On the importance of the SrTiO3 template and the electronic contact layer for the integration of phase-pure low hysteretic Pb(Mg0.33Nb0.67)O3-PbTiO3 layers with Si

Shu Ni; Evert Houwman; Gertjan Koster; Guus Rijnders

doi:10.1007/s00339-023-06447-x

On the importance of the SrTiO₃ template and the electronic contact layer for the integration of phase-pure low hysteretic Pb(Mg_0.33Nb_0.67)O₃-PbTiO₃ layers with Si

Shu Ni, Evert Houwman, Gertjan Koster, Guus Rijnders^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

1 Citation (Scopus)

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Abstract

The rapid advent of the piezoelectric microelectromechanical systems (PiezoMEMS) field has created a tremendous demand for low hysteretic piezoelectric thin films on Si. In this work, we present the integration of epitaxial Pb(Mg_0.33Nb_0.67)O₃-PbTiO₃ (PMN-PT) thin films with Si to enable device fabrication using state of the art methods. With optimized buffer layers and electronic contacts, high-quality low hysteretic PMN-PT thin films are integrated with Si, which is a significant stride towards employing PMN-PT thin film for PiezoMEMS devices. It is found that the processing of the necessary SrTiO₃ buffer layer is crucial to achieve the growth of phase-pure perovskite PMN-PT layers on Si. Furthermore, we propose the engineering of the electronic contact for the PMN-PT-on-Si capacitors to obtain low hysteretic polarization and displacement responses.

Original language	English
Article number	275
Journal	Applied physics A: Materials science and processing
Volume	129
Issue number	4
DOIs	https://doi.org/10.1007/s00339-023-06447-x
Publication status	Published - Apr 2023

Keywords

Perovskites oxides on Si
Phase-pure
PMN-PT thin films
SrTiO buffer layer
UT-Hybrid-D

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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Cite this

@article{35b60e6984064f769eb71fa7b4194531,

title = "On the importance of the SrTiO3 template and the electronic contact layer for the integration of phase-pure low hysteretic Pb(Mg0.33Nb0.67)O3-PbTiO3 layers with Si",

abstract = "The rapid advent of the piezoelectric microelectromechanical systems (PiezoMEMS) field has created a tremendous demand for low hysteretic piezoelectric thin films on Si. In this work, we present the integration of epitaxial Pb(Mg0.33Nb0.67)O3-PbTiO3 (PMN-PT) thin films with Si to enable device fabrication using state of the art methods. With optimized buffer layers and electronic contacts, high-quality low hysteretic PMN-PT thin films are integrated with Si, which is a significant stride towards employing PMN-PT thin film for PiezoMEMS devices. It is found that the processing of the necessary SrTiO3 buffer layer is crucial to achieve the growth of phase-pure perovskite PMN-PT layers on Si. Furthermore, we propose the engineering of the electronic contact for the PMN-PT-on-Si capacitors to obtain low hysteretic polarization and displacement responses.",

keywords = "Perovskites oxides on Si, Phase-pure, PMN-PT thin films, SrTiO buffer layer, UT-Hybrid-D",

author = "Shu Ni and Evert Houwman and Gertjan Koster and Guus Rijnders",

note = "Funding Information: Financial support for this work was provided by the project PiezoMEMS for FLOW +, which is part of The Netherlands Organization for Scientific Research (NWO). Publisher Copyright: {\textcopyright} 2023, The Author(s).",

year = "2023",

month = apr,

doi = "10.1007/s00339-023-06447-x",

language = "English",

volume = "129",

journal = "Applied physics A: Materials science and processing",

issn = "0947-8396",

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}

On the importance of the SrTiO₃ template and the electronic contact layer for the integration of phase-pure low hysteretic Pb(Mg_0.33Nb_0.67)O₃-PbTiO₃ layers with Si. / Ni, Shu; Houwman, Evert ; Koster, Gertjan et al.
In: Applied physics A: Materials science and processing, Vol. 129, No. 4, 275, 04.2023.

Research output: Contribution to journal › Article › Academic › peer-review

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AU - Ni, Shu

AU - Houwman, Evert

AU - Koster, Gertjan

AU - Rijnders, Guus

N1 - Funding Information: Financial support for this work was provided by the project PiezoMEMS for FLOW +, which is part of The Netherlands Organization for Scientific Research (NWO). Publisher Copyright: © 2023, The Author(s).

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N2 - The rapid advent of the piezoelectric microelectromechanical systems (PiezoMEMS) field has created a tremendous demand for low hysteretic piezoelectric thin films on Si. In this work, we present the integration of epitaxial Pb(Mg0.33Nb0.67)O3-PbTiO3 (PMN-PT) thin films with Si to enable device fabrication using state of the art methods. With optimized buffer layers and electronic contacts, high-quality low hysteretic PMN-PT thin films are integrated with Si, which is a significant stride towards employing PMN-PT thin film for PiezoMEMS devices. It is found that the processing of the necessary SrTiO3 buffer layer is crucial to achieve the growth of phase-pure perovskite PMN-PT layers on Si. Furthermore, we propose the engineering of the electronic contact for the PMN-PT-on-Si capacitors to obtain low hysteretic polarization and displacement responses.

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