On the optimisation of SiGe-base bipolar transistors

R. J.E. Hueting, J. W. Slotboom, A. Pruijmboom, W. B. De Boer, C. E. Timmering, N. Cowern

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)
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Abstract

Extensive computer simulations of NPN SiGe-base bipolar transistors were performed to examine the effect of the Ge profile in the electrical characteristics. It is shown that extra charge storage in the emitter-base (E-B) junction, caused by the Ge profile, affects the device performance considerably. In addition, it is shown that an abrupt Ge profile in the middle of the base region is optimal for a given critical layer thickness of approximately 600A.

Original languageEnglish
Title of host publicationESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference
EditorsHenk C. de Graaff, Henk C. de Graaff, Herma van Kranenburg
PublisherIEEE Computer Society
Pages59-62
Number of pages4
ISBN (Electronic)286332182X
ISBN (Print)9782863321829
Publication statusPublished - 1 Jan 1995
Externally publishedYes
Event25th European Solid State Device Research Conference, ESSDERC 1995 - The Hague, Netherlands
Duration: 25 Sep 199527 Sep 1995
Conference number: 25

Conference

Conference25th European Solid State Device Research Conference, ESSDERC 1995
Abbreviated titleESSDERC
CountryNetherlands
CityThe Hague
Period25/09/9527/09/95

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Bipolar transistors
Computer simulation

Cite this

Hueting, R. J. E., Slotboom, J. W., Pruijmboom, A., De Boer, W. B., Timmering, C. E., & Cowern, N. (1995). On the optimisation of SiGe-base bipolar transistors. In H. C. de Graaff, H. C. de Graaff, & H. van Kranenburg (Eds.), ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference (pp. 59-62). [5436015] IEEE Computer Society.
Hueting, R. J.E. ; Slotboom, J. W. ; Pruijmboom, A. ; De Boer, W. B. ; Timmering, C. E. ; Cowern, N. / On the optimisation of SiGe-base bipolar transistors. ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference. editor / Henk C. de Graaff ; Henk C. de Graaff ; Herma van Kranenburg. IEEE Computer Society, 1995. pp. 59-62
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author = "Hueting, {R. J.E.} and Slotboom, {J. W.} and A. Pruijmboom and {De Boer}, {W. B.} and Timmering, {C. E.} and N. Cowern",
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Hueting, RJE, Slotboom, JW, Pruijmboom, A, De Boer, WB, Timmering, CE & Cowern, N 1995, On the optimisation of SiGe-base bipolar transistors. in HC de Graaff, HC de Graaff & H van Kranenburg (eds), ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference., 5436015, IEEE Computer Society, pp. 59-62, 25th European Solid State Device Research Conference, ESSDERC 1995, The Hague, Netherlands, 25/09/95.

On the optimisation of SiGe-base bipolar transistors. / Hueting, R. J.E.; Slotboom, J. W.; Pruijmboom, A.; De Boer, W. B.; Timmering, C. E.; Cowern, N.

ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference. ed. / Henk C. de Graaff; Henk C. de Graaff; Herma van Kranenburg. IEEE Computer Society, 1995. p. 59-62 5436015.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Hueting RJE, Slotboom JW, Pruijmboom A, De Boer WB, Timmering CE, Cowern N. On the optimisation of SiGe-base bipolar transistors. In de Graaff HC, de Graaff HC, van Kranenburg H, editors, ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference. IEEE Computer Society. 1995. p. 59-62. 5436015