On-chip integrated lasers in Al2O3:Er on silicon

Markus Pollnau, J. Bradley, F. Ay, Edward Bernhardi, R.M. de Ridder, Kerstin Worhoff

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    3 Citations (Scopus)
    83 Downloads (Pure)


    Erbium-doped aluminum oxide channel waveguides were fabricated on silicon substrates and their characteristics were investigated for Er concentrations ranging from 0.27 to 4.2x10e20 cm-3. Background losses below 0.3 dB/cm at 1320 nm were measured. For optimum Er concentrations in the range of 1 to 2x10e20 cm-3, internal net gain was obtained over a wavelength range of 80 nm (1500-1580 nm) and a peak gain of 2.0 dB/cm was measured at 1533 nm. Integrated Al2O3:Er3+ channel waveguide ring lasers were realized based on such waveguides. Output powers of up to 9.5 µW and slope efficiencies of up to 0.11 % were measured. Lasing was observed for a threshold diode-pump power as low as 6.4 mW. Wavelength selection in the range 1530 to 1557 nm was demonstrated by varying the length of the output coupler from the ring.
    Original languageEnglish
    Title of host publicationPhotonics West
    EditorsLouay A. Eldada, El-Hang Lee
    Place of PublicationBellingham, WA, USA
    Number of pages8
    ISBN (Print)9780819480019
    Publication statusPublished - Feb 2010
    EventOptoelectronic Integrated Circuits XII - San Francisco, CA, USA
    Duration: 23 Jan 201028 Jan 2010

    Publication series

    NameProceedings of the SPIE
    PublisherSPIE, the international Society for Optical Engineering
    ISSN (Print)0277-786X


    ConferenceOptoelectronic Integrated Circuits XII
    Other23-28 January 2010


    • Optical gain
    • Waveguide laser
    • Rare-earth-ion doping
    • Erbium
    • Integrated ring laser
    • Channel waveguide
    • IOMS-APD: Active Photonic Devices
    • EC Grant Agreement nr.: FP6/017501
    • Tunable laser
    • Aluminum oxide


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