On the modelling and optimisation of a novel Schottky based silicon rectifier

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    Abstract

    The charge plasma (CP) diode is a novel silicon rectifier using Schottky barriers, to circumvent the requirement for doping and related problems when small device dimensions are used. We present a model for the DC current voltage characteristics and verify this using device simulations. The model revealed an exponential dependence of the current on the metal work functions. And approximate linear dependence on the device geometry. The model is used to optimize the device performance. We show a factor 30 improvement in on/off current ratio (and hence rectification) toward 10E7 by appropriate sizing of the lateral device dimensions at given specific metal work functions.
    Original languageUndefined
    Title of host publicationProceedings of the 40th European Solid-State Device Research, Essderc 2010
    Place of PublicationUSA
    PublisherIEEE Solid-State Circuits Society
    Pages460-463
    Number of pages4
    ISBN (Print)978-1-4244-6660-3
    DOIs
    Publication statusPublished - 13 Sep 2010
    Event40th European Solid State Device Research Conference, ESSDERC 2010 - Hotel Barcelo Renacimiento, Sevilla, Spain
    Duration: 13 Sep 201017 Sep 2010
    Conference number: 40

    Publication series

    Name
    PublisherIEEE Solid-State Circuits Society

    Conference

    Conference40th European Solid State Device Research Conference, ESSDERC 2010
    Abbreviated titleESSDERC
    CountrySpain
    CitySevilla
    Period13/09/1017/09/10

    Keywords

    • METIS-276097
    • EWI-18466
    • IR-75631

    Cite this

    van Hemert, T., Hueting, R. J. E., Rajasekharan, B., Salm, C., & Schmitz, J. (2010). On the modelling and optimisation of a novel Schottky based silicon rectifier. In Proceedings of the 40th European Solid-State Device Research, Essderc 2010 (pp. 460-463). USA: IEEE Solid-State Circuits Society. https://doi.org/10.1109/ESSDERC.2010.5618177