermal Problems, 2009, ThermaComp 2009 ; Conference date: 08-09-2009 Through 10-09-2009",

}

Russo, S, D’Alessandro, V, Rinaldi, N, De Magistris, M, La Spina, L & Nanver, LK 2009, Numerical analysis of the dynamic thermal behavior of RF bipolar transistors. in First International conference on Computational Methods for Thermal Problems, ThermaComp2009. 223599 edn, International Conference on Computational Methods for Thermal Problems, pp. 345-348, 1st International Conference on Computational Methods for Thermal Problems, 2009, Naples, Italy, 8/09/09.

Numerical analysis of the dynamic thermal behavior of RF bipolar transistors. / Russo, Salvatore; D’Alessandro, Vincenzo; Rinaldi, Niccolò et al.
First International conference on Computational Methods for Thermal Problems, ThermaComp2009. 223599. ed. 2009. p. 345-348 (International Conference on Computational Methods for Thermal Problems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Numerical analysis of the dynamic thermal behavior of RF bipolar transistors

AU - Russo, Salvatore

AU - D’Alessandro, Vincenzo

AU - Rinaldi, Niccolò

AU - De Magistris, Massimiliano

AU - La Spina, Luigi

AU - Nanver, Lis K.

N1 - Conference code: 1

PY - 2009

Y1 - 2009

N2 - A 3-D FEM simulator is calibrated to accurately predict the transient thermal behavior of RF transistors. Besides, an in-house code is developed to extract an optimized Foster network for the description of the thermal impedance of the devices, thus allowing the analysis of the thermal response in the frequency domain. Both tools are successfully employed to study the thermal dynamics of silicon-on-glass BJTs.

AB - A 3-D FEM simulator is calibrated to accurately predict the transient thermal behavior of RF transistors. Besides, an in-house code is developed to extract an optimized Foster network for the description of the thermal impedance of the devices, thus allowing the analysis of the thermal response in the frequency domain. Both tools are successfully employed to study the thermal dynamics of silicon-on-glass BJTs.

KW - Bipolar junction transistors (BJTs)

KW - Finite-element method (FEM)

KW - Heat transfer

KW - Silicon-on-glass (SOG)

KW - Thermal impedance

KW - Thermal networks

KW - Thermal resistance

M3 - Conference contribution

AN - SCOPUS:85064499670

T3 - International Conference on Computational Methods for Thermal Problems

SP - 345

EP - 348

BT - First International conference on Computational Methods for Thermal Problems, ThermaComp2009

T2 - 1st International Conference on Computational Methods for Thermal Problems, 2009

Y2 - 8 September 2009 through 10 September 2009

ER -

Numerical analysis of the dynamic thermal behavior of RF bipolar transistors

Abstract

Publication series

Conference

Keywords

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