On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light

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2 Citations (Scopus)

Abstract

After a cleaning procedure, a silicon surface can be terminated by Si-OH groups which results in a high chemical activity. As it is accepted, after removing the wet-chemically grown oxide layer using an HF solution, the surface becomes terminated with Si-H groups. This results in a chemically stable surface (e.g., retarded formation of native oxide). The stability over a period of several hours is reported [1].
Original languageEnglish
Title of host publicationAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2
Subtitle of host publicationNew Materials, Processes, and Equipment
EditorsF. Roozeboom, D.-L. Kwong, H. Iwai, M.C. Öztürk, P.J. Timans, E. Gusev
Place of PublicationPennington, N.J.
PublisherThe Electrochemical Society Inc.
Pages191-202
Number of pages12
ISBN (Print)1-56677-502-7
DOIs
Publication statusPublished - 29 Oct 2006
Event210th Electrochemical Society Meeting, ECS 2006 - Cancún, Mexico
Duration: 29 Oct 20063 Nov 2006

Publication series

NameECS Transactions
PublisherElectrochemical Society
Number2
Volume3
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference210th Electrochemical Society Meeting, ECS 2006
Abbreviated titleECS 2006
CountryMexico
CityCancún
Period29/10/063/11/06

Keywords

  • SC-ICF: Integrated Circuit Fabrication

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    Kovalgin, A. Y., Zinine, A., Bankras, R., Wormeester, H., Poelsema, B., & Schmitz, J. (2006). On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light. In F. Roozeboom, D-L. Kwong, H. Iwai, M. C. Öztürk, P. J. Timans, & E. Gusev (Eds.), Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment (pp. 191-202). (ECS Transactions; Vol. 3, No. 2). Pennington, N.J.: The Electrochemical Society Inc.. https://doi.org/10.1149/1.2356279