On the oxidation kinetics of silicon in ultradiluted H2O and D2O ambient

A.J. Hof; Alexeij Y. Kovalgin; P.H. Woerlee; Jurriaan Schmitz

doi:10.1149/1.1992388

On the oxidation kinetics of silicon in ultradiluted H₂O and D₂O ambient

A.J. Hof, Alexeij Y. Kovalgin, P.H. Woerlee, Jurriaan Schmitz

Research output: Contribution to journal › Article › Academic › peer-review

3 Citations (Scopus)

5 Downloads (Pure)

Abstract

This work presents a wide range of growth rate data of thin (1-60 nm) silicon oxides grown in an ultradiluted ambient of H2O or D2O in the temperature range 750-950

Original language	Undefined
Pages (from-to)	F133-F137
Number of pages	5
Journal	Journal of the Electrochemical Society
Volume	152
Issue number	9
DOIs	https://doi.org/10.1149/1.1992388
Publication status	Published - 28 Jul 2005

Keywords

METIS-224516
IR-61687
EWI-15502

Access to Document

10.1149/1.1992388

http://eprints.eemcs.utwente.nl/secure2/15502/01/jes_hof.pdf

Cite this

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title = "On the oxidation kinetics of silicon in ultradiluted H2O and D2O ambient",

abstract = "This work presents a wide range of growth rate data of thin (1-60 nm) silicon oxides grown in an ultradiluted ambient of H2O or D2O in the temperature range 750-950",

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AU - Hof, A.J.

AU - Kovalgin, Alexeij Y.

AU - Woerlee, P.H.

AU - Schmitz, Jurriaan

PY - 2005/7/28

Y1 - 2005/7/28

N2 - This work presents a wide range of growth rate data of thin (1-60 nm) silicon oxides grown in an ultradiluted ambient of H2O or D2O in the temperature range 750-950

AB - This work presents a wide range of growth rate data of thin (1-60 nm) silicon oxides grown in an ultradiluted ambient of H2O or D2O in the temperature range 750-950

KW - METIS-224516

KW - IR-61687

KW - EWI-15502

U2 - 10.1149/1.1992388

DO - 10.1149/1.1992388

M3 - Article

SN - 0013-4651

VL - 152

SP - F133-F137

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

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