On the oxidation kinetics of silicon in ultradiluted H2O and D2O ambient

A.J. Hof; Alexeij Y. Kovalgin; P.H. Woerlee; Jurriaan Schmitz

doi:10.1149/1.1992388

On the oxidation kinetics of silicon in ultradiluted H₂O and D₂O ambient

A.J. Hof, Alexeij Y. Kovalgin, P.H. Woerlee, Jurriaan Schmitz

Research output: Contribution to journal › Article › Academic › peer-review

2 Citations (Scopus)

Abstract

This work presents a wide range of growth rate data of thin (1-60 nm) silicon oxides grown in an ultradiluted ambient of H2O or D2O in the temperature range 750-950

Original language	Undefined
Pages (from-to)	F133-F137
Number of pages	5
Journal	Journal of the Electrochemical Society
Volume	152
Issue number	9
DOIs	https://doi.org/10.1149/1.1992388
Publication status	Published - 28 Jul 2005

Keywords

METIS-224516
IR-61687
EWI-15502

Access to Document

10.1149/1.1992388

http://eprints.eemcs.utwente.nl/secure2/15502/01/jes_hof.pdf

Cite this

@article{68e8be99d3764d9e83ca30a996c07d99,

title = "On the oxidation kinetics of silicon in ultradiluted H2O and D2O ambient",

abstract = "This work presents a wide range of growth rate data of thin (1-60 nm) silicon oxides grown in an ultradiluted ambient of H2O or D2O in the temperature range 750-950",

keywords = "METIS-224516, IR-61687, EWI-15502",

author = "A.J. Hof and Kovalgin, {Alexeij Y.} and P.H. Woerlee and Jurriaan Schmitz",

year = "2005",

month = jul,

day = "28",

doi = "10.1149/1.1992388",

language = "Undefined",

volume = "152",

pages = "F133--F137",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "The Electrochemical Society Inc.",

number = "9",

}

TY - JOUR

T1 - On the oxidation kinetics of silicon in ultradiluted H2O and D2O ambient

AU - Hof, A.J.

AU - Kovalgin, Alexeij Y.

AU - Woerlee, P.H.

AU - Schmitz, Jurriaan

PY - 2005/7/28

Y1 - 2005/7/28

N2 - This work presents a wide range of growth rate data of thin (1-60 nm) silicon oxides grown in an ultradiluted ambient of H2O or D2O in the temperature range 750-950

AB - This work presents a wide range of growth rate data of thin (1-60 nm) silicon oxides grown in an ultradiluted ambient of H2O or D2O in the temperature range 750-950

KW - METIS-224516

KW - IR-61687

KW - EWI-15502

U2 - 10.1149/1.1992388

DO - 10.1149/1.1992388

M3 - Article

VL - 152

SP - F133-F137

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 9

ER -