In recent literature, a controversy has arisen over the question whether deuterium improves the stability of the MOS gate dielectric. This work presents a wide range of growth rate data of H2O and D2O gate oxides in an ultra-diluted ambient. A considerable and constant difference in oxidation rate is found between the two species. Although literature suggests a correlation between growth rate and dielectric quality, the degradation measurements on MOS capacitors with 8.5 nm gate oxides grown at 950 °C at low partial pressure show only a very weak difference between the isotopes. It appears that the difference in oxidation rate does not affect the gate oxide quality, and high quality grown gate oxides do not appear to benefit from the deuterium isotope effect.
|Number of pages||5|
|Publication status||Published - 25 Nov 2003|
|Event||6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003 - Veldhoven, Netherlands|
Duration: 25 Nov 2003 → 26 Nov 2003
Conference number: 6
|Conference||6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003|
|Period||25/11/03 → 26/11/03|