Abstract
This work presents a wide range of growth rate data of thin (1-60 nm) silicon oxides grown in an ultradiluted ambient of H2O or D2O in the temperature range 750-950
Original language | Undefined |
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Pages (from-to) | F133-F137 |
Number of pages | 5 |
Journal | Journal of the Electrochemical Society |
Volume | 152 |
Issue number | 9 |
DOIs | |
Publication status | Published - 28 Jul 2005 |
Keywords
- METIS-224516
- IR-61687
- EWI-15502