Observation of a two dimensional hole gas in a GaInP/GaAs heterojunction

P. W.H. Pinkse*, D. K. Maude, J. C. Portal, M. A. di Forte-Poisson, C. Brylinski

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

The observation of a two dimensional holes gas (2-DHG) in a Ga0.5In0.5P/GaAs heterojunction is reported. Due to the low Hall mobility of 1130 cm2V-1s-1 only one subband is observed rather than the expected two subbands due to the lifting of Kramers degeneracy in a p-type heterojunction.

Original languageEnglish
Pages (from-to)127-129
Number of pages3
JournalSolid state communications
Volume87
Issue number2
DOIs
Publication statusPublished - Jul 1993
Externally publishedYes

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