Numerical and experimental studies of the carbon etching in EUV-induced plasma

Dmitry Astakhov, W.J. Goedheer, Christopher James Lee, V.V. Ivanov, V.M. Krivtsun, O. Yakushev, K.N. Koshelev, D.V. Lopaev, Frederik Bijkerk

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Abstract

We have used a combination of numerical modeling and experiments to study carbon etching in the presence of a hydrogen plasma. We model the evolution of a low density EUV-induced plasma during and after the EUV pulse to obtain the energy resolved ion fluxes from the plasma to the surface. By relating the computed ion fluxes to the experimentally observed etching rate at various pressures and ion energies, we show that at low pressure and energy, carbon etching is due to chemical sputtering, while at high pressure and energy a reactive ion etching process is likely to dominate.
Original languageEnglish
Pages-
Number of pages11
Volume1507.02705
Publication statusPublished - 2016

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Keywords

  • METIS-320114
  • IR-102791

Cite this

Astakhov, D., Goedheer, W. J., Lee, C. J., Ivanov, V. V., Krivtsun, V. M., Yakushev, O., ... Bijkerk, F. (2016). Numerical and experimental studies of the carbon etching in EUV-induced plasma. (pp. -).