Abstract
| Original language | Undefined |
|---|---|
| Title of host publication | Photonics West |
| Editors | Louay A. Eldada, El-Hang Lee |
| Place of Publication | Bellingham, WA, USA |
| Publisher | SPIE - The International Society for Optical Engineering |
| Pages | 76050M |
| Number of pages | 8 |
| ISBN (Print) | 9780819480019 |
| DOIs | |
| Publication status | Published - Feb 2010 |
Publication series
| Name | Proceedings of the SPIE |
|---|---|
| Publisher | SPIE, the international Society for Optical Engineering |
| Volume | 7605 |
| ISSN (Print) | 0277-786X |
Keywords
- IR-70511
- METIS-270762
- optical gain
- Waveguide laser
- Rare-earth-ion doping
- Erbium
- integrated ring laser
- Channel waveguide
- IOMS-APD: Active Photonic Devices
- EWI-17680
- EC Grant Agreement nr.: FP6/017501
- tunable laser
- Aluminum oxide
Cite this
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On-chip integrated lasers in Al2O3:Er on silicon. / Pollnau, Markus; Bradley, J.; Ay, F.; Bernhardi, Edward; de Ridder, R.M.; Worhoff, Kerstin.
Photonics West. ed. / Louay A. Eldada; El-Hang Lee. Bellingham, WA, USA : SPIE - The International Society for Optical Engineering, 2010. p. 76050M 10.1117/12.845842 (Proceedings of the SPIE; Vol. 7605).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review
TY - GEN
T1 - On-chip integrated lasers in Al2O3:Er on silicon
AU - Pollnau, Markus
AU - Bradley, J.
AU - Ay, F.
AU - Bernhardi, Edward
AU - de Ridder, R.M.
AU - Worhoff, Kerstin
N1 - eemcs-eprint-17680
PY - 2010/2
Y1 - 2010/2
N2 - Erbium-doped aluminum oxide channel waveguides were fabricated on silicon substrates and their characteristics were investigated for Er concentrations ranging from 0.27 to 4.2x10e20 cm-3. Background losses below 0.3 dB/cm at 1320 nm were measured. For optimum Er concentrations in the range of 1 to 2x10e20 cm-3, internal net gain was obtained over a wavelength range of 80 nm (1500-1580 nm) and a peak gain of 2.0 dB/cm was measured at 1533 nm. Integrated Al2O3:Er3+ channel waveguide ring lasers were realized based on such waveguides. Output powers of up to 9.5 µW and slope efficiencies of up to 0.11 % were measured. Lasing was observed for a threshold diode-pump power as low as 6.4 mW. Wavelength selection in the range 1530 to 1557 nm was demonstrated by varying the length of the output coupler from the ring.
AB - Erbium-doped aluminum oxide channel waveguides were fabricated on silicon substrates and their characteristics were investigated for Er concentrations ranging from 0.27 to 4.2x10e20 cm-3. Background losses below 0.3 dB/cm at 1320 nm were measured. For optimum Er concentrations in the range of 1 to 2x10e20 cm-3, internal net gain was obtained over a wavelength range of 80 nm (1500-1580 nm) and a peak gain of 2.0 dB/cm was measured at 1533 nm. Integrated Al2O3:Er3+ channel waveguide ring lasers were realized based on such waveguides. Output powers of up to 9.5 µW and slope efficiencies of up to 0.11 % were measured. Lasing was observed for a threshold diode-pump power as low as 6.4 mW. Wavelength selection in the range 1530 to 1557 nm was demonstrated by varying the length of the output coupler from the ring.
KW - IR-70511
KW - METIS-270762
KW - optical gain
KW - Waveguide laser
KW - Rare-earth-ion doping
KW - Erbium
KW - integrated ring laser
KW - Channel waveguide
KW - IOMS-APD: Active Photonic Devices
KW - EWI-17680
KW - EC Grant Agreement nr.: FP6/017501
KW - tunable laser
KW - Aluminum oxide
U2 - 10.1117/12.845842
DO - 10.1117/12.845842
M3 - Conference contribution
SN - 9780819480019
T3 - Proceedings of the SPIE
SP - 76050M
BT - Photonics West
A2 - Eldada, Louay A.
A2 - Lee, El-Hang
PB - SPIE - The International Society for Optical Engineering
CY - Bellingham, WA, USA
ER -