On optimal structure and geometry of high-speed integrated photodiodes in a standard CMOS technology

S. Radovanovic; Anne J. Annema; Bram Nauta

doi:10.1109/CLEOPR.2003.1274557

On optimal structure and geometry of high-speed integrated photodiodes in a standard CMOS technology

S. Radovanovic
, Anne J. Annema
, Bram Nauta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Analyses of the influence of different geometries (layouts) and structures of high-speed CMOS photodiodes on their intrinsic (physical) and electrical bandwidths are presented. Three photodiode structures are studied: nwell/p-substrate, p+/nwell/p-substrate and p+/nwell. According to the author's knowledge, this is a first time that the influence of various structures and geometries (layouts) of CMOS photodiodes on their bandwidth is analytically analysed.

Original language	English
Title of host publication	The 5th Pacific Rim conference on Lasers and Electro-optics,2003 (CLEO/Pacific Rim 2003)
Publisher	IEEE
Pages	87
Number of pages	1
ISBN (Print)	0780377664
DOIs	https://doi.org/10.1109/CLEOPR.2003.1274557
Publication status	Published - Dec 2003
Event	5th Pacific Rim Conference on Lasers and Electro-optics 2003 - Grand Hotel Taipei, Taipei, Taiwan Duration: 15 Dec 2003 → 19 Dec 2003 Conference number: 5

Conference

Conference	5th Pacific Rim Conference on Lasers and Electro-optics 2003
Abbreviated title	PACIFIC RIM 2004
Country/Territory	Taiwan
City	Taipei
Period	15/12/03 → 19/12/03

Keywords

METIS-213449
EWI-14440
IR-45871

Access to Document

10.1109/CLEOPR.2003.1274557

Cite this

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title = "On optimal structure and geometry of high-speed integrated photodiodes in a standard CMOS technology",

abstract = "Analyses of the influence of different geometries (layouts) and structures of high-speed CMOS photodiodes on their intrinsic (physical) and electrical bandwidths are presented. Three photodiode structures are studied: nwell/p-substrate, p+/nwell/p-substrate and p+/nwell. According to the author's knowledge, this is a first time that the influence of various structures and geometries (layouts) of CMOS photodiodes on their bandwidth is analytically analysed.",

keywords = "METIS-213449, EWI-14440, IR-45871",

author = "S. Radovanovic and Annema, \{Anne J.\} and Bram Nauta",

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doi = "10.1109/CLEOPR.2003.1274557",

language = "English",

isbn = "0780377664",

pages = "87",

booktitle = "The 5th Pacific Rim conference on Lasers and Electro-optics,2003 (CLEO/Pacific Rim 2003)",

publisher = "IEEE",

address = "United States",

note = "5th Pacific Rim Conference on Lasers and Electro-optics 2003, PACIFIC RIM 2004 ; Conference date: 15-12-2003 Through 19-12-2003",

}

Radovanovic, S, Annema, AJ & Nauta, B 2003, On optimal structure and geometry of high-speed integrated photodiodes in a standard CMOS technology. in The 5th Pacific Rim conference on Lasers and Electro-optics,2003 (CLEO/Pacific Rim 2003). IEEE, pp. 87, 5th Pacific Rim Conference on Lasers and Electro-optics 2003, Taipei, Taiwan, 15/12/03. https://doi.org/10.1109/CLEOPR.2003.1274557

On optimal structure and geometry of high-speed integrated photodiodes in a standard CMOS technology. / Radovanovic, S.; Annema, Anne J.; Nauta, Bram.
The 5th Pacific Rim conference on Lasers and Electro-optics,2003 (CLEO/Pacific Rim 2003). IEEE, 2003. p. 87.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - On optimal structure and geometry of high-speed integrated photodiodes in a standard CMOS technology

AU - Radovanovic, S.

AU - Annema, Anne J.

AU - Nauta, Bram

N1 - Conference code: 5

PY - 2003/12

Y1 - 2003/12

N2 - Analyses of the influence of different geometries (layouts) and structures of high-speed CMOS photodiodes on their intrinsic (physical) and electrical bandwidths are presented. Three photodiode structures are studied: nwell/p-substrate, p+/nwell/p-substrate and p+/nwell. According to the author's knowledge, this is a first time that the influence of various structures and geometries (layouts) of CMOS photodiodes on their bandwidth is analytically analysed.

AB - Analyses of the influence of different geometries (layouts) and structures of high-speed CMOS photodiodes on their intrinsic (physical) and electrical bandwidths are presented. Three photodiode structures are studied: nwell/p-substrate, p+/nwell/p-substrate and p+/nwell. According to the author's knowledge, this is a first time that the influence of various structures and geometries (layouts) of CMOS photodiodes on their bandwidth is analytically analysed.

KW - METIS-213449

KW - EWI-14440

KW - IR-45871

U2 - 10.1109/CLEOPR.2003.1274557

DO - 10.1109/CLEOPR.2003.1274557

M3 - Conference contribution

SN - 0780377664

SP - 87

BT - The 5th Pacific Rim conference on Lasers and Electro-optics,2003 (CLEO/Pacific Rim 2003)

PB - IEEE

T2 - 5th Pacific Rim Conference on Lasers and Electro-optics 2003

Y2 - 15 December 2003 through 19 December 2003

ER -

On optimal structure and geometry of high-speed integrated photodiodes in a standard CMOS technology

Abstract

Conference

Keywords

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