On-State and Off-State Breakdown in GaInAs/InP Composite-Channel HEMT's with Variable GaInAs Channel Thickness

A. Neviani, R. Oesterholt, M. Matloubian, J.J. Brown, C. Canali, E. Zanoni, T.W. Liu, G. Meneghesso

    Research output: Contribution to journalArticleAcademic

    67 Citations (Scopus)
    Original languageUndefined
    Pages (from-to)2-9
    Number of pages8
    JournalIEEE transactions on electron devices
    Volume1999
    Issue number1
    Publication statusPublished - 1999

    Keywords

    • METIS-111642

    Cite this

    Neviani, A., Oesterholt, R., Matloubian, M., Brown, J. J., Canali, C., Zanoni, E., ... Meneghesso, G. (1999). On-State and Off-State Breakdown in GaInAs/InP Composite-Channel HEMT's with Variable GaInAs Channel Thickness. IEEE transactions on electron devices, 1999(1), 2-9.