On-chip integrated lasers in Al2O3:Er on silicon

Markus Pollnau; J. Bradley; F. Ay; Edward Bernhardi; R.M. de Ridder; Kerstin Worhoff

doi:10.1117/12.845842

On-chip integrated lasers in Al₂O₃:Er on silicon

Markus Pollnau, J. Bradley, F. Ay, Edward Bernhardi, R.M. de Ridder, Kerstin Worhoff

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

53 Downloads (Pure)

Abstract

Erbium-doped aluminum oxide channel waveguides were fabricated on silicon substrates and their characteristics were investigated for Er concentrations ranging from 0.27 to 4.2x10e20 cm-3. Background losses below 0.3 dB/cm at 1320 nm were measured. For optimum Er concentrations in the range of 1 to 2x10e20 cm-3, internal net gain was obtained over a wavelength range of 80 nm (1500-1580 nm) and a peak gain of 2.0 dB/cm was measured at 1533 nm. Integrated Al2O3:Er3+ channel waveguide ring lasers were realized based on such waveguides. Output powers of up to 9.5 µW and slope efficiencies of up to 0.11 % were measured. Lasing was observed for a threshold diode-pump power as low as 6.4 mW. Wavelength selection in the range 1530 to 1557 nm was demonstrated by varying the length of the output coupler from the ring.

Original language	Undefined
Title of host publication	Photonics West
Editors	Louay A. Eldada, El-Hang Lee
Place of Publication	Bellingham, WA, USA
Publisher	SPIE - The International Society for Optical Engineering
Pages	76050M
Number of pages	8
ISBN (Print)	9780819480019
DOIs	https://doi.org/10.1117/12.845842
Publication status	Published - Feb 2010
Event	Optoelectronic Integrated Circuits XII - San Francisco, CA, USA Duration: 23 Jan 2010 → 28 Jan 2010

Publication series

Name	Proceedings of the SPIE
Publisher	SPIE, the international Society for Optical Engineering
Volume	7605
ISSN (Print)	0277-786X

Conference

Conference	Optoelectronic Integrated Circuits XII
Period	23/01/10 → 28/01/10
Other	23-28 January 2010

Keywords

IR-70511
METIS-270762
optical gain
Waveguide laser
Rare-earth-ion doping
Erbium
integrated ring laser
Channel waveguide
IOMS-APD: Active Photonic Devices
EWI-17680
EC Grant Agreement nr.: FP6/017501
tunable laser
Aluminum oxide

Access to Document

10.1117/12.845842

Pollnau_PhotonicsWest_2010_Proceedings

Cite this

@inproceedings{3cc04ff3e589474e9ba6446ed8d6b1a5,

title = "On-chip integrated lasers in Al2O3:Er on silicon",

abstract = "Erbium-doped aluminum oxide channel waveguides were fabricated on silicon substrates and their characteristics were investigated for Er concentrations ranging from 0.27 to 4.2x10e20 cm-3. Background losses below 0.3 dB/cm at 1320 nm were measured. For optimum Er concentrations in the range of 1 to 2x10e20 cm-3, internal net gain was obtained over a wavelength range of 80 nm (1500-1580 nm) and a peak gain of 2.0 dB/cm was measured at 1533 nm. Integrated Al2O3:Er3+ channel waveguide ring lasers were realized based on such waveguides. Output powers of up to 9.5 µW and slope efficiencies of up to 0.11 % were measured. Lasing was observed for a threshold diode-pump power as low as 6.4 mW. Wavelength selection in the range 1530 to 1557 nm was demonstrated by varying the length of the output coupler from the ring.",

keywords = "IR-70511, METIS-270762, optical gain, Waveguide laser, Rare-earth-ion doping, Erbium, integrated ring laser, Channel waveguide, IOMS-APD: Active Photonic Devices, EWI-17680, EC Grant Agreement nr.: FP6/017501, tunable laser, Aluminum oxide",

author = "Markus Pollnau and J. Bradley and F. Ay and Edward Bernhardi and {de Ridder}, R.M. and Kerstin Worhoff",

note = "eemcs-eprint-17680 ; null ; Conference date: 23-01-2010 Through 28-01-2010",

year = "2010",

month = feb,

doi = "10.1117/12.845842",

language = "Undefined",

isbn = "9780819480019",

series = "Proceedings of the SPIE",

publisher = "SPIE - The International Society for Optical Engineering",

pages = "76050M",

editor = "Eldada, {Louay A.} and El-Hang Lee",

booktitle = "Photonics West",

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Pollnau, M, Bradley, J, Ay, F, Bernhardi, E, de Ridder, RM & Worhoff, K 2010, On-chip integrated lasers in Al₂O₃:Er on silicon. in LA Eldada & E-H Lee (eds), Photonics West., 10.1117/12.845842, Proceedings of the SPIE, vol. 7605, SPIE - The International Society for Optical Engineering, Bellingham, WA, USA, pp. 76050M, Optoelectronic Integrated Circuits XII, 23/01/10. https://doi.org/10.1117/12.845842

On-chip integrated lasers in Al₂O₃:Er on silicon. / Pollnau, Markus; Bradley, J.; Ay, F.; Bernhardi, Edward; de Ridder, R.M.; Worhoff, Kerstin.

Photonics West. ed. / Louay A. Eldada; El-Hang Lee. Bellingham, WA, USA : SPIE - The International Society for Optical Engineering, 2010. p. 76050M 10.1117/12.845842 (Proceedings of the SPIE; Vol. 7605).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - On-chip integrated lasers in Al2O3:Er on silicon

AU - Pollnau, Markus

AU - Bradley, J.

AU - Ay, F.

AU - Bernhardi, Edward

AU - de Ridder, R.M.

AU - Worhoff, Kerstin

N1 - eemcs-eprint-17680

PY - 2010/2

Y1 - 2010/2

N2 - Erbium-doped aluminum oxide channel waveguides were fabricated on silicon substrates and their characteristics were investigated for Er concentrations ranging from 0.27 to 4.2x10e20 cm-3. Background losses below 0.3 dB/cm at 1320 nm were measured. For optimum Er concentrations in the range of 1 to 2x10e20 cm-3, internal net gain was obtained over a wavelength range of 80 nm (1500-1580 nm) and a peak gain of 2.0 dB/cm was measured at 1533 nm. Integrated Al2O3:Er3+ channel waveguide ring lasers were realized based on such waveguides. Output powers of up to 9.5 µW and slope efficiencies of up to 0.11 % were measured. Lasing was observed for a threshold diode-pump power as low as 6.4 mW. Wavelength selection in the range 1530 to 1557 nm was demonstrated by varying the length of the output coupler from the ring.

AB - Erbium-doped aluminum oxide channel waveguides were fabricated on silicon substrates and their characteristics were investigated for Er concentrations ranging from 0.27 to 4.2x10e20 cm-3. Background losses below 0.3 dB/cm at 1320 nm were measured. For optimum Er concentrations in the range of 1 to 2x10e20 cm-3, internal net gain was obtained over a wavelength range of 80 nm (1500-1580 nm) and a peak gain of 2.0 dB/cm was measured at 1533 nm. Integrated Al2O3:Er3+ channel waveguide ring lasers were realized based on such waveguides. Output powers of up to 9.5 µW and slope efficiencies of up to 0.11 % were measured. Lasing was observed for a threshold diode-pump power as low as 6.4 mW. Wavelength selection in the range 1530 to 1557 nm was demonstrated by varying the length of the output coupler from the ring.

KW - IR-70511

KW - METIS-270762

KW - optical gain

KW - Waveguide laser

KW - Rare-earth-ion doping

KW - Erbium

KW - integrated ring laser

KW - Channel waveguide

KW - IOMS-APD: Active Photonic Devices

KW - EWI-17680

KW - EC Grant Agreement nr.: FP6/017501

KW - tunable laser

KW - Aluminum oxide

U2 - 10.1117/12.845842

DO - 10.1117/12.845842

M3 - Conference contribution

SN - 9780819480019

T3 - Proceedings of the SPIE

SP - 76050M

BT - Photonics West

A2 - Eldada, Louay A.

A2 - Lee, El-Hang

PB - SPIE - The International Society for Optical Engineering

CY - Bellingham, WA, USA

Y2 - 23 January 2010 through 28 January 2010

ER -