On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

After a cleaning procedure, a silicon surface can be terminated by Si-OH groups which results in a high chemical activity. As it is accepted, after removing the wet-chemically grown oxide layer using an HF solution, the surface becomes terminated with Si-H groups. This results in a chemically stable surface (e.g., retarded formation of native oxide). The stability over a period of several hours is reported [1].
Original languageEnglish
Title of host publicationAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2
Subtitle of host publicationNew Materials, Processes, and Equipment
EditorsF. Roozeboom, D.-L. Kwong, H. Iwai, M.C. Öztürk, P.J. Timans, E. Gusev
Place of PublicationPennington, N.J.
PublisherThe Electrochemical Society Inc.
Pages191-202
Number of pages12
ISBN (Print)1-56677-502-7
DOIs
Publication statusPublished - 29 Oct 2006
Event210th Electrochemical Society Meeting, ECS 2006 - Cancún, Mexico
Duration: 29 Oct 20063 Nov 2006

Publication series

NameECS Transactions
PublisherElectrochemical Society
Number2
Volume3
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference210th Electrochemical Society Meeting, ECS 2006
Abbreviated titleECS 2006
CountryMexico
CityCancún
Period29/10/063/11/06

Fingerprint

illumination
oxides
silicon
hydrogen
cleaning

Keywords

  • SC-ICF: Integrated Circuit Fabrication

Cite this

Kovalgin, A. Y., Zinine, A., Bankras, R., Wormeester, H., Poelsema, B., & Schmitz, J. (2006). On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light. In F. Roozeboom, D-L. Kwong, H. Iwai, M. C. Öztürk, P. J. Timans, & E. Gusev (Eds.), Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment (pp. 191-202). (ECS Transactions; Vol. 3, No. 2). Pennington, N.J.: The Electrochemical Society Inc.. https://doi.org/10.1149/1.2356279
Kovalgin, Alexey Y. ; Zinine, Andrei ; Bankras, Radko ; Wormeester, Herbert ; Poelsema, Bene ; Schmitz, Jurriaan. / On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light. Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment. editor / F. Roozeboom ; D.-L. Kwong ; H. Iwai ; M.C. Öztürk ; P.J. Timans ; E. Gusev. Pennington, N.J. : The Electrochemical Society Inc., 2006. pp. 191-202 (ECS Transactions; 2).
@inproceedings{ebef4148cd9b444494b65ebab84f626a,
title = "On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light",
abstract = "After a cleaning procedure, a silicon surface can be terminated by Si-OH groups which results in a high chemical activity. As it is accepted, after removing the wet-chemically grown oxide layer using an HF solution, the surface becomes terminated with Si-H groups. This results in a chemically stable surface (e.g., retarded formation of native oxide). The stability over a period of several hours is reported [1].",
keywords = "SC-ICF: Integrated Circuit Fabrication",
author = "Kovalgin, {Alexey Y.} and Andrei Zinine and Radko Bankras and Herbert Wormeester and Bene Poelsema and Jurriaan Schmitz",
year = "2006",
month = "10",
day = "29",
doi = "10.1149/1.2356279",
language = "English",
isbn = "1-56677-502-7",
series = "ECS Transactions",
publisher = "The Electrochemical Society Inc.",
number = "2",
pages = "191--202",
editor = "F. Roozeboom and D.-L. Kwong and H. Iwai and M.C. {\"O}zt{\"u}rk and P.J. Timans and E. Gusev",
booktitle = "Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2",
address = "United States",

}

Kovalgin, AY, Zinine, A, Bankras, R, Wormeester, H, Poelsema, B & Schmitz, J 2006, On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light. in F Roozeboom, D-L Kwong, H Iwai, MC Öztürk, PJ Timans & E Gusev (eds), Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment. ECS Transactions, no. 2, vol. 3, The Electrochemical Society Inc., Pennington, N.J., pp. 191-202, 210th Electrochemical Society Meeting, ECS 2006, Cancún, Mexico, 29/10/06. https://doi.org/10.1149/1.2356279

On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light. / Kovalgin, Alexey Y.; Zinine, Andrei; Bankras, Radko; Wormeester, Herbert; Poelsema, Bene; Schmitz, Jurriaan.

Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment. ed. / F. Roozeboom; D.-L. Kwong; H. Iwai; M.C. Öztürk; P.J. Timans; E. Gusev. Pennington, N.J. : The Electrochemical Society Inc., 2006. p. 191-202 (ECS Transactions; Vol. 3, No. 2).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light

AU - Kovalgin, Alexey Y.

AU - Zinine, Andrei

AU - Bankras, Radko

AU - Wormeester, Herbert

AU - Poelsema, Bene

AU - Schmitz, Jurriaan

PY - 2006/10/29

Y1 - 2006/10/29

N2 - After a cleaning procedure, a silicon surface can be terminated by Si-OH groups which results in a high chemical activity. As it is accepted, after removing the wet-chemically grown oxide layer using an HF solution, the surface becomes terminated with Si-H groups. This results in a chemically stable surface (e.g., retarded formation of native oxide). The stability over a period of several hours is reported [1].

AB - After a cleaning procedure, a silicon surface can be terminated by Si-OH groups which results in a high chemical activity. As it is accepted, after removing the wet-chemically grown oxide layer using an HF solution, the surface becomes terminated with Si-H groups. This results in a chemically stable surface (e.g., retarded formation of native oxide). The stability over a period of several hours is reported [1].

KW - SC-ICF: Integrated Circuit Fabrication

U2 - 10.1149/1.2356279

DO - 10.1149/1.2356279

M3 - Conference contribution

SN - 1-56677-502-7

T3 - ECS Transactions

SP - 191

EP - 202

BT - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2

A2 - Roozeboom, F.

A2 - Kwong, D.-L.

A2 - Iwai, H.

A2 - Öztürk, M.C.

A2 - Timans, P.J.

A2 - Gusev, E.

PB - The Electrochemical Society Inc.

CY - Pennington, N.J.

ER -

Kovalgin AY, Zinine A, Bankras R, Wormeester H, Poelsema B, Schmitz J. On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light. In Roozeboom F, Kwong D-L, Iwai H, Öztürk MC, Timans PJ, Gusev E, editors, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment. Pennington, N.J.: The Electrochemical Society Inc. 2006. p. 191-202. (ECS Transactions; 2). https://doi.org/10.1149/1.2356279