On the oxidation kinetics of silicon in ultradiluted H2O and D2O ambient

A.J. Hof, Alexeij Y. Kovalgin, P.H. Woerlee, Jurriaan Schmitz

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    2 Citations (Scopus)


    This work presents a wide range of growth rate data of thin (1-60 nm) silicon oxides grown in an ultradiluted ambient of H2O or D2O in the temperature range 750-950
    Original languageUndefined
    Pages (from-to)F133-F137
    Number of pages5
    JournalJournal of the Electrochemical Society
    Issue number9
    Publication statusPublished - 28 Jul 2005


    • METIS-224516
    • IR-61687
    • EWI-15502

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