On the optimisation of SiGe-base bipolar transistors

R. J.E. Hueting; J. W. Slotboom; A. Pruijmboom; W. B. De Boer; C. E. Timmering; N. Cowern

On the optimisation of SiGe-base bipolar transistors

R. J.E. Hueting^*, J. W. Slotboom, A. Pruijmboom, W. B. De Boer, C. E. Timmering, N. Cowern

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

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Abstract

Extensive computer simulations of NPN SiGe-base bipolar transistors were performed to examine the effect of the Ge profile in the electrical characteristics. It is shown that extra charge storage in the emitter-base (E-B) junction, caused by the Ge profile, affects the device performance considerably. In addition, it is shown that an abrupt Ge profile in the middle of the base region is optimal for a given critical layer thickness of approximately 600A.

Original language	English
Title of host publication	ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference
Editors	Henk C. de Graaff, Henk C. de Graaff, Herma van Kranenburg
Publisher	IEEE
Pages	59-62
Number of pages	4
ISBN (Electronic)	286332182X
ISBN (Print)	9782863321829
Publication status	Published - 1 Jan 1995
Externally published	Yes
Event	25th European Solid State Device Research Conference, ESSDERC 1995 - The Hague, Netherlands Duration: 25 Sept 1995 → 27 Sept 1995 Conference number: 25

Conference

Conference	25th European Solid State Device Research Conference, ESSDERC 1995
Abbreviated title	ESSDERC
Country/Territory	Netherlands
City	The Hague
Period	25/09/95 → 27/09/95

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optimisationFinal published version, 336 KB

Cite this

@inproceedings{00de1f93deaa4d66ba1eac6dd5e30b4a,

title = "On the optimisation of SiGe-base bipolar transistors",

abstract = "Extensive computer simulations of NPN SiGe-base bipolar transistors were performed to examine the effect of the Ge profile in the electrical characteristics. It is shown that extra charge storage in the emitter-base (E-B) junction, caused by the Ge profile, affects the device performance considerably. In addition, it is shown that an abrupt Ge profile in the middle of the base region is optimal for a given critical layer thickness of approximately 600A.",

author = "Hueting, {R. J.E.} and Slotboom, {J. W.} and A. Pruijmboom and {De Boer}, {W. B.} and Timmering, {C. E.} and N. Cowern",

year = "1995",

month = jan,

day = "1",

language = "English",

isbn = "9782863321829",

pages = "59--62",

editor = "{de Graaff}, {Henk C.} and {de Graaff}, {Henk C.} and {van Kranenburg}, Herma",

booktitle = "ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference",

publisher = "IEEE",

address = "United States",

note = "25th European Solid State Device Research Conference, ESSDERC 1995, ESSDERC ; Conference date: 25-09-1995 Through 27-09-1995",

}

Hueting, RJE, Slotboom, JW, Pruijmboom, A, De Boer, WB, Timmering, CE & Cowern, N 1995, On the optimisation of SiGe-base bipolar transistors. in HC de Graaff, HC de Graaff & H van Kranenburg (eds), ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference., 5436015, IEEE, pp. 59-62, 25th European Solid State Device Research Conference, ESSDERC 1995, The Hague, Netherlands, 25/09/95.

On the optimisation of SiGe-base bipolar transistors. / Hueting, R. J.E.; Slotboom, J. W.; Pruijmboom, A. et al.
ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference. ed. / Henk C. de Graaff; Henk C. de Graaff; Herma van Kranenburg. IEEE, 1995. p. 59-62 5436015.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - On the optimisation of SiGe-base bipolar transistors

AU - Hueting, R. J.E.

AU - Slotboom, J. W.

AU - Pruijmboom, A.

AU - De Boer, W. B.

AU - Timmering, C. E.

AU - Cowern, N.

N1 - Conference code: 25

PY - 1995/1/1

Y1 - 1995/1/1

N2 - Extensive computer simulations of NPN SiGe-base bipolar transistors were performed to examine the effect of the Ge profile in the electrical characteristics. It is shown that extra charge storage in the emitter-base (E-B) junction, caused by the Ge profile, affects the device performance considerably. In addition, it is shown that an abrupt Ge profile in the middle of the base region is optimal for a given critical layer thickness of approximately 600A.

AB - Extensive computer simulations of NPN SiGe-base bipolar transistors were performed to examine the effect of the Ge profile in the electrical characteristics. It is shown that extra charge storage in the emitter-base (E-B) junction, caused by the Ge profile, affects the device performance considerably. In addition, it is shown that an abrupt Ge profile in the middle of the base region is optimal for a given critical layer thickness of approximately 600A.

UR - http://www.scopus.com/inward/record.url?scp=84920741556&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84920741556

SN - 9782863321829

SP - 59

EP - 62

BT - ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference

A2 - de Graaff, Henk C.

A2 - van Kranenburg, Herma

PB - IEEE

T2 - 25th European Solid State Device Research Conference, ESSDERC 1995

Y2 - 25 September 1995 through 27 September 1995

ER -

On the optimisation of SiGe-base bipolar transistors

Abstract

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