Observations on the recovery of hot carrier degradation of hydrogen/deuterium passivated nMOSFETs

Maurits J. de Jong; Cora  Salm; Jurriaan  Schmitz

doi:10.1016/j.microrel.2017.07.038

Observations on the recovery of hot carrier degradation of hydrogen/deuterium passivated nMOSFETs

Maurits J. de Jong, Cora Salm, Jurriaan Schmitz

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Abstract

Degradation due to hot-carrier injection and the recovery due to annealing in air have been investigated in long channel nMOSFETs, where the passivation of the dangling bonds at the Si/SiO2 interface in the post metal anneal step is done with hydrogen or deuterium. The devices with deuterium passivation exhibit less degradation than the devices with hydrogen due to the well-known isotope effect. However, the recovery of hot-carrier induced degradation by thermal annealing in air is found to be independent of the isotope. An Arrhenius activation energy (Ea) of around 0.18 eV for threshold voltage (VT) recovery for both types of devices was calculated, indicating that the recovery mechanism may be the same.

Original language	English
Pages (from-to)	136-140
Number of pages	5
Journal	Microelectronics reliability
Volume	76-77
Early online date	18 Jul 2017
DOIs	https://doi.org/10.1016/j.microrel.2017.07.038
Publication status	Published - Sept 2017

Keywords

Hot carrier degradation
Recovery
Annealing
Isotope effect
2023 OA procedure

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10.1016/j.microrel.2017.07.038

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title = "Observations on the recovery of hot carrier degradation of hydrogen/deuterium passivated nMOSFETs",

abstract = "Degradation due to hot-carrier injection and the recovery due to annealing in air have been investigated in long channel nMOSFETs, where the passivation of the dangling bonds at the Si/SiO2 interface in the post metal anneal step is done with hydrogen or deuterium. The devices with deuterium passivation exhibit less degradation than the devices with hydrogen due to the well-known isotope effect. However, the recovery of hot-carrier induced degradation by thermal annealing in air is found to be independent of the isotope. An Arrhenius activation energy (Ea) of around 0.18 eV for threshold voltage (VT) recovery for both types of devices was calculated, indicating that the recovery mechanism may be the same.",

keywords = "Hot carrier degradation, Recovery, Annealing, Isotope effect, 2023 OA procedure",

author = "{de Jong}, {Maurits J.} and Cora Salm and Jurriaan Schmitz",

year = "2017",

month = sep,

doi = "10.1016/j.microrel.2017.07.038",

language = "English",

volume = "76-77",

pages = "136--140",

journal = "Microelectronics reliability",

issn = "0026-2714",

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TY - JOUR

T1 - Observations on the recovery of hot carrier degradation of hydrogen/deuterium passivated nMOSFETs

AU - de Jong, Maurits J.

AU - Salm, Cora

AU - Schmitz, Jurriaan

PY - 2017/9

Y1 - 2017/9

N2 - Degradation due to hot-carrier injection and the recovery due to annealing in air have been investigated in long channel nMOSFETs, where the passivation of the dangling bonds at the Si/SiO2 interface in the post metal anneal step is done with hydrogen or deuterium. The devices with deuterium passivation exhibit less degradation than the devices with hydrogen due to the well-known isotope effect. However, the recovery of hot-carrier induced degradation by thermal annealing in air is found to be independent of the isotope. An Arrhenius activation energy (Ea) of around 0.18 eV for threshold voltage (VT) recovery for both types of devices was calculated, indicating that the recovery mechanism may be the same.

AB - Degradation due to hot-carrier injection and the recovery due to annealing in air have been investigated in long channel nMOSFETs, where the passivation of the dangling bonds at the Si/SiO2 interface in the post metal anneal step is done with hydrogen or deuterium. The devices with deuterium passivation exhibit less degradation than the devices with hydrogen due to the well-known isotope effect. However, the recovery of hot-carrier induced degradation by thermal annealing in air is found to be independent of the isotope. An Arrhenius activation energy (Ea) of around 0.18 eV for threshold voltage (VT) recovery for both types of devices was calculated, indicating that the recovery mechanism may be the same.

KW - Hot carrier degradation

KW - Recovery

KW - Annealing

KW - Isotope effect

KW - 2023 OA procedure

U2 - 10.1016/j.microrel.2017.07.038

DO - 10.1016/j.microrel.2017.07.038

M3 - Article

SN - 0026-2714

VL - 76-77

SP - 136

EP - 140

JO - Microelectronics reliability

JF - Microelectronics reliability

ER -

Observations on the recovery of hot carrier degradation of hydrogen/deuterium passivated nMOSFETs

Abstract

Keywords

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