On the degradation of field-plate assisted RESURF power devices

B.K. Boksteen; S. Dhar; A. Ferrara; A. Heringa; Raymond Josephus Engelbart Hueting; G.E.J. Koops; Cora Salm; Jurriaan Schmitz

doi:10.1109/IEDM.2012.6479036

On the degradation of field-plate assisted RESURF power devices

B.K. Boksteen, S. Dhar, A. Ferrara, A. Heringa, Raymond Josephus Engelbart Hueting, G.E.J. Koops, Cora Salm, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

4 Citations (Scopus)

1 Downloads (Pure)

Abstract

Hot-carrier degradation phenomena in field-plate assisted reduced surface field (RESURF) devices caused by high voltage off- and on-state stressing have been investigated. The device I-V characteristics are analyzed and modeled in detail. It is shown that via noninvasive low-voltage leakage characterization the surface generation velocity profiles after (high-voltage) stress can be extracted, enabling I-V degradation predictions across wide temperature ranges.

Original language	Undefined
Title of host publication	IEEE International Electron Devices Meeting, IEDM 2012
Place of Publication	San Francisco - USA
Publisher	IEEE
Pages	311-314
Number of pages	4
ISBN (Print)	978-1-4673-4872-0
DOIs	https://doi.org/10.1109/IEDM.2012.6479036
Publication status	Published - 10 Dec 2012
Event	IEEE International Electron Devices Meeting, IEDM 2012, San Francisco, CA, USA: IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco - USA Duration: 10 Dec 2012 → …

Publication series

Name	Technical Digest
Publisher	IEEE International Electron Device Meeting
ISSN (Print)	0163-1918

Conference

Conference	IEEE International Electron Devices Meeting, IEDM 2012, San Francisco, CA, USA
City	San Francisco - USA
Period	10/12/12 → …

Keywords

EWI-23162
METIS-296353
IR-85340

Access to Document

10.1109/IEDM.2012.6479036

http://eprints.eemcs.utwente.nl/secure2/23162/01/IEDM12_13_4_B_Boksteen_(2).pdf

Cite this

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title = "On the degradation of field-plate assisted RESURF power devices",

abstract = "Hot-carrier degradation phenomena in field-plate assisted reduced surface field (RESURF) devices caused by high voltage off- and on-state stressing have been investigated. The device I-V characteristics are analyzed and modeled in detail. It is shown that via noninvasive low-voltage leakage characterization the surface generation velocity profiles after (high-voltage) stress can be extracted, enabling I-V degradation predictions across wide temperature ranges.",

keywords = "EWI-23162, METIS-296353, IR-85340",

author = "B.K. Boksteen and S. Dhar and A. Ferrara and A. Heringa and Hueting, {Raymond Josephus Engelbart} and G.E.J. Koops and Cora Salm and Jurriaan Schmitz",

note = "10.1109/IEDM.2012.6479036 ; IEEE International Electron Devices Meeting, IEDM 2012, San Francisco, CA, USA ; Conference date: 10-12-2012",

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Boksteen, BK, Dhar, S, Ferrara, A, Heringa, A, Hueting, RJE, Koops, GEJ, Salm, C & Schmitz, J 2012, On the degradation of field-plate assisted RESURF power devices. in IEEE International Electron Devices Meeting, IEDM 2012. Technical Digest, IEEE, San Francisco - USA, pp. 311-314, IEEE International Electron Devices Meeting, IEDM 2012, San Francisco, CA, USA, San Francisco - USA, 10/12/12. https://doi.org/10.1109/IEDM.2012.6479036

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T1 - On the degradation of field-plate assisted RESURF power devices

AU - Boksteen, B.K.

AU - Dhar, S.

AU - Ferrara, A.

AU - Heringa, A.

AU - Hueting, Raymond Josephus Engelbart

AU - Koops, G.E.J.

AU - Salm, Cora

AU - Schmitz, Jurriaan

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PY - 2012/12/10

Y1 - 2012/12/10

N2 - Hot-carrier degradation phenomena in field-plate assisted reduced surface field (RESURF) devices caused by high voltage off- and on-state stressing have been investigated. The device I-V characteristics are analyzed and modeled in detail. It is shown that via noninvasive low-voltage leakage characterization the surface generation velocity profiles after (high-voltage) stress can be extracted, enabling I-V degradation predictions across wide temperature ranges.

AB - Hot-carrier degradation phenomena in field-plate assisted reduced surface field (RESURF) devices caused by high voltage off- and on-state stressing have been investigated. The device I-V characteristics are analyzed and modeled in detail. It is shown that via noninvasive low-voltage leakage characterization the surface generation velocity profiles after (high-voltage) stress can be extracted, enabling I-V degradation predictions across wide temperature ranges.

KW - EWI-23162

KW - METIS-296353

KW - IR-85340

U2 - 10.1109/IEDM.2012.6479036

DO - 10.1109/IEDM.2012.6479036

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