Observations on the recovery of hot carrier degradation of hydrogen/deuterium passivated nMOSFETs

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    Abstract

    Degradation due to hot-carrier injection and the recovery due to annealing in air have been investigated in long channel nMOSFETs, where the passivation of the dangling bonds at the Si/SiO2 interface in the post metal anneal step is done with hydrogen or deuterium. The devices with deuterium passivation exhibit less degradation than the devices with hydrogen due to the well-known isotope effect. However, the recovery of hot-carrier induced degradation by thermal annealing in air is found to be independent of the isotope. An Arrhenius activation energy (Ea) of around 0.18 eV for threshold voltage (VT) recovery for both types of devices was calculated, indicating that the recovery mechanism may be the same.
    Original languageEnglish
    Pages (from-to)136-140
    Number of pages5
    JournalMicroelectronics reliability
    Volume76-77
    Early online date18 Jul 2017
    DOIs
    Publication statusPublished - Sep 2017

    Fingerprint

    Hot carriers
    Deuterium
    deuterium
    Hydrogen
    recovery
    degradation
    Recovery
    Degradation
    hydrogen
    Passivation
    Isotopes
    passivity
    Annealing
    annealing
    Dangling bonds
    carrier injection
    air
    Air
    Threshold voltage
    threshold voltage

    Keywords

    • hot carrier degradation
    • Recovery
    • Annealing
    • Isotope effect

    Cite this

    @article{c41c8d57fa9843a0bcefa3c60c915d06,
    title = "Observations on the recovery of hot carrier degradation of hydrogen/deuterium passivated nMOSFETs",
    abstract = "Degradation due to hot-carrier injection and the recovery due to annealing in air have been investigated in long channel nMOSFETs, where the passivation of the dangling bonds at the Si/SiO2 interface in the post metal anneal step is done with hydrogen or deuterium. The devices with deuterium passivation exhibit less degradation than the devices with hydrogen due to the well-known isotope effect. However, the recovery of hot-carrier induced degradation by thermal annealing in air is found to be independent of the isotope. An Arrhenius activation energy (Ea) of around 0.18 eV for threshold voltage (VT) recovery for both types of devices was calculated, indicating that the recovery mechanism may be the same.",
    keywords = "hot carrier degradation, Recovery, Annealing, Isotope effect",
    author = "{de Jong}, {Maurits Jelke} and Cora Salm and Jurriaan Schmitz",
    year = "2017",
    month = "9",
    doi = "10.1016/j.microrel.2017.07.038",
    language = "English",
    volume = "76-77",
    pages = "136--140",
    journal = "Microelectronics reliability",
    issn = "0026-2714",
    publisher = "Elsevier",

    }

    Observations on the recovery of hot carrier degradation of hydrogen/deuterium passivated nMOSFETs. / de Jong, Maurits Jelke; Salm, Cora ; Schmitz, Jurriaan .

    In: Microelectronics reliability, Vol. 76-77, 09.2017, p. 136-140.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Observations on the recovery of hot carrier degradation of hydrogen/deuterium passivated nMOSFETs

    AU - de Jong, Maurits Jelke

    AU - Salm, Cora

    AU - Schmitz, Jurriaan

    PY - 2017/9

    Y1 - 2017/9

    N2 - Degradation due to hot-carrier injection and the recovery due to annealing in air have been investigated in long channel nMOSFETs, where the passivation of the dangling bonds at the Si/SiO2 interface in the post metal anneal step is done with hydrogen or deuterium. The devices with deuterium passivation exhibit less degradation than the devices with hydrogen due to the well-known isotope effect. However, the recovery of hot-carrier induced degradation by thermal annealing in air is found to be independent of the isotope. An Arrhenius activation energy (Ea) of around 0.18 eV for threshold voltage (VT) recovery for both types of devices was calculated, indicating that the recovery mechanism may be the same.

    AB - Degradation due to hot-carrier injection and the recovery due to annealing in air have been investigated in long channel nMOSFETs, where the passivation of the dangling bonds at the Si/SiO2 interface in the post metal anneal step is done with hydrogen or deuterium. The devices with deuterium passivation exhibit less degradation than the devices with hydrogen due to the well-known isotope effect. However, the recovery of hot-carrier induced degradation by thermal annealing in air is found to be independent of the isotope. An Arrhenius activation energy (Ea) of around 0.18 eV for threshold voltage (VT) recovery for both types of devices was calculated, indicating that the recovery mechanism may be the same.

    KW - hot carrier degradation

    KW - Recovery

    KW - Annealing

    KW - Isotope effect

    U2 - 10.1016/j.microrel.2017.07.038

    DO - 10.1016/j.microrel.2017.07.038

    M3 - Article

    VL - 76-77

    SP - 136

    EP - 140

    JO - Microelectronics reliability

    JF - Microelectronics reliability

    SN - 0026-2714

    ER -