On the kinetics of platinum silicide formation

    Research output: Contribution to journalArticleAcademicpeer-review

    11 Citations (Scopus)

    Abstract

    In this work, the kinetics of platinum silicide formation for thin Pt films _50 nm_ on monocrystalline _100_ silicon is investigated via in situ resistance measurements under isothermal _197–275 °C_conditions. For Pt2Si diffusion limited growth was observed. For PtSi formation, however, no linear relation between silicide thickness and _t was found. PtSi growth over time could be described using the Avrami relation rendering Avrami exponent n=1.4_0.1. Additionally, an effective activation energy EA=1.7_0.1 eV was derived using the Avrami k values. The findings are important for obtaining well defined silicide films and silicide-to-silicon contacts. © 2011 American Institute of Physics.
    Original languageUndefined
    Pages (from-to)082102
    Number of pages3
    JournalApplied physics letters
    Volume98
    Issue number8
    DOIs
    Publication statusPublished - 22 Feb 2011

    Keywords

    • isothermal transformations
    • platinum compounds
    • reaction rate constants
    • EWI-19703
    • SC-RID: Radiation Imaging detectors
    • electric resistance measurement
    • IR-76147
    • Diffusion
    • MIS structures
    • Electrical contacts
    • METIS-277566

    Cite this

    @article{210d76bd35b14e0ca35f3b16a1ef7f63,
    title = "On the kinetics of platinum silicide formation",
    abstract = "In this work, the kinetics of platinum silicide formation for thin Pt films _50 nm_ on monocrystalline _100_ silicon is investigated via in situ resistance measurements under isothermal _197–275 °C_conditions. For Pt2Si diffusion limited growth was observed. For PtSi formation, however, no linear relation between silicide thickness and _t was found. PtSi growth over time could be described using the Avrami relation rendering Avrami exponent n=1.4_0.1. Additionally, an effective activation energy EA=1.7_0.1 eV was derived using the Avrami k values. The findings are important for obtaining well defined silicide films and silicide-to-silicon contacts. {\circledC} 2011 American Institute of Physics.",
    keywords = "isothermal transformations, platinum compounds, reaction rate constants, EWI-19703, SC-RID: Radiation Imaging detectors, electric resistance measurement, IR-76147, Diffusion, MIS structures, Electrical contacts, METIS-277566",
    author = "Faber, {Erik Jouwert} and Wolters, {Robertus A.M.} and Jurriaan Schmitz",
    note = "10.1063/1.3556563",
    year = "2011",
    month = "2",
    day = "22",
    doi = "10.1063/1.3556563",
    language = "Undefined",
    volume = "98",
    pages = "082102",
    journal = "Applied physics letters",
    issn = "0003-6951",
    publisher = "American Institute of Physics",
    number = "8",

    }

    On the kinetics of platinum silicide formation. / Faber, Erik Jouwert; Wolters, Robertus A.M.; Schmitz, Jurriaan.

    In: Applied physics letters, Vol. 98, No. 8, 22.02.2011, p. 082102.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - On the kinetics of platinum silicide formation

    AU - Faber, Erik Jouwert

    AU - Wolters, Robertus A.M.

    AU - Schmitz, Jurriaan

    N1 - 10.1063/1.3556563

    PY - 2011/2/22

    Y1 - 2011/2/22

    N2 - In this work, the kinetics of platinum silicide formation for thin Pt films _50 nm_ on monocrystalline _100_ silicon is investigated via in situ resistance measurements under isothermal _197–275 °C_conditions. For Pt2Si diffusion limited growth was observed. For PtSi formation, however, no linear relation between silicide thickness and _t was found. PtSi growth over time could be described using the Avrami relation rendering Avrami exponent n=1.4_0.1. Additionally, an effective activation energy EA=1.7_0.1 eV was derived using the Avrami k values. The findings are important for obtaining well defined silicide films and silicide-to-silicon contacts. © 2011 American Institute of Physics.

    AB - In this work, the kinetics of platinum silicide formation for thin Pt films _50 nm_ on monocrystalline _100_ silicon is investigated via in situ resistance measurements under isothermal _197–275 °C_conditions. For Pt2Si diffusion limited growth was observed. For PtSi formation, however, no linear relation between silicide thickness and _t was found. PtSi growth over time could be described using the Avrami relation rendering Avrami exponent n=1.4_0.1. Additionally, an effective activation energy EA=1.7_0.1 eV was derived using the Avrami k values. The findings are important for obtaining well defined silicide films and silicide-to-silicon contacts. © 2011 American Institute of Physics.

    KW - isothermal transformations

    KW - platinum compounds

    KW - reaction rate constants

    KW - EWI-19703

    KW - SC-RID: Radiation Imaging detectors

    KW - electric resistance measurement

    KW - IR-76147

    KW - Diffusion

    KW - MIS structures

    KW - Electrical contacts

    KW - METIS-277566

    U2 - 10.1063/1.3556563

    DO - 10.1063/1.3556563

    M3 - Article

    VL - 98

    SP - 082102

    JO - Applied physics letters

    JF - Applied physics letters

    SN - 0003-6951

    IS - 8

    ER -