On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light

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7 Downloads (Pure)

Abstract

After a cleaning procedure, a silicon surface can be terminated by Si-OH groups which results in a high chemical activity. As it is accepted, after removing the wet-chemically grown oxide layer using an HF solution, the surface becomes terminated with Si-H groups. This results in a chemically stable surface (e.g., retarded formation of native oxide). The stability over a period of several hours is reported [1].
Original languageEnglish
Title of host publicationAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2
Subtitle of host publicationNew Materials, Processes, and Equipment
EditorsF. Roozeboom, D.-L. Kwong, H. Iwai, M.C. Öztürk, P.J. Timans, E. Gusev
Place of PublicationPennington, N.J.
PublisherElectrochemical Society
Pages191-202
Number of pages12
ISBN (Print)1-56677-502-7
DOIs
Publication statusPublished - 29 Oct 2006
Event210th Electrochemical Society Meeting, ECS 2006 - Cancún, Mexico
Duration: 29 Oct 20063 Nov 2006

Publication series

NameECS Transactions
PublisherElectrochemical Society
Number2
Volume3
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference210th Electrochemical Society Meeting, ECS 2006
Abbreviated titleECS 2006
Country/TerritoryMexico
CityCancún
Period29/10/063/11/06

Keywords

  • SC-ICF: Integrated Circuit Fabrication

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