On the kinetics of platinum silicide formation

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    Abstract

    In this work, the kinetics of platinum silicide formation for thin Pt films _50 nm_ on monocrystalline _100_ silicon is investigated via in situ resistance measurements under isothermal _197–275 °C_conditions. For Pt2Si diffusion limited growth was observed. For PtSi formation, however, no linear relation between silicide thickness and _t was found. PtSi growth over time could be described using the Avrami relation rendering Avrami exponent n=1.4_0.1. Additionally, an effective activation energy EA=1.7_0.1 eV was derived using the Avrami k values. The findings are important for obtaining well defined silicide films and silicide-to-silicon contacts. © 2011 American Institute of Physics.
    Original languageUndefined
    Pages (from-to)082102
    Number of pages3
    JournalApplied physics letters
    Volume98
    Issue number8
    DOIs
    Publication statusPublished - 22 Feb 2011

    Keywords

    • isothermal transformations
    • platinum compounds
    • reaction rate constants
    • EWI-19703
    • SC-RID: Radiation Imaging detectors
    • electric resistance measurement
    • IR-76147
    • Diffusion
    • MIS structures
    • Electrical contacts
    • METIS-277566

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