On-State and Off-State Breakdown in GaInAs/InP Composite-Channel HEMT's with Variable GaInAs Channel Thickness

A. Neviani, R. Oesterholt, M. Matloubian, J.J. Brown, C. Canali, E. Zanoni, T.W. Liu, G. Meneghesso

    Research output: Contribution to journalArticleAcademic

    67 Citations (Scopus)
    Original languageUndefined
    Pages (from-to)2-9
    Number of pages8
    JournalIEEE transactions on electron devices
    Volume1999
    Issue number1
    Publication statusPublished - 1999

    Keywords

    • METIS-111642

    Cite this

    Neviani, A., Oesterholt, R., Matloubian, M., Brown, J. J., Canali, C., Zanoni, E., ... Meneghesso, G. (1999). On-State and Off-State Breakdown in GaInAs/InP Composite-Channel HEMT's with Variable GaInAs Channel Thickness. IEEE transactions on electron devices, 1999(1), 2-9.
    Neviani, A. ; Oesterholt, R. ; Matloubian, M. ; Brown, J.J. ; Canali, C. ; Zanoni, E. ; Liu, T.W. ; Meneghesso, G. / On-State and Off-State Breakdown in GaInAs/InP Composite-Channel HEMT's with Variable GaInAs Channel Thickness. In: IEEE transactions on electron devices. 1999 ; Vol. 1999, No. 1. pp. 2-9.
    @article{c2b8318d9e634d149748337948d7f29d,
    title = "On-State and Off-State Breakdown in GaInAs/InP Composite-Channel HEMT's with Variable GaInAs Channel Thickness",
    keywords = "METIS-111642",
    author = "A. Neviani and R. Oesterholt and M. Matloubian and J.J. Brown and C. Canali and E. Zanoni and T.W. Liu and G. Meneghesso",
    year = "1999",
    language = "Undefined",
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    Neviani, A, Oesterholt, R, Matloubian, M, Brown, JJ, Canali, C, Zanoni, E, Liu, TW & Meneghesso, G 1999, 'On-State and Off-State Breakdown in GaInAs/InP Composite-Channel HEMT's with Variable GaInAs Channel Thickness', IEEE transactions on electron devices, vol. 1999, no. 1, pp. 2-9.

    On-State and Off-State Breakdown in GaInAs/InP Composite-Channel HEMT's with Variable GaInAs Channel Thickness. / Neviani, A.; Oesterholt, R.; Matloubian, M.; Brown, J.J.; Canali, C.; Zanoni, E.; Liu, T.W.; Meneghesso, G.

    In: IEEE transactions on electron devices, Vol. 1999, No. 1, 1999, p. 2-9.

    Research output: Contribution to journalArticleAcademic

    TY - JOUR

    T1 - On-State and Off-State Breakdown in GaInAs/InP Composite-Channel HEMT's with Variable GaInAs Channel Thickness

    AU - Neviani, A.

    AU - Oesterholt, R.

    AU - Matloubian, M.

    AU - Brown, J.J.

    AU - Canali, C.

    AU - Zanoni, E.

    AU - Liu, T.W.

    AU - Meneghesso, G.

    PY - 1999

    Y1 - 1999

    KW - METIS-111642

    M3 - Article

    VL - 1999

    SP - 2

    EP - 9

    JO - IEEE transactions on electron devices

    JF - IEEE transactions on electron devices

    SN - 0018-9383

    IS - 1

    ER -