On the optimisation of SiGe-base bipolar transistors

R. J.E. Hueting*, J. W. Slotboom, A. Pruijmboom, W. B. De Boer, C. E. Timmering, N. Cowern

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)
5 Downloads (Pure)

Abstract

Extensive computer simulations of NPN SiGe-base bipolar transistors were performed to examine the effect of the Ge profile in the electrical characteristics. It is shown that extra charge storage in the emitter-base (E-B) junction, caused by the Ge profile, affects the device performance considerably. In addition, it is shown that an abrupt Ge profile in the middle of the base region is optimal for a given critical layer thickness of approximately 600A.

Original languageEnglish
Title of host publicationESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference
EditorsHenk C. de Graaff, Henk C. de Graaff, Herma van Kranenburg
PublisherIEEE Computer Society
Pages59-62
Number of pages4
ISBN (Electronic)286332182X
ISBN (Print)9782863321829
Publication statusPublished - 1 Jan 1995
Externally publishedYes
Event25th European Solid State Device Research Conference, ESSDERC 1995 - The Hague, Netherlands
Duration: 25 Sep 199527 Sep 1995
Conference number: 25

Conference

Conference25th European Solid State Device Research Conference, ESSDERC 1995
Abbreviated titleESSDERC
CountryNetherlands
CityThe Hague
Period25/09/9527/09/95

Fingerprint Dive into the research topics of 'On the optimisation of SiGe-base bipolar transistors'. Together they form a unique fingerprint.

  • Cite this

    Hueting, R. J. E., Slotboom, J. W., Pruijmboom, A., De Boer, W. B., Timmering, C. E., & Cowern, N. (1995). On the optimisation of SiGe-base bipolar transistors. In H. C. de Graaff, H. C. de Graaff, & H. van Kranenburg (Eds.), ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference (pp. 59-62). [5436015] IEEE Computer Society.