On the nature of ionic liquid gating of La2−xSrxCuO4

Hasan Atesci, Wouter Gelling, Francesco Coneri, Hans Hilgenkamp, Jan M. van Ruitenbeek (Corresponding Author)

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Abstract

Ionic liquids have recently been used as means of modulating the charge carrier properties of cuprates. The mechanism behind it, however, is still a matter of debate. In this paper we report experiments on ionic liquid gated ultrathin La2−xSrxCuO4 films. Our results show that the electrostatic part of gating has limited influence in the conductance of the cuprate in the gate voltage range of 0 to −2 V. A non-electrostatic mechanism takes over for gate voltages below −2 V. This mechanism most likely changes the oxygen concentration of the film. The results presented are in line with previous X-ray based studies on ionic liquid gating induced oxygenation of the cuprate materials YBa2Cu3O7−x and La2−xSrxCuO4.

Original languageEnglish
Article number566
JournalInternational journal of molecular sciences
Volume19
Issue number2
DOIs
Publication statusPublished - 13 Feb 2018

Fingerprint

Ionic Liquids
Ionic liquids
cuprates
liquids
Oxygenation
Ultrathin films
oxygenation
Liquid films
Electric potential
electric potential
Charge carriers
Static Electricity
charge carriers
Electrostatics
X-Rays
electrostatics
Oxygen
X rays
oxygen
x rays

Keywords

  • Electric double layer
  • Ionic liquid
  • LaSrCuO
  • Oxygenation

Cite this

Atesci, Hasan ; Gelling, Wouter ; Coneri, Francesco ; Hilgenkamp, Hans ; van Ruitenbeek, Jan M. / On the nature of ionic liquid gating of La2−xSrxCuO4. In: International journal of molecular sciences. 2018 ; Vol. 19, No. 2.
@article{ca70c0d58fac4cf491e7b5e6e950ce69,
title = "On the nature of ionic liquid gating of La2−xSrxCuO4",
abstract = "Ionic liquids have recently been used as means of modulating the charge carrier properties of cuprates. The mechanism behind it, however, is still a matter of debate. In this paper we report experiments on ionic liquid gated ultrathin La2−xSrxCuO4 films. Our results show that the electrostatic part of gating has limited influence in the conductance of the cuprate in the gate voltage range of 0 to −2 V. A non-electrostatic mechanism takes over for gate voltages below −2 V. This mechanism most likely changes the oxygen concentration of the film. The results presented are in line with previous X-ray based studies on ionic liquid gating induced oxygenation of the cuprate materials YBa2Cu3O7−x and La2−xSrxCuO4.",
keywords = "Electric double layer, Ionic liquid, LaSrCuO, Oxygenation",
author = "Hasan Atesci and Wouter Gelling and Francesco Coneri and Hans Hilgenkamp and {van Ruitenbeek}, {Jan M.}",
note = "This article belongs to the Special Issue Ionic Liquids 2018 and Selected Papers from ILMAT IV",
year = "2018",
month = "2",
day = "13",
doi = "10.3390/ijms19020566",
language = "English",
volume = "19",
journal = "International journal of molecular sciences",
issn = "1661-6596",
publisher = "Multidisciplinary Digital Publishing Institute",
number = "2",

}

On the nature of ionic liquid gating of La2−xSrxCuO4. / Atesci, Hasan; Gelling, Wouter; Coneri, Francesco; Hilgenkamp, Hans; van Ruitenbeek, Jan M. (Corresponding Author).

In: International journal of molecular sciences, Vol. 19, No. 2, 566, 13.02.2018.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - On the nature of ionic liquid gating of La2−xSrxCuO4

AU - Atesci, Hasan

AU - Gelling, Wouter

AU - Coneri, Francesco

AU - Hilgenkamp, Hans

AU - van Ruitenbeek, Jan M.

N1 - This article belongs to the Special Issue Ionic Liquids 2018 and Selected Papers from ILMAT IV

PY - 2018/2/13

Y1 - 2018/2/13

N2 - Ionic liquids have recently been used as means of modulating the charge carrier properties of cuprates. The mechanism behind it, however, is still a matter of debate. In this paper we report experiments on ionic liquid gated ultrathin La2−xSrxCuO4 films. Our results show that the electrostatic part of gating has limited influence in the conductance of the cuprate in the gate voltage range of 0 to −2 V. A non-electrostatic mechanism takes over for gate voltages below −2 V. This mechanism most likely changes the oxygen concentration of the film. The results presented are in line with previous X-ray based studies on ionic liquid gating induced oxygenation of the cuprate materials YBa2Cu3O7−x and La2−xSrxCuO4.

AB - Ionic liquids have recently been used as means of modulating the charge carrier properties of cuprates. The mechanism behind it, however, is still a matter of debate. In this paper we report experiments on ionic liquid gated ultrathin La2−xSrxCuO4 films. Our results show that the electrostatic part of gating has limited influence in the conductance of the cuprate in the gate voltage range of 0 to −2 V. A non-electrostatic mechanism takes over for gate voltages below −2 V. This mechanism most likely changes the oxygen concentration of the film. The results presented are in line with previous X-ray based studies on ionic liquid gating induced oxygenation of the cuprate materials YBa2Cu3O7−x and La2−xSrxCuO4.

KW - Electric double layer

KW - Ionic liquid

KW - LaSrCuO

KW - Oxygenation

UR - http://www.scopus.com/inward/record.url?scp=85042228587&partnerID=8YFLogxK

U2 - 10.3390/ijms19020566

DO - 10.3390/ijms19020566

M3 - Article

AN - SCOPUS:85042228587

VL - 19

JO - International journal of molecular sciences

JF - International journal of molecular sciences

SN - 1661-6596

IS - 2

M1 - 566

ER -