On the kinetics of platinum silicide formation

Research output: Contribution to journalArticleAcademicpeer-review

11 Citations (Scopus)

Abstract

In this work, the kinetics of platinum silicide formation for thin Pt films _50 nm_ on monocrystalline _100_ silicon is investigated via in situ resistance measurements under isothermal _197–275 °C_conditions. For Pt2Si diffusion limited growth was observed. For PtSi formation, however, no linear relation between silicide thickness and _t was found. PtSi growth over time could be described using the Avrami relation rendering Avrami exponent n=1.4_0.1. Additionally, an effective activation energy EA=1.7_0.1 eV was derived using the Avrami k values. The findings are important for obtaining well defined silicide films and silicide-to-silicon contacts. © 2011 American Institute of Physics.
Original languageUndefined
Pages (from-to)082102
Number of pages3
JournalApplied physics letters
Volume98
Issue number8
DOIs
Publication statusPublished - 22 Feb 2011

Keywords

  • isothermal transformations
  • platinum compounds
  • reaction rate constants
  • EWI-19703
  • SC-RID: Radiation Imaging detectors
  • electric resistance measurement
  • IR-76147
  • Diffusion
  • MIS structures
  • Electrical contacts
  • METIS-277566

Cite this

@article{210d76bd35b14e0ca35f3b16a1ef7f63,
title = "On the kinetics of platinum silicide formation",
abstract = "In this work, the kinetics of platinum silicide formation for thin Pt films _50 nm_ on monocrystalline _100_ silicon is investigated via in situ resistance measurements under isothermal _197–275 °C_conditions. For Pt2Si diffusion limited growth was observed. For PtSi formation, however, no linear relation between silicide thickness and _t was found. PtSi growth over time could be described using the Avrami relation rendering Avrami exponent n=1.4_0.1. Additionally, an effective activation energy EA=1.7_0.1 eV was derived using the Avrami k values. The findings are important for obtaining well defined silicide films and silicide-to-silicon contacts. {\circledC} 2011 American Institute of Physics.",
keywords = "isothermal transformations, platinum compounds, reaction rate constants, EWI-19703, SC-RID: Radiation Imaging detectors, electric resistance measurement, IR-76147, Diffusion, MIS structures, Electrical contacts, METIS-277566",
author = "Faber, {Erik Jouwert} and Wolters, {Robertus A.M.} and Jurriaan Schmitz",
note = "10.1063/1.3556563",
year = "2011",
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doi = "10.1063/1.3556563",
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volume = "98",
pages = "082102",
journal = "Applied physics letters",
issn = "0003-6951",
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On the kinetics of platinum silicide formation. / Faber, Erik Jouwert; Wolters, Robertus A.M.; Schmitz, Jurriaan.

In: Applied physics letters, Vol. 98, No. 8, 22.02.2011, p. 082102.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - On the kinetics of platinum silicide formation

AU - Faber, Erik Jouwert

AU - Wolters, Robertus A.M.

AU - Schmitz, Jurriaan

N1 - 10.1063/1.3556563

PY - 2011/2/22

Y1 - 2011/2/22

N2 - In this work, the kinetics of platinum silicide formation for thin Pt films _50 nm_ on monocrystalline _100_ silicon is investigated via in situ resistance measurements under isothermal _197–275 °C_conditions. For Pt2Si diffusion limited growth was observed. For PtSi formation, however, no linear relation between silicide thickness and _t was found. PtSi growth over time could be described using the Avrami relation rendering Avrami exponent n=1.4_0.1. Additionally, an effective activation energy EA=1.7_0.1 eV was derived using the Avrami k values. The findings are important for obtaining well defined silicide films and silicide-to-silicon contacts. © 2011 American Institute of Physics.

AB - In this work, the kinetics of platinum silicide formation for thin Pt films _50 nm_ on monocrystalline _100_ silicon is investigated via in situ resistance measurements under isothermal _197–275 °C_conditions. For Pt2Si diffusion limited growth was observed. For PtSi formation, however, no linear relation between silicide thickness and _t was found. PtSi growth over time could be described using the Avrami relation rendering Avrami exponent n=1.4_0.1. Additionally, an effective activation energy EA=1.7_0.1 eV was derived using the Avrami k values. The findings are important for obtaining well defined silicide films and silicide-to-silicon contacts. © 2011 American Institute of Physics.

KW - isothermal transformations

KW - platinum compounds

KW - reaction rate constants

KW - EWI-19703

KW - SC-RID: Radiation Imaging detectors

KW - electric resistance measurement

KW - IR-76147

KW - Diffusion

KW - MIS structures

KW - Electrical contacts

KW - METIS-277566

U2 - 10.1063/1.3556563

DO - 10.1063/1.3556563

M3 - Article

VL - 98

SP - 082102

JO - Applied physics letters

JF - Applied physics letters

SN - 0003-6951

IS - 8

ER -