On-State and Off-State Breakdown in GaInAs/InP Composite-Channel HEMT's with Variable GaInAs Channel Thickness

A. Neviani, R. Oesterholt, M. Matloubian, J.J. Brown, C. Canali, E. Zanoni, T.W. Liu, G. Meneghesso

Research output: Contribution to journal › Article › Academic

Original language	Undefined
Pages (from-to)	2-9
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	1999
Issue number	1
Publication status	Published - 1999

Keywords

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title = "On-State and Off-State Breakdown in GaInAs/InP Composite-Channel HEMT's with Variable GaInAs Channel Thickness",

keywords = "METIS-111642",

author = "A. Neviani and R. Oesterholt and M. Matloubian and J.J. Brown and C. Canali and E. Zanoni and T.W. Liu and G. Meneghesso",

year = "1999",

language = "Undefined",

volume = "1999",

pages = "2--9",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

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TY - JOUR

T1 - On-State and Off-State Breakdown in GaInAs/InP Composite-Channel HEMT's with Variable GaInAs Channel Thickness

AU - Neviani, A.

AU - Oesterholt, R.

AU - Matloubian, M.

AU - Brown, J.J.

AU - Canali, C.

AU - Zanoni, E.

AU - Liu, T.W.

AU - Meneghesso, G.

PY - 1999

Y1 - 1999

KW - METIS-111642

M3 - Article

SN - 0018-9383

VL - 1999

SP - 2

EP - 9

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 1

ER -