On-chip decoupling zone for package-stress reduction

V.L. Spiering; S. Bouwstra; R.M.E.J. Spiering; M. Elwenspoek

doi:10.1109/SENSOR.1991.149055

On-chip decoupling zone for package-stress reduction

V.L. Spiering, S. Bouwstra, R.M.E.J. Spiering, M. Elwenspoek

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

14 Citations (Scopus)

83 Downloads (Pure)

Abstract

The authors report the reduction of package stresses by introducing a decoupling zone directly around a sensor structure. Different geometries of the decoupling zones are compared, using the finite element method (FEM) and analytical models. Reduction factors over 1000 and higher can be realized by using an axisymmetrical V-corrugation. A design rule to optimize the reduction for the V-corrugation is given. This rule is based on analytical calculations and verified by FEM-simulations. Finally, it is shown that the thickness of a backplate, mounted to the sensor chip, can be optimized for minimal thermal stresses in the sensor.

Original language	English
Title of host publication	TRANSDUCERS '91
Subtitle of host publication	1991 International Conference on Solid-State Sensors and Actuators
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	982-985
Number of pages	4
ISBN (Print)	0-87942-585-7
DOIs	https://doi.org/10.1109/SENSOR.1991.149055
Publication status	Published - 24 Jun 1991
Event	1991 International Conference on Solid-State Sensors and Actuators, TRANSDUCERS 1991 - San Francisco, United States Duration: 24 Jun 1991 → 27 Jun 1991

Conference

Conference	1991 International Conference on Solid-State Sensors and Actuators, TRANSDUCERS 1991
Abbreviated title	TRANSDUCERS '91
Country/Territory	United States
City	San Francisco
Period	24/06/91 → 27/06/91

Access to Document

10.1109/SENSOR.1991.149055

Spiering1991on-chipFinal published version, 300 KB

Cite this

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title = "On-chip decoupling zone for package-stress reduction",

abstract = "The authors report the reduction of package stresses by introducing a decoupling zone directly around a sensor structure. Different geometries of the decoupling zones are compared, using the finite element method (FEM) and analytical models. Reduction factors over 1000 and higher can be realized by using an axisymmetrical V-corrugation. A design rule to optimize the reduction for the V-corrugation is given. This rule is based on analytical calculations and verified by FEM-simulations. Finally, it is shown that the thickness of a backplate, mounted to the sensor chip, can be optimized for minimal thermal stresses in the sensor.",

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booktitle = "TRANSDUCERS '91",

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note = "1991 International Conference on Solid-State Sensors and Actuators, TRANSDUCERS 1991, TRANSDUCERS '91 ; Conference date: 24-06-1991 Through 27-06-1991",

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Spiering, VL, Bouwstra, S, Spiering, RMEJ & Elwenspoek, M 1991, On-chip decoupling zone for package-stress reduction. in TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. IEEE, Piscataway, NJ, pp. 982-985, 1991 International Conference on Solid-State Sensors and Actuators, TRANSDUCERS 1991, San Francisco, California, United States, 24/06/91. https://doi.org/10.1109/SENSOR.1991.149055

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T1 - On-chip decoupling zone for package-stress reduction

AU - Spiering, V.L.

AU - Bouwstra, S.

AU - Spiering, R.M.E.J.

AU - Elwenspoek, M.

PY - 1991/6/24

Y1 - 1991/6/24

N2 - The authors report the reduction of package stresses by introducing a decoupling zone directly around a sensor structure. Different geometries of the decoupling zones are compared, using the finite element method (FEM) and analytical models. Reduction factors over 1000 and higher can be realized by using an axisymmetrical V-corrugation. A design rule to optimize the reduction for the V-corrugation is given. This rule is based on analytical calculations and verified by FEM-simulations. Finally, it is shown that the thickness of a backplate, mounted to the sensor chip, can be optimized for minimal thermal stresses in the sensor.

AB - The authors report the reduction of package stresses by introducing a decoupling zone directly around a sensor structure. Different geometries of the decoupling zones are compared, using the finite element method (FEM) and analytical models. Reduction factors over 1000 and higher can be realized by using an axisymmetrical V-corrugation. A design rule to optimize the reduction for the V-corrugation is given. This rule is based on analytical calculations and verified by FEM-simulations. Finally, it is shown that the thickness of a backplate, mounted to the sensor chip, can be optimized for minimal thermal stresses in the sensor.

U2 - 10.1109/SENSOR.1991.149055

DO - 10.1109/SENSOR.1991.149055

M3 - Conference contribution

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