Abstract
| Original language | English |
|---|---|
| Title of host publication | Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2 |
| Subtitle of host publication | New Materials, Processes, and Equipment |
| Editors | F. Roozeboom, D.-L. Kwong, H. Iwai, M.C. Öztürk, P.J. Timans, E. Gusev |
| Place of Publication | Pennington, N.J. |
| Publisher | The Electrochemical Society Inc. |
| Pages | 191-202 |
| Number of pages | 12 |
| ISBN (Print) | 1-56677-502-7 |
| DOIs | |
| Publication status | Published - 29 Oct 2006 |
| Event | 210th Electrochemical Society Meeting, ECS 2006 - Cancún, Mexico Duration: 29 Oct 2006 → 3 Nov 2006 |
Publication series
| Name | ECS Transactions |
|---|---|
| Publisher | Electrochemical Society |
| Number | 2 |
| Volume | 3 |
| ISSN (Print) | 1938-5862 |
| ISSN (Electronic) | 1938-6737 |
Conference
| Conference | 210th Electrochemical Society Meeting, ECS 2006 |
|---|---|
| Abbreviated title | ECS 2006 |
| Country | Mexico |
| City | Cancún |
| Period | 29/10/06 → 3/11/06 |
Fingerprint
Keywords
- SC-ICF: Integrated Circuit Fabrication
Cite this
}
On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light. / Kovalgin, Alexey Y.; Zinine, Andrei; Bankras, Radko; Wormeester, Herbert; Poelsema, Bene; Schmitz, Jurriaan.
Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment. ed. / F. Roozeboom; D.-L. Kwong; H. Iwai; M.C. Öztürk; P.J. Timans; E. Gusev. Pennington, N.J. : The Electrochemical Society Inc., 2006. p. 191-202 (ECS Transactions; Vol. 3, No. 2).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review
TY - GEN
T1 - On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light
AU - Kovalgin, Alexey Y.
AU - Zinine, Andrei
AU - Bankras, Radko
AU - Wormeester, Herbert
AU - Poelsema, Bene
AU - Schmitz, Jurriaan
PY - 2006/10/29
Y1 - 2006/10/29
N2 - After a cleaning procedure, a silicon surface can be terminated by Si-OH groups which results in a high chemical activity. As it is accepted, after removing the wet-chemically grown oxide layer using an HF solution, the surface becomes terminated with Si-H groups. This results in a chemically stable surface (e.g., retarded formation of native oxide). The stability over a period of several hours is reported [1].
AB - After a cleaning procedure, a silicon surface can be terminated by Si-OH groups which results in a high chemical activity. As it is accepted, after removing the wet-chemically grown oxide layer using an HF solution, the surface becomes terminated with Si-H groups. This results in a chemically stable surface (e.g., retarded formation of native oxide). The stability over a period of several hours is reported [1].
KW - SC-ICF: Integrated Circuit Fabrication
U2 - 10.1149/1.2356279
DO - 10.1149/1.2356279
M3 - Conference contribution
SN - 1-56677-502-7
T3 - ECS Transactions
SP - 191
EP - 202
BT - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2
A2 - Roozeboom, F.
A2 - Kwong, D.-L.
A2 - Iwai, H.
A2 - Öztürk, M.C.
A2 - Timans, P.J.
A2 - Gusev, E.
PB - The Electrochemical Society Inc.
CY - Pennington, N.J.
ER -