On Gas-Phase Depletion During LPCVD of GeSi Films using GeH4/SiH4 and GeH4/Si2H6 Gas Sources

Alexeij Y. Kovalgin, J. Holleman

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Original languageEnglish
    Title of host publicationThin Film Transistor Technologies VI
    Subtitle of host publicationproceedings of the international symposium
    EditorsYue Kuo
    Place of PublicationPennington, NJ
    PublisherThe Electrochemical Society Inc.
    Pages216-223
    Number of pages8
    ISBN (Print)1-56677-385-7
    Publication statusPublished - 2003
    Event6th Symposium on Thin Film Transistor Technologies, TFTT 2002 - Salt Lake City, United States
    Duration: 21 Oct 200223 Oct 2002
    Conference number: 6

    Publication series

    NameProceedings
    PublisherElectrochemical Society
    Number2002-23

    Conference

    Conference6th Symposium on Thin Film Transistor Technologies, TFTT 2002
    Abbreviated titleTFTT
    CountryUnited States
    CitySalt Lake City
    Period21/10/0223/10/02

    Keywords

    • METIS-214308

    Cite this

    Kovalgin, A. Y., & Holleman, J. (2003). On Gas-Phase Depletion During LPCVD of GeSi Films using GeH4/SiH4 and GeH4/Si2H6 Gas Sources. In Y. Kuo (Ed.), Thin Film Transistor Technologies VI: proceedings of the international symposium (pp. 216-223). (Proceedings; No. 2002-23). Pennington, NJ: The Electrochemical Society Inc..