In this work, Metal-insulator-metal (MIM) capacitor structures are fabricated in a technology using TiN as electrode material. The electrical characterization revealed devices with small and large leakage currents. Scanning Electron Microscopy (SEM) inspection showed a correlation between high leakage currents and large roughness in the dielectric layer of the capacitor. Cross-section of leaky capacitors by means of a Focussed Ion Beam (FIB) showed a rough edge of the bottom electrode and the presence of particles leading to a rough dielectric layer. These artefacts are the result of improper wet chemical etching of the TiN layer. It is shown, high leakage currents and improper etching of the TiN layer are correlated.
|Title of host publication||Proceedings of STW.ICT Conference 2010|
|Place of Publication||Utrecht|
|Number of pages||4|
|Publication status||Published - 18 Nov 2010|
|Event||2010 STW.ICT Conference on Research in Information and Communication Technology - Veldhoven, Netherlands|
Duration: 18 Nov 2010 → 19 Nov 2010
|Publisher||Technology Foundation STW|
|Conference||2010 STW.ICT Conference on Research in Information and Communication Technology|
|Abbreviated title||STW.ICT 2010|
|Period||18/11/10 → 19/11/10|
- Wet chemical etching
- Metal-insulator-metal (MIM) capacitor
- Titanium Nitride
Groenland, A. W., Wolters, R. A. M., Kovalgin, A. Y., & Schmitz, J. (2010). On the leakage problem of MIM capacitors due to improper etching of titanium nitride. In Proceedings of STW.ICT Conference 2010 (pp. 89-92). Utrecht: STW.