Observation of spin diffusion, drift and precession in bulk n-GaAs using a spatially resolved steady-state technique

M. Beck*, C. Metzner, S. Malzer, G. H. Döhler

*Corresponding author for this work

Research output: Contribution to journalConference articleAcademicpeer-review

1 Citation (Scopus)

Abstract

We report on the spin transport of photoexcited spin polarized electrons in n-type GaAs under steady state conditions. Spin-diffusion, -drift and -relaxation are measured via spatially resolved Faraday rotation. If strain is applied to the sample, spin precession is observed for strain is along [110], due to the k-linear spin splitting induced by the off-diagonal strain components. No significant effect is seen for strain along [100]. From the results, we obtain a spin splitting constant of C3 = 7.6 eVÅ. We believe that the described method for the determination of this constant is more direct than previously reported approaches. Spin transport is described theoretically in a drift-diffusion model taking into account the D'yakonov-Perel' and Elliot-Yafet spin relaxation mechanisms and the heating of the electron gas.

Original languageEnglish
Pages (from-to)1385-1386
Number of pages2
JournalAIP conference proceedings
Volume772
DOIs
Publication statusPublished - 30 Jun 2005
Externally publishedYes
Event27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, United States
Duration: 26 Jul 200430 Jul 2004
Conference number: 27

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