On the charge storage and decay mechanism in silicon dioxide

W. Olthuis; P. Bergveld

doi:10.1109/ISE.1991.167177

On the charge storage and decay mechanism in silicon dioxide

W. Olthuis^*, P. Bergveld

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

53 Downloads (Pure)

Abstract

A mechanism for both the storage and the decay of charge in a charged silicon dioxide layer is proposed. The oxide layer needs neutral traps (NETs) to obtain stable trapped negative charge, after having been charged, resulting in an electret that can be applied in microphones. The hydrolysis of the silanol groups, followed by charge injection, results in an electrochemical reaction with immobile SiO^- as one of the reaction products. Decay of the stable charge thus obtained can occur by the clustering of water molecules at inner silanol groups, resulting in a conductive hydrogen bonded network, which eventually leads to the discharge of the electret.

Original language	English
Title of host publication	7th International Symposium on Electrets (ISE 7)
Subtitle of host publication	1991 Proceedings
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	16-26
Number of pages	11
ISBN (Print)	0-7803-0112-9
DOIs	https://doi.org/10.1109/ISE.1991.167177
Publication status	Published - 1 Jan 1992
Event	7th International Symposium on Electrets, ISE 1991 - Berlin, Germany Duration: 25 Sep 1991 → 27 Sep 1991 Conference number: 7

Conference

Conference	7th International Symposium on Electrets, ISE 1991
Abbreviated title	ISE
Country	Germany
City	Berlin
Period	25/09/91 → 27/09/91

Access to Document

10.1109/ISE.1991.167177

Olthuis1992onFinal published version, 359 KB

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