On the feasibility of silicene encapsulation by AlN deposited using an atomic layer deposition process

B. Van Hao, Frank Bert Wiggers, R. Friedlein, Y. Yamada-Takamura, Alexeij Y. Kovalgin, Machiel Pieter de Jong

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

Since epitaxial silicene is not chemically inert under ambient conditions, its application in devices and the ex-situ characterization outside of ultrahigh vacuum environments require the use of an insulating capping layer. Here, we report on a study of the feasibility of encapsulating epitaxial silicene on ZrB2(0001) thin films grown on Si(111) substrates by aluminum nitride (AlN) deposited using trimethylaluminum (TMA) and ammonia (NH3) precursors. By in-situ high-resolution core-level photoelectron spectroscopy, the chemical modifications of the surface due to subsequent exposure to TMA and NH3 molecules, at temperatures of 300 ◦C and 400 ◦C, espectively, have been investigated. While an AlN-related layer can indeed be grown, silicene reacts strongly with both precursor molecules resulting in the formation of Si–C and Si–N bonds such that the use of these precursors does not allow for the protective AlN encapsulation that leaves the electronic properties of silicene intact.
Original languageUndefined
Pages (from-to)064712
Number of pages5
JournalJournal of chemical physics
Volume142
DOIs
Publication statusPublished - 9 Feb 2015

Keywords

  • EWI-25776
  • IR-94448
  • METIS-312508

Cite this

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title = "On the feasibility of silicene encapsulation by AlN deposited using an atomic layer deposition process",
abstract = "Since epitaxial silicene is not chemically inert under ambient conditions, its application in devices and the ex-situ characterization outside of ultrahigh vacuum environments require the use of an insulating capping layer. Here, we report on a study of the feasibility of encapsulating epitaxial silicene on ZrB2(0001) thin films grown on Si(111) substrates by aluminum nitride (AlN) deposited using trimethylaluminum (TMA) and ammonia (NH3) precursors. By in-situ high-resolution core-level photoelectron spectroscopy, the chemical modifications of the surface due to subsequent exposure to TMA and NH3 molecules, at temperatures of 300 ◦C and 400 ◦C, espectively, have been investigated. While an AlN-related layer can indeed be grown, silicene reacts strongly with both precursor molecules resulting in the formation of Si–C and Si–N bonds such that the use of these precursors does not allow for the protective AlN encapsulation that leaves the electronic properties of silicene intact.",
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On the feasibility of silicene encapsulation by AlN deposited using an atomic layer deposition process. / Van Hao, B.; Wiggers, Frank Bert; Friedlein, R.; Yamada-Takamura, Y.; Kovalgin, Alexeij Y.; de Jong, Machiel Pieter.

In: Journal of chemical physics, Vol. 142, 09.02.2015, p. 064712.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - On the feasibility of silicene encapsulation by AlN deposited using an atomic layer deposition process

AU - Van Hao, B.

AU - Wiggers, Frank Bert

AU - Friedlein, R.

AU - Yamada-Takamura, Y.

AU - Kovalgin, Alexeij Y.

AU - de Jong, Machiel Pieter

N1 - eemcs-eprint-25776

PY - 2015/2/9

Y1 - 2015/2/9

N2 - Since epitaxial silicene is not chemically inert under ambient conditions, its application in devices and the ex-situ characterization outside of ultrahigh vacuum environments require the use of an insulating capping layer. Here, we report on a study of the feasibility of encapsulating epitaxial silicene on ZrB2(0001) thin films grown on Si(111) substrates by aluminum nitride (AlN) deposited using trimethylaluminum (TMA) and ammonia (NH3) precursors. By in-situ high-resolution core-level photoelectron spectroscopy, the chemical modifications of the surface due to subsequent exposure to TMA and NH3 molecules, at temperatures of 300 ◦C and 400 ◦C, espectively, have been investigated. While an AlN-related layer can indeed be grown, silicene reacts strongly with both precursor molecules resulting in the formation of Si–C and Si–N bonds such that the use of these precursors does not allow for the protective AlN encapsulation that leaves the electronic properties of silicene intact.

AB - Since epitaxial silicene is not chemically inert under ambient conditions, its application in devices and the ex-situ characterization outside of ultrahigh vacuum environments require the use of an insulating capping layer. Here, we report on a study of the feasibility of encapsulating epitaxial silicene on ZrB2(0001) thin films grown on Si(111) substrates by aluminum nitride (AlN) deposited using trimethylaluminum (TMA) and ammonia (NH3) precursors. By in-situ high-resolution core-level photoelectron spectroscopy, the chemical modifications of the surface due to subsequent exposure to TMA and NH3 molecules, at temperatures of 300 ◦C and 400 ◦C, espectively, have been investigated. While an AlN-related layer can indeed be grown, silicene reacts strongly with both precursor molecules resulting in the formation of Si–C and Si–N bonds such that the use of these precursors does not allow for the protective AlN encapsulation that leaves the electronic properties of silicene intact.

KW - EWI-25776

KW - IR-94448

KW - METIS-312508

U2 - 10.1063/1.4907375

DO - 10.1063/1.4907375

M3 - Article

VL - 142

SP - 064712

JO - Journal of chemical physics

JF - Journal of chemical physics

SN - 0021-9606

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