@inproceedings{ebef4148cd9b444494b65ebab84f626a,
title = "On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light",
abstract = "After a cleaning procedure, a silicon surface can be terminated by Si-OH groups which results in a high chemical activity. As it is accepted, after removing the wet-chemically grown oxide layer using an HF solution, the surface becomes terminated with Si-H groups. This results in a chemically stable surface (e.g., retarded formation of native oxide). The stability over a period of several hours is reported [1].",
keywords = "SC-ICF: Integrated Circuit Fabrication",
author = "Kovalgin, {Alexey Y.} and Andrei Zinine and Radko Bankras and Herbert Wormeester and Bene Poelsema and Jurriaan Schmitz",
year = "2006",
month = oct,
day = "29",
doi = "10.1149/1.2356279",
language = "English",
isbn = "1-56677-502-7",
series = "ECS Transactions",
publisher = "Electrochemical Society",
number = "2",
pages = "191--202",
editor = "F. Roozeboom and D.-L. Kwong and H. Iwai and M.C. {\"O}zt{\"u}rk and P.J. Timans and E. Gusev",
booktitle = "Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2",
address = "United States",
note = "210th Electrochemical Society Meeting, ECS 2006, ECS 2006 ; Conference date: 29-10-2006 Through 03-11-2006",
}