On the nature of ionic liquid gating of La2−xSrxCuO4

Hasan Atesci; Wouter Gelling; Francesco Coneri; Hans Hilgenkamp; Jan M. van Ruitenbeek

doi:10.3390/ijms19020566

On the nature of ionic liquid gating of La_2−xSr_xCuO₄

Hasan Atesci, Wouter Gelling, Francesco Coneri, Hans Hilgenkamp, Jan M. van Ruitenbeek (Corresponding Author)

Interfaces and Correlated Electron Systems

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Abstract

Ionic liquids have recently been used as means of modulating the charge carrier properties of cuprates. The mechanism behind it, however, is still a matter of debate. In this paper we report experiments on ionic liquid gated ultrathin La_2−xSr_xCuO₄ films. Our results show that the electrostatic part of gating has limited influence in the conductance of the cuprate in the gate voltage range of 0 to −2 V. A non-electrostatic mechanism takes over for gate voltages below −2 V. This mechanism most likely changes the oxygen concentration of the film. The results presented are in line with previous X-ray based studies on ionic liquid gating induced oxygenation of the cuprate materials YBa₂Cu₃O_7−x and La_2−xSr_xCuO₄.

Original language	English
Article number	566
Journal	International journal of molecular sciences
Volume	19
Issue number	2
DOIs	https://doi.org/10.3390/ijms19020566
Publication status	Published - 13 Feb 2018

Keywords

Electric double layer
Ionic liquid
LaSrCuO
Oxygenation

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title = "On the nature of ionic liquid gating of La2−xSrxCuO4",

abstract = "Ionic liquids have recently been used as means of modulating the charge carrier properties of cuprates. The mechanism behind it, however, is still a matter of debate. In this paper we report experiments on ionic liquid gated ultrathin La2−xSrxCuO4 films. Our results show that the electrostatic part of gating has limited influence in the conductance of the cuprate in the gate voltage range of 0 to −2 V. A non-electrostatic mechanism takes over for gate voltages below −2 V. This mechanism most likely changes the oxygen concentration of the film. The results presented are in line with previous X-ray based studies on ionic liquid gating induced oxygenation of the cuprate materials YBa2Cu3O7−x and La2−xSrxCuO4.",

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AU - van Ruitenbeek, Jan M.

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AB - Ionic liquids have recently been used as means of modulating the charge carrier properties of cuprates. The mechanism behind it, however, is still a matter of debate. In this paper we report experiments on ionic liquid gated ultrathin La2−xSrxCuO4 films. Our results show that the electrostatic part of gating has limited influence in the conductance of the cuprate in the gate voltage range of 0 to −2 V. A non-electrostatic mechanism takes over for gate voltages below −2 V. This mechanism most likely changes the oxygen concentration of the film. The results presented are in line with previous X-ray based studies on ionic liquid gating induced oxygenation of the cuprate materials YBa2Cu3O7−x and La2−xSrxCuO4.

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On the nature of ionic liquid gating of La_2−xSr_xCuO₄

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Keywords

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