On-chip integrated lasers in Al2O3:Er on silicon

Markus Pollnau, J. Bradley, F. Ay, Edward Bernhardi, R.M. de Ridder, Kerstin Worhoff

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)
31 Downloads (Pure)

Abstract

Erbium-doped aluminum oxide channel waveguides were fabricated on silicon substrates and their characteristics were investigated for Er concentrations ranging from 0.27 to 4.2x10e20 cm-3. Background losses below 0.3 dB/cm at 1320 nm were measured. For optimum Er concentrations in the range of 1 to 2x10e20 cm-3, internal net gain was obtained over a wavelength range of 80 nm (1500-1580 nm) and a peak gain of 2.0 dB/cm was measured at 1533 nm. Integrated Al2O3:Er3+ channel waveguide ring lasers were realized based on such waveguides. Output powers of up to 9.5 µW and slope efficiencies of up to 0.11 % were measured. Lasing was observed for a threshold diode-pump power as low as 6.4 mW. Wavelength selection in the range 1530 to 1557 nm was demonstrated by varying the length of the output coupler from the ring.
Original languageUndefined
Title of host publicationPhotonics West
EditorsLouay A. Eldada, El-Hang Lee
Place of PublicationBellingham, WA, USA
PublisherSPIE - The International Society for Optical Engineering
Pages76050M
Number of pages8
ISBN (Print)9780819480019
DOIs
Publication statusPublished - Feb 2010

Publication series

NameProceedings of the SPIE
PublisherSPIE, the international Society for Optical Engineering
Volume7605
ISSN (Print)0277-786X

Keywords

  • IR-70511
  • METIS-270762
  • optical gain
  • Waveguide laser
  • Rare-earth-ion doping
  • Erbium
  • integrated ring laser
  • Channel waveguide
  • IOMS-APD: Active Photonic Devices
  • EWI-17680
  • EC Grant Agreement nr.: FP6/017501
  • tunable laser
  • Aluminum oxide

Cite this

Pollnau, M., Bradley, J., Ay, F., Bernhardi, E., de Ridder, R. M., & Worhoff, K. (2010). On-chip integrated lasers in Al2O3:Er on silicon. In L. A. Eldada, & E-H. Lee (Eds.), Photonics West (pp. 76050M). [10.1117/12.845842] (Proceedings of the SPIE; Vol. 7605). Bellingham, WA, USA: SPIE - The International Society for Optical Engineering. https://doi.org/10.1117/12.845842
Pollnau, Markus ; Bradley, J. ; Ay, F. ; Bernhardi, Edward ; de Ridder, R.M. ; Worhoff, Kerstin. / On-chip integrated lasers in Al2O3:Er on silicon. Photonics West. editor / Louay A. Eldada ; El-Hang Lee. Bellingham, WA, USA : SPIE - The International Society for Optical Engineering, 2010. pp. 76050M (Proceedings of the SPIE).
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title = "On-chip integrated lasers in Al2O3:Er on silicon",
abstract = "Erbium-doped aluminum oxide channel waveguides were fabricated on silicon substrates and their characteristics were investigated for Er concentrations ranging from 0.27 to 4.2x10e20 cm-3. Background losses below 0.3 dB/cm at 1320 nm were measured. For optimum Er concentrations in the range of 1 to 2x10e20 cm-3, internal net gain was obtained over a wavelength range of 80 nm (1500-1580 nm) and a peak gain of 2.0 dB/cm was measured at 1533 nm. Integrated Al2O3:Er3+ channel waveguide ring lasers were realized based on such waveguides. Output powers of up to 9.5 µW and slope efficiencies of up to 0.11 {\%} were measured. Lasing was observed for a threshold diode-pump power as low as 6.4 mW. Wavelength selection in the range 1530 to 1557 nm was demonstrated by varying the length of the output coupler from the ring.",
keywords = "IR-70511, METIS-270762, optical gain, Waveguide laser, Rare-earth-ion doping, Erbium, integrated ring laser, Channel waveguide, IOMS-APD: Active Photonic Devices, EWI-17680, EC Grant Agreement nr.: FP6/017501, tunable laser, Aluminum oxide",
author = "Markus Pollnau and J. Bradley and F. Ay and Edward Bernhardi and {de Ridder}, R.M. and Kerstin Worhoff",
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doi = "10.1117/12.845842",
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Pollnau, M, Bradley, J, Ay, F, Bernhardi, E, de Ridder, RM & Worhoff, K 2010, On-chip integrated lasers in Al2O3:Er on silicon. in LA Eldada & E-H Lee (eds), Photonics West., 10.1117/12.845842, Proceedings of the SPIE, vol. 7605, SPIE - The International Society for Optical Engineering, Bellingham, WA, USA, pp. 76050M. https://doi.org/10.1117/12.845842

On-chip integrated lasers in Al2O3:Er on silicon. / Pollnau, Markus; Bradley, J.; Ay, F.; Bernhardi, Edward; de Ridder, R.M.; Worhoff, Kerstin.

Photonics West. ed. / Louay A. Eldada; El-Hang Lee. Bellingham, WA, USA : SPIE - The International Society for Optical Engineering, 2010. p. 76050M 10.1117/12.845842 (Proceedings of the SPIE; Vol. 7605).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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T1 - On-chip integrated lasers in Al2O3:Er on silicon

AU - Pollnau, Markus

AU - Bradley, J.

AU - Ay, F.

AU - Bernhardi, Edward

AU - de Ridder, R.M.

AU - Worhoff, Kerstin

N1 - eemcs-eprint-17680

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N2 - Erbium-doped aluminum oxide channel waveguides were fabricated on silicon substrates and their characteristics were investigated for Er concentrations ranging from 0.27 to 4.2x10e20 cm-3. Background losses below 0.3 dB/cm at 1320 nm were measured. For optimum Er concentrations in the range of 1 to 2x10e20 cm-3, internal net gain was obtained over a wavelength range of 80 nm (1500-1580 nm) and a peak gain of 2.0 dB/cm was measured at 1533 nm. Integrated Al2O3:Er3+ channel waveguide ring lasers were realized based on such waveguides. Output powers of up to 9.5 µW and slope efficiencies of up to 0.11 % were measured. Lasing was observed for a threshold diode-pump power as low as 6.4 mW. Wavelength selection in the range 1530 to 1557 nm was demonstrated by varying the length of the output coupler from the ring.

AB - Erbium-doped aluminum oxide channel waveguides were fabricated on silicon substrates and their characteristics were investigated for Er concentrations ranging from 0.27 to 4.2x10e20 cm-3. Background losses below 0.3 dB/cm at 1320 nm were measured. For optimum Er concentrations in the range of 1 to 2x10e20 cm-3, internal net gain was obtained over a wavelength range of 80 nm (1500-1580 nm) and a peak gain of 2.0 dB/cm was measured at 1533 nm. Integrated Al2O3:Er3+ channel waveguide ring lasers were realized based on such waveguides. Output powers of up to 9.5 µW and slope efficiencies of up to 0.11 % were measured. Lasing was observed for a threshold diode-pump power as low as 6.4 mW. Wavelength selection in the range 1530 to 1557 nm was demonstrated by varying the length of the output coupler from the ring.

KW - IR-70511

KW - METIS-270762

KW - optical gain

KW - Waveguide laser

KW - Rare-earth-ion doping

KW - Erbium

KW - integrated ring laser

KW - Channel waveguide

KW - IOMS-APD: Active Photonic Devices

KW - EWI-17680

KW - EC Grant Agreement nr.: FP6/017501

KW - tunable laser

KW - Aluminum oxide

U2 - 10.1117/12.845842

DO - 10.1117/12.845842

M3 - Conference contribution

SN - 9780819480019

T3 - Proceedings of the SPIE

SP - 76050M

BT - Photonics West

A2 - Eldada, Louay A.

A2 - Lee, El-Hang

PB - SPIE - The International Society for Optical Engineering

CY - Bellingham, WA, USA

ER -

Pollnau M, Bradley J, Ay F, Bernhardi E, de Ridder RM, Worhoff K. On-chip integrated lasers in Al2O3:Er on silicon. In Eldada LA, Lee E-H, editors, Photonics West. Bellingham, WA, USA: SPIE - The International Society for Optical Engineering. 2010. p. 76050M. 10.1117/12.845842. (Proceedings of the SPIE). https://doi.org/10.1117/12.845842