Abstract
This paper presents the operational characteristics of several integrated Micromegas detectors. These detectors called InGrids are made by means of micro-electronic fabrication techniques. These techniques allow a large variety of detector geometry to be made and studied. Gain, gain homogeneity and energy resolution were measured for various amplification gap sizes, hole pitches and hole diameters in Argon/Isobutane. Gain measurements as a function of gap thickness are compared to the Rose and Korff formula and a model of the detector gain. Our model uses electric field maps and MAGBOLTZ calculated amplification coefficients.
| Original language | English |
|---|---|
| Article number | 10.1016/j.nima.2007.01.108 |
| Pages (from-to) | 1-4 |
| Number of pages | 4 |
| Journal | Nuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment |
| Volume | 576 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 17 Jun 2007 |
Keywords
- Gain
- Integrated micromegas
- Energy resolution
- Wafer post-procesing
- SC-RID: Radiation Imaging detectors
- 2023 OA procedure
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