On the leakage problem of MIM capacitors due to improper etching of titanium nitride

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    In this work, Metal-insulator-metal (MIM) capacitor structures are fabricated in a technology using TiN as electrode material. The electrical characterization revealed devices with small and large leakage currents. Scanning Electron Microscopy (SEM) inspection showed a correlation between high leakage currents and large roughness in the dielectric layer of the capacitor. Cross-section of leaky capacitors by means of a Focussed Ion Beam (FIB) showed a rough edge of the bottom electrode and the presence of particles leading to a rough dielectric layer. These artefacts are the result of improper wet chemical etching of the TiN layer. It is shown, high leakage currents and improper etching of the TiN layer are correlated.
    Original languageUndefined
    Title of host publicationProceedings of STW.ICT Conference 2010
    Place of PublicationUtrecht
    Number of pages4
    ISBN (Print)978-90-73461-67-3
    Publication statusPublished - 18 Nov 2010
    Event2010 STW.ICT Conference on Research in Information and Communication Technology - Veldhoven, Netherlands
    Duration: 18 Nov 201019 Nov 2010

    Publication series

    PublisherTechnology Foundation STW


    Conference2010 STW.ICT Conference on Research in Information and Communication Technology
    Abbreviated titleSTW.ICT 2010
    Internet address


    • METIS-276391
    • IR-76310
    • EWI-19752
    • Wet chemical etching
    • Metal-insulator-metal (MIM) capacitor
    • Titanium Nitride

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