Observation of spin diffusion, drift and precession in bulk n-GaAs using a spatially resolved steady-state technique

M. Beck; C. Metzner; S. Malzer; G. H. Döhler

doi:10.1063/1.1994630

Observation of spin diffusion, drift and precession in bulk n-GaAs using a spatially resolved steady-state technique

M. Beck^*
, C. Metzner
, S. Malzer
, G. H. Döhler

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › Academic › peer-review

1 Citation (Scopus)

Abstract

We report on the spin transport of photoexcited spin polarized electrons in n-type GaAs under steady state conditions. Spin-diffusion, -drift and -relaxation are measured via spatially resolved Faraday rotation. If strain is applied to the sample, spin precession is observed for strain is along [110], due to the k-linear spin splitting induced by the off-diagonal strain components. No significant effect is seen for strain along [100]. From the results, we obtain a spin splitting constant of C₃ = 7.6 eVÅ. We believe that the described method for the determination of this constant is more direct than previously reported approaches. Spin transport is described theoretically in a drift-diffusion model taking into account the D'yakonov-Perel' and Elliot-Yafet spin relaxation mechanisms and the heating of the electron gas.

Original language	English
Pages (from-to)	1385-1386
Number of pages	2
Journal	AIP conference proceedings
Volume	772
DOIs	https://doi.org/10.1063/1.1994630
Publication status	Published - 30 Jun 2005
Externally published	Yes
Event	27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, United States Duration: 26 Jul 2004 → 30 Jul 2004 Conference number: 27

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@article{026333f9fda44545a4ac76585757574a,

title = "Observation of spin diffusion, drift and precession in bulk n-GaAs using a spatially resolved steady-state technique",

abstract = "We report on the spin transport of photoexcited spin polarized electrons in n-type GaAs under steady state conditions. Spin-diffusion, -drift and -relaxation are measured via spatially resolved Faraday rotation. If strain is applied to the sample, spin precession is observed for strain is along [110], due to the k-linear spin splitting induced by the off-diagonal strain components. No significant effect is seen for strain along [100]. From the results, we obtain a spin splitting constant of C3 = 7.6 eV{\AA}. We believe that the described method for the determination of this constant is more direct than previously reported approaches. Spin transport is described theoretically in a drift-diffusion model taking into account the D'yakonov-Perel' and Elliot-Yafet spin relaxation mechanisms and the heating of the electron gas.",

author = "M. Beck and C. Metzner and S. Malzer and D{\"o}hler, \{G. H.\}",

year = "2005",

month = jun,

day = "30",

doi = "10.1063/1.1994630",

language = "English",

volume = "772",

pages = "1385--1386",

journal = "AIP conference proceedings",

issn = "0094-243X",

publisher = "American Institute of Physics",

note = "27th International Conference on the Physics of Semiconductors, ICPS-27, ICPS ; Conference date: 26-07-2004 Through 30-07-2004",

}

TY - JOUR

T1 - Observation of spin diffusion, drift and precession in bulk n-GaAs using a spatially resolved steady-state technique

AU - Beck, M.

AU - Metzner, C.

AU - Malzer, S.

AU - Döhler, G. H.

N1 - Conference code: 27

PY - 2005/6/30

Y1 - 2005/6/30

N2 - We report on the spin transport of photoexcited spin polarized electrons in n-type GaAs under steady state conditions. Spin-diffusion, -drift and -relaxation are measured via spatially resolved Faraday rotation. If strain is applied to the sample, spin precession is observed for strain is along [110], due to the k-linear spin splitting induced by the off-diagonal strain components. No significant effect is seen for strain along [100]. From the results, we obtain a spin splitting constant of C3 = 7.6 eVÅ. We believe that the described method for the determination of this constant is more direct than previously reported approaches. Spin transport is described theoretically in a drift-diffusion model taking into account the D'yakonov-Perel' and Elliot-Yafet spin relaxation mechanisms and the heating of the electron gas.

AB - We report on the spin transport of photoexcited spin polarized electrons in n-type GaAs under steady state conditions. Spin-diffusion, -drift and -relaxation are measured via spatially resolved Faraday rotation. If strain is applied to the sample, spin precession is observed for strain is along [110], due to the k-linear spin splitting induced by the off-diagonal strain components. No significant effect is seen for strain along [100]. From the results, we obtain a spin splitting constant of C3 = 7.6 eVÅ. We believe that the described method for the determination of this constant is more direct than previously reported approaches. Spin transport is described theoretically in a drift-diffusion model taking into account the D'yakonov-Perel' and Elliot-Yafet spin relaxation mechanisms and the heating of the electron gas.

UR - https://www.scopus.com/pages/publications/33749498251

U2 - 10.1063/1.1994630

DO - 10.1063/1.1994630

M3 - Conference article

AN - SCOPUS:33749498251

SN - 0094-243X

VL - 772

SP - 1385

EP - 1386

JO - AIP conference proceedings

JF - AIP conference proceedings

T2 - 27th International Conference on the Physics of Semiconductors, ICPS-27

Y2 - 26 July 2004 through 30 July 2004

ER -

Observation of spin diffusion, drift and precession in bulk n-GaAs using a spatially resolved steady-state technique

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