On the leakage problem of MIM capacitors due to improper etching of titanium nitride

A.W. Groenland; Robertus A.M. Wolters; Alexeij Y. Kovalgin; Jurriaan Schmitz

On the leakage problem of MIM capacitors due to improper etching of titanium nitride

A.W. Groenland, Robertus A.M. Wolters, Alexeij Y. Kovalgin, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

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Abstract

In this work, Metal-insulator-metal (MIM) capacitor structures are fabricated in a technology using TiN as electrode material. The electrical characterization revealed devices with small and large leakage currents. Scanning Electron Microscopy (SEM) inspection showed a correlation between high leakage currents and large roughness in the dielectric layer of the capacitor. Cross-section of leaky capacitors by means of a Focussed Ion Beam (FIB) showed a rough edge of the bottom electrode and the presence of particles leading to a rough dielectric layer. These artefacts are the result of improper wet chemical etching of the TiN layer. It is shown, high leakage currents and improper etching of the TiN layer are correlated.

Original language	Undefined
Title of host publication	Proceedings of STW.ICT Conference 2010
Place of Publication	Utrecht
Publisher	STW
Pages	89-92
Number of pages	4
ISBN (Print)	978-90-73461-67-3
Publication status	Published - 18 Nov 2010
Event	2010 STW.ICT Conference on Research in Information and Communication Technology - Veldhoven, Netherlands Duration: 18 Nov 2010 → 19 Nov 2010 https://www.elis.ugent.be/en/project/og/cfp/2558

Publication series

Name
Publisher	Technology Foundation STW

Conference

Conference	2010 STW.ICT Conference on Research in Information and Communication Technology
Abbreviated title	STW.ICT 2010
Country	Netherlands
City	Veldhoven
Period	18/11/10 → 19/11/10
Internet address	https://www.elis.ugent.be/en/project/og/cfp/2558

Keywords

METIS-276391
IR-76310
EWI-19752
Wet chemical etching
Metal-insulator-metal (MIM) capacitor
Titanium Nitride

Access to Document

groenland
open

http://eprints.eemcs.utwente.nl/secure2/19752/01/groenland.pdf

Cite this

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title = "On the leakage problem of MIM capacitors due to improper etching of titanium nitride",

abstract = "In this work, Metal-insulator-metal (MIM) capacitor structures are fabricated in a technology using TiN as electrode material. The electrical characterization revealed devices with small and large leakage currents. Scanning Electron Microscopy (SEM) inspection showed a correlation between high leakage currents and large roughness in the dielectric layer of the capacitor. Cross-section of leaky capacitors by means of a Focussed Ion Beam (FIB) showed a rough edge of the bottom electrode and the presence of particles leading to a rough dielectric layer. These artefacts are the result of improper wet chemical etching of the TiN layer. It is shown, high leakage currents and improper etching of the TiN layer are correlated.",

keywords = "METIS-276391, IR-76310, EWI-19752, Wet chemical etching, Metal-insulator-metal (MIM) capacitor, Titanium Nitride",

author = "A.W. Groenland and Wolters, {Robertus A.M.} and Kovalgin, {Alexeij Y.} and Jurriaan Schmitz",

year = "2010",

month = nov,

day = "18",

language = "Undefined",

isbn = "978-90-73461-67-3",

publisher = "STW",

pages = "89--92",

booktitle = "Proceedings of STW.ICT Conference 2010",

note = "null ; Conference date: 18-11-2010 Through 19-11-2010",

url = "https://www.elis.ugent.be/en/project/og/cfp/2558",

}

Groenland, AW, Wolters, RAM , Kovalgin, AY & Schmitz, J 2010, On the leakage problem of MIM capacitors due to improper etching of titanium nitride. in Proceedings of STW.ICT Conference 2010. STW, Utrecht, pp. 89-92, 2010 STW.ICT Conference on Research in Information and Communication Technology, Veldhoven, Netherlands, 18/11/10. <http://eprints.eemcs.utwente.nl/secure2/19752/01/groenland.pdf>

TY - GEN

T1 - On the leakage problem of MIM capacitors due to improper etching of titanium nitride

AU - Groenland, A.W.

AU - Wolters, Robertus A.M.

AU - Kovalgin, Alexeij Y.

AU - Schmitz, Jurriaan

PY - 2010/11/18

Y1 - 2010/11/18

N2 - In this work, Metal-insulator-metal (MIM) capacitor structures are fabricated in a technology using TiN as electrode material. The electrical characterization revealed devices with small and large leakage currents. Scanning Electron Microscopy (SEM) inspection showed a correlation between high leakage currents and large roughness in the dielectric layer of the capacitor. Cross-section of leaky capacitors by means of a Focussed Ion Beam (FIB) showed a rough edge of the bottom electrode and the presence of particles leading to a rough dielectric layer. These artefacts are the result of improper wet chemical etching of the TiN layer. It is shown, high leakage currents and improper etching of the TiN layer are correlated.

AB - In this work, Metal-insulator-metal (MIM) capacitor structures are fabricated in a technology using TiN as electrode material. The electrical characterization revealed devices with small and large leakage currents. Scanning Electron Microscopy (SEM) inspection showed a correlation between high leakage currents and large roughness in the dielectric layer of the capacitor. Cross-section of leaky capacitors by means of a Focussed Ion Beam (FIB) showed a rough edge of the bottom electrode and the presence of particles leading to a rough dielectric layer. These artefacts are the result of improper wet chemical etching of the TiN layer. It is shown, high leakage currents and improper etching of the TiN layer are correlated.

KW - METIS-276391

KW - IR-76310

KW - EWI-19752

KW - Wet chemical etching

KW - Metal-insulator-metal (MIM) capacitor

KW - Titanium Nitride

M3 - Conference contribution

SN - 978-90-73461-67-3

SP - 89

EP - 92

BT - Proceedings of STW.ICT Conference 2010

PB - STW

CY - Utrecht

Y2 - 18 November 2010 through 19 November 2010

ER -