On the effect of nano-injectors on conduction in silicon p-i-n diodes

P–i–n diodes are widely used in power electronics [1-2], solar cells [3], light detection [4] and also light generation [5]. Contrary to the case of light detection or conversion, light generation is usually achieved by biasing the device in forward mode, in a condition of carrier injection. Depending on its level, the device can operate in regimes controlled by respectively generation/recombination current, diffusion current or the so called series resistance [6]. The injection level also controls the balance between the recombination mechanisms, and it is commonly controlled via the applied bias, which could be fixed by the specific application rather then being a free parameter. A possible approach to better control the injection level is to modify the features of the carrier injectors, for instance by thinning down the junction area [7] or reducing the injectors itself to a nanometer scale [8]. A practical way to realize nano-injectors is to embed the intrinsic region in oxide and create the connection between the intrinsic region and the two extension regions via antifuses, as realized in [9]. The size and properties of the antifuses can be controlled electrically, making it suitable to analyze the effects of progressive scaling of the dimensions of carrier injectors. In this work, we compare electrical behaviors of a standard p-i-n diode with antifuse p-i-n diodes programmed at different conditions. Electrical I-V measurements are performed at temperatures between -20 and 200 °C (I-V-T characteristics) in order to investigate the dominant mechanisms in the conduction.