On the difference between optically and electrically determined resistivity of ultra-thin titanium nitride films

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    32 Citations (Scopus)

    Abstract

    This work reports on the determination and comparison of the resistivity of ultra-thin atomic layer deposited titanium nitride films in the thickness range 0.65–20 nm using spectroscopic ellipsometry and electrical test structures. We found that for films thicker than 4 nm, the resistivity values obtained by the two techniques are in good agreement. However, below 4 nm, the comparison shows an increasing difference with decreasing film thickness. A difference with a factor of 3 was found at 1.8 nm and increased up to hundreds at 0.65 nm. We attribute this significant difference to the electron scattering effects at grain boundaries and interfaces which can not be fully taken into account by spectroscopic ellipsometry measurements.
    Original languageUndefined
    Title of host publicationSURFINT-SREN III
    Place of PublicationAmsterdam
    PublisherElsevier
    Pages45-49
    Number of pages5
    DOIs
    Publication statusPublished - 15 Mar 2013

    Publication series

    NameApplied Surface Science
    PublisherElsevier
    Volume269
    ISSN (Print)0169-4332
    ISSN (Electronic)1873-5584

    Keywords

    • Titanium nitride Resistivity Spectroscopic ellipsometry Current–voltage characteristics
    • METIS-296284
    • IR-84593
    • EWI-23036

    Cite this

    @inproceedings{ede925f825e8490d914adef49864f4be,
    title = "On the difference between optically and electrically determined resistivity of ultra-thin titanium nitride films",
    abstract = "This work reports on the determination and comparison of the resistivity of ultra-thin atomic layer deposited titanium nitride films in the thickness range 0.65–20 nm using spectroscopic ellipsometry and electrical test structures. We found that for films thicker than 4 nm, the resistivity values obtained by the two techniques are in good agreement. However, below 4 nm, the comparison shows an increasing difference with decreasing film thickness. A difference with a factor of 3 was found at 1.8 nm and increased up to hundreds at 0.65 nm. We attribute this significant difference to the electron scattering effects at grain boundaries and interfaces which can not be fully taken into account by spectroscopic ellipsometry measurements.",
    keywords = "Titanium nitride Resistivity Spectroscopic ellipsometry Current–voltage characteristics, METIS-296284, IR-84593, EWI-23036",
    author = "{Van Hao}, B. and Kovalgin, {Alexeij Y.} and Wolters, {Robertus A.M.}",
    note = "Progress in Applied Surface, Interface and Thin Film Science 2012 Solar Renewable Energy News III, May 14–18, 2012, Florence, Italy (SURFINT-SREN III)",
    year = "2013",
    month = "3",
    day = "15",
    doi = "10.1016/j.apsusc.2012.09.074",
    language = "Undefined",
    series = "Applied Surface Science",
    publisher = "Elsevier",
    pages = "45--49",
    booktitle = "SURFINT-SREN III",

    }

    On the difference between optically and electrically determined resistivity of ultra-thin titanium nitride films. / Van Hao, B.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

    SURFINT-SREN III. Amsterdam : Elsevier, 2013. p. 45-49 (Applied Surface Science; Vol. 269).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    TY - GEN

    T1 - On the difference between optically and electrically determined resistivity of ultra-thin titanium nitride films

    AU - Van Hao, B.

    AU - Kovalgin, Alexeij Y.

    AU - Wolters, Robertus A.M.

    N1 - Progress in Applied Surface, Interface and Thin Film Science 2012 Solar Renewable Energy News III, May 14–18, 2012, Florence, Italy (SURFINT-SREN III)

    PY - 2013/3/15

    Y1 - 2013/3/15

    N2 - This work reports on the determination and comparison of the resistivity of ultra-thin atomic layer deposited titanium nitride films in the thickness range 0.65–20 nm using spectroscopic ellipsometry and electrical test structures. We found that for films thicker than 4 nm, the resistivity values obtained by the two techniques are in good agreement. However, below 4 nm, the comparison shows an increasing difference with decreasing film thickness. A difference with a factor of 3 was found at 1.8 nm and increased up to hundreds at 0.65 nm. We attribute this significant difference to the electron scattering effects at grain boundaries and interfaces which can not be fully taken into account by spectroscopic ellipsometry measurements.

    AB - This work reports on the determination and comparison of the resistivity of ultra-thin atomic layer deposited titanium nitride films in the thickness range 0.65–20 nm using spectroscopic ellipsometry and electrical test structures. We found that for films thicker than 4 nm, the resistivity values obtained by the two techniques are in good agreement. However, below 4 nm, the comparison shows an increasing difference with decreasing film thickness. A difference with a factor of 3 was found at 1.8 nm and increased up to hundreds at 0.65 nm. We attribute this significant difference to the electron scattering effects at grain boundaries and interfaces which can not be fully taken into account by spectroscopic ellipsometry measurements.

    KW - Titanium nitride Resistivity Spectroscopic ellipsometry Current–voltage characteristics

    KW - METIS-296284

    KW - IR-84593

    KW - EWI-23036

    U2 - 10.1016/j.apsusc.2012.09.074

    DO - 10.1016/j.apsusc.2012.09.074

    M3 - Conference contribution

    T3 - Applied Surface Science

    SP - 45

    EP - 49

    BT - SURFINT-SREN III

    PB - Elsevier

    CY - Amsterdam

    ER -