On the charge storage and decay mechanism in silicon dioxide

W. Olthuis*, P. Bergveld

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    3 Citations (Scopus)
    53 Downloads (Pure)

    Abstract

    A mechanism for both the storage and the decay of charge in a charged silicon dioxide layer is proposed. The oxide layer needs neutral traps (NETs) to obtain stable trapped negative charge, after having been charged, resulting in an electret that can be applied in microphones. The hydrolysis of the silanol groups, followed by charge injection, results in an electrochemical reaction with immobile SiO- as one of the reaction products. Decay of the stable charge thus obtained can occur by the clustering of water molecules at inner silanol groups, resulting in a conductive hydrogen bonded network, which eventually leads to the discharge of the electret.

    Original languageEnglish
    Title of host publication7th International Symposium on Electrets (ISE 7)
    Subtitle of host publication1991 Proceedings
    Place of PublicationPiscataway, NJ
    PublisherIEEE
    Pages16-26
    Number of pages11
    ISBN (Print)0-7803-0112-9
    DOIs
    Publication statusPublished - 1 Jan 1992
    Event7th International Symposium on Electrets, ISE 1991 - Berlin, Germany
    Duration: 25 Sep 199127 Sep 1991
    Conference number: 7

    Conference

    Conference7th International Symposium on Electrets, ISE 1991
    Abbreviated titleISE
    CountryGermany
    CityBerlin
    Period25/09/9127/09/91

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