Observations on the recovery of hot carrier degradation of hydrogen/deuterium passivated nMOSFETs

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    Abstract

    Degradation due to hot-carrier injection and the recovery due to annealing in air have been investigated in long channel nMOSFETs, where the passivation of the dangling bonds at the Si/SiO2 interface in the post metal anneal step is done with hydrogen or deuterium. The devices with deuterium passivation exhibit less degradation than the devices with hydrogen due to the well-known isotope effect. However, the recovery of hot-carrier induced degradation by thermal annealing in air is found to be independent of the isotope. An Arrhenius activation energy (Ea) of around 0.18 eV for threshold voltage (VT) recovery for both types of devices was calculated, indicating that the recovery mechanism may be the same.
    Original languageEnglish
    Pages (from-to)136-140
    Number of pages5
    JournalMicroelectronics reliability
    Volume76-77
    Early online date18 Jul 2017
    DOIs
    Publication statusPublished - Sep 2017

    Keywords

    • hot carrier degradation
    • Recovery
    • Annealing
    • Isotope effect

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