On-State and Off-State Breakdown in GaInAs/InP Composite-Channel HEMT's with Variable GaInAs Channel Thickness

A. Neviani, R. Oesterholt, M. Matloubian, J.J. Brown, C. Canali, E. Zanoni, T.W. Liu, G. Meneghesso

Research output: Contribution to journalArticleAcademic

67 Citations (Scopus)
Original languageUndefined
Pages (from-to)2-9
Number of pages8
JournalIEEE transactions on electron devices
Volume1999
Issue number1
Publication statusPublished - 1999

Keywords

  • METIS-111642

Cite this

Neviani, A., Oesterholt, R., Matloubian, M., Brown, J. J., Canali, C., Zanoni, E., ... Meneghesso, G. (1999). On-State and Off-State Breakdown in GaInAs/InP Composite-Channel HEMT's with Variable GaInAs Channel Thickness. IEEE transactions on electron devices, 1999(1), 2-9.
Neviani, A. ; Oesterholt, R. ; Matloubian, M. ; Brown, J.J. ; Canali, C. ; Zanoni, E. ; Liu, T.W. ; Meneghesso, G. / On-State and Off-State Breakdown in GaInAs/InP Composite-Channel HEMT's with Variable GaInAs Channel Thickness. In: IEEE transactions on electron devices. 1999 ; Vol. 1999, No. 1. pp. 2-9.
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Neviani, A, Oesterholt, R, Matloubian, M, Brown, JJ, Canali, C, Zanoni, E, Liu, TW & Meneghesso, G 1999, 'On-State and Off-State Breakdown in GaInAs/InP Composite-Channel HEMT's with Variable GaInAs Channel Thickness' IEEE transactions on electron devices, vol. 1999, no. 1, pp. 2-9.

On-State and Off-State Breakdown in GaInAs/InP Composite-Channel HEMT's with Variable GaInAs Channel Thickness. / Neviani, A.; Oesterholt, R.; Matloubian, M.; Brown, J.J.; Canali, C.; Zanoni, E.; Liu, T.W.; Meneghesso, G.

In: IEEE transactions on electron devices, Vol. 1999, No. 1, 1999, p. 2-9.

Research output: Contribution to journalArticleAcademic

TY - JOUR

T1 - On-State and Off-State Breakdown in GaInAs/InP Composite-Channel HEMT's with Variable GaInAs Channel Thickness

AU - Neviani, A.

AU - Oesterholt, R.

AU - Matloubian, M.

AU - Brown, J.J.

AU - Canali, C.

AU - Zanoni, E.

AU - Liu, T.W.

AU - Meneghesso, G.

PY - 1999

Y1 - 1999

KW - METIS-111642

M3 - Article

VL - 1999

SP - 2

EP - 9

JO - IEEE transactions on electron devices

JF - IEEE transactions on electron devices

SN - 0018-9383

IS - 1

ER -