On the mechanisms governing aluminum-mediated solid-phase epitaxy of silicon

Yann Civale, Guglielmo Vastola, Lis K. Nanver*, Rani Mary-Joy, Jae Ryoung Kim

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

9 Citations (Scopus)
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Abstract

Mechanisms governing the aluminum-mediated solid-phase epitaxy of Si on patterned crystalline Si substrates have been identified by studying the deposited material as a function of growth conditions when varying parameters such as temperature, growth time, and layer-stack properties. Early growth stages can be discerned as first formation of "free" Si at the Al/α-Si interface, then diffusion of Si along the Al grain boundaries, nucleation at the Si substrate surface, nuclei rearrangement, and finally crystal growth. The acquired understanding is applied to control the selectivity and completeness of single-crystal growth in various sizes of contact windows to the Si substrate.

Original languageEnglish
Pages (from-to)2052-2062
Number of pages11
JournalJournal of electronic materials
Volume38
Issue number10
Early online date7 Jul 2009
DOIs
Publication statusPublished - Oct 2009
Externally publishedYes

Keywords

  • Aluminum doping
  • Aluminum-induced crystallization
  • Layer exchange mechanisms
  • Low-temperature doping
  • P -n diodes
  • Silicon crystal growth
  • Silicon epitaxy
  • Solid-phase epitaxy

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