On the degradation of field-plate assisted RESURF power devices

B.K. Boksteen, S. Dhar, A. Ferrara, A. Heringa, Raymond Josephus Engelbart Hueting, G.E.J. Koops, Cora Salm, Jurriaan Schmitz

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    3 Citations (Scopus)

    Abstract

    Hot-carrier degradation phenomena in field-plate assisted reduced surface field (RESURF) devices caused by high voltage off- and on-state stressing have been investigated. The device I-V characteristics are analyzed and modeled in detail. It is shown that via noninvasive low-voltage leakage characterization the surface generation velocity profiles after (high-voltage) stress can be extracted, enabling I-V degradation predictions across wide temperature ranges.
    Original languageUndefined
    Title of host publicationIEEE International Electron Devices Meeting, IEDM 2012
    Place of PublicationSan Francisco - USA
    PublisherIEEE International Electron Device Meeting
    Pages311-314
    Number of pages4
    ISBN (Print)978-1-4673-4872-0
    DOIs
    Publication statusPublished - 10 Dec 2012

    Publication series

    NameTechnical Digest
    PublisherIEEE International Electron Device Meeting
    ISSN (Print)0163-1918

    Keywords

    • EWI-23162
    • METIS-296353
    • IR-85340

    Cite this

    Boksteen, B. K., Dhar, S., Ferrara, A., Heringa, A., Hueting, R. J. E., Koops, G. E. J., ... Schmitz, J. (2012). On the degradation of field-plate assisted RESURF power devices. In IEEE International Electron Devices Meeting, IEDM 2012 (pp. 311-314). (Technical Digest). San Francisco - USA: IEEE International Electron Device Meeting. https://doi.org/10.1109/IEDM.2012.6479036