On the nature of ionic liquid gating of La2−xSrxCuO4

Hasan Atesci, Wouter Gelling, Francesco Coneri, Hans Hilgenkamp, Jan M. van Ruitenbeek (Corresponding Author)

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Abstract

Ionic liquids have recently been used as means of modulating the charge carrier properties of cuprates. The mechanism behind it, however, is still a matter of debate. In this paper we report experiments on ionic liquid gated ultrathin La2−xSrxCuO4 films. Our results show that the electrostatic part of gating has limited influence in the conductance of the cuprate in the gate voltage range of 0 to −2 V. A non-electrostatic mechanism takes over for gate voltages below −2 V. This mechanism most likely changes the oxygen concentration of the film. The results presented are in line with previous X-ray based studies on ionic liquid gating induced oxygenation of the cuprate materials YBa2Cu3O7−x and La2−xSrxCuO4.

Original languageEnglish
Article number566
JournalInternational journal of molecular sciences
Volume19
Issue number2
DOIs
Publication statusPublished - 13 Feb 2018

Keywords

  • Electric double layer
  • Ionic liquid
  • LaSrCuO
  • Oxygenation

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