On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light

Alexey Y. Kovalgin; Andrei Zinine; Radko Bankras; Herbert Wormeester; Bene Poelsema; Jurriaan Schmitz

doi:10.1149/1.2356279

On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light

Alexey Y. Kovalgin, Andrei Zinine, Radko Bankras, Herbert Wormeester, Bene Poelsema, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

Abstract

After a cleaning procedure, a silicon surface can be terminated by Si-OH groups which results in a high chemical activity. As it is accepted, after removing the wet-chemically grown oxide layer using an HF solution, the surface becomes terminated with Si-H groups. This results in a chemically stable surface (e.g., retarded formation of native oxide). The stability over a period of several hours is reported [1].

Original language	English
Title of host publication	Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2
Subtitle of host publication	New Materials, Processes, and Equipment
Editors	F. Roozeboom, D.-L. Kwong, H. Iwai, M.C. Öztürk, P.J. Timans, E. Gusev
Place of Publication	Pennington, N.J.
Publisher	The Electrochemical Society Inc.
Pages	191-202
Number of pages	12
ISBN (Print)	1-56677-502-7
DOIs	https://doi.org/10.1149/1.2356279
Publication status	Published - 29 Oct 2006
Event	210th Electrochemical Society Meeting, ECS 2006 - Cancún, Mexico Duration: 29 Oct 2006 → 3 Nov 2006

Publication series

Name	ECS Transactions
Publisher	Electrochemical Society
Number	2
Volume	3
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	210th Electrochemical Society Meeting, ECS 2006
Abbreviated title	ECS 2006
Country	Mexico
City	Cancún
Period	29/10/06 → 3/11/06

Keywords

SC-ICF: Integrated Circuit Fabrication

Access to Document

10.1149/1.2356279

Cite this

Kovalgin, A. Y., Zinine, A., Bankras, R., Wormeester, H., Poelsema, B., & Schmitz, J. (2006). On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light. In F. Roozeboom, D-L. Kwong, H. Iwai, M. C. Öztürk, P. J. Timans, & E. Gusev (Eds.), Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment (pp. 191-202). (ECS Transactions; Vol. 3, No. 2). The Electrochemical Society Inc.. https://doi.org/10.1149/1.2356279

Kovalgin, Alexey Y. ; Zinine, Andrei ; Bankras, Radko ; Wormeester, Herbert ; Poelsema, Bene ; Schmitz, Jurriaan. / On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light. Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment. editor / F. Roozeboom ; D.-L. Kwong ; H. Iwai ; M.C. Öztürk ; P.J. Timans ; E. Gusev. Pennington, N.J. : The Electrochemical Society Inc., 2006. pp. 191-202 (ECS Transactions; 2).

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title = "On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light",

abstract = "After a cleaning procedure, a silicon surface can be terminated by Si-OH groups which results in a high chemical activity. As it is accepted, after removing the wet-chemically grown oxide layer using an HF solution, the surface becomes terminated with Si-H groups. This results in a chemically stable surface (e.g., retarded formation of native oxide). The stability over a period of several hours is reported [1].",

keywords = "SC-ICF: Integrated Circuit Fabrication",

author = "Kovalgin, {Alexey Y.} and Andrei Zinine and Radko Bankras and Herbert Wormeester and Bene Poelsema and Jurriaan Schmitz",

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booktitle = "Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2",

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note = "210th Electrochemical Society Meeting, ECS 2006, ECS 2006 ; Conference date: 29-10-2006 Through 03-11-2006",

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Kovalgin, AY, Zinine, A, Bankras, R, Wormeester, H , Poelsema, B & Schmitz, J 2006, On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light. in F Roozeboom, D-L Kwong, H Iwai, MC Öztürk, PJ Timans & E Gusev (eds), Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment. ECS Transactions, no. 2, vol. 3, The Electrochemical Society Inc., Pennington, N.J., pp. 191-202, 210th Electrochemical Society Meeting, ECS 2006, Cancún, Mexico, 29/10/06. https://doi.org/10.1149/1.2356279

On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light. / Kovalgin, Alexey Y.; Zinine, Andrei; Bankras, Radko; Wormeester, Herbert ; Poelsema, Bene ; Schmitz, Jurriaan.

Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment. ed. / F. Roozeboom; D.-L. Kwong; H. Iwai; M.C. Öztürk; P.J. Timans; E. Gusev. Pennington, N.J. : The Electrochemical Society Inc., 2006. p. 191-202 (ECS Transactions; Vol. 3, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Poelsema, Bene

AU - Schmitz, Jurriaan

PY - 2006/10/29

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N2 - After a cleaning procedure, a silicon surface can be terminated by Si-OH groups which results in a high chemical activity. As it is accepted, after removing the wet-chemically grown oxide layer using an HF solution, the surface becomes terminated with Si-H groups. This results in a chemically stable surface (e.g., retarded formation of native oxide). The stability over a period of several hours is reported [1].

AB - After a cleaning procedure, a silicon surface can be terminated by Si-OH groups which results in a high chemical activity. As it is accepted, after removing the wet-chemically grown oxide layer using an HF solution, the surface becomes terminated with Si-H groups. This results in a chemically stable surface (e.g., retarded formation of native oxide). The stability over a period of several hours is reported [1].

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BT - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2

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Kovalgin AY, Zinine A, Bankras R, Wormeester H , Poelsema B , Schmitz J. On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light. In Roozeboom F, Kwong D-L, Iwai H, Öztürk MC, Timans PJ, Gusev E, editors, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment. Pennington, N.J.: The Electrochemical Society Inc. 2006. p. 191-202. (ECS Transactions; 2). https://doi.org/10.1149/1.2356279

On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light

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