On Oxidation Kinetics and Electrical Quality of Gate Oxide Grown in H2O or D2O Ambient

A.J. Hof, Alexeij Y. Kovalgin, P.H. Woerlee, Jurriaan Schmitz

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Original languageUndefined
    Title of host publicationProceedings of Semiconductor Advances for Future Electronics SAFE 2003
    Pages743-747
    Number of pages5
    Publication statusPublished - 25 Nov 2003

    Keywords

    • METIS-213270

    Cite this

    Hof, A. J., Kovalgin, A. Y., Woerlee, P. H., & Schmitz, J. (2003). On Oxidation Kinetics and Electrical Quality of Gate Oxide Grown in H2O or D2O Ambient. In Proceedings of Semiconductor Advances for Future Electronics SAFE 2003 (pp. 743-747)