On the potential of BaSO4:Mn6+ for broadly tunable laser emission in the near infrared spectral region

D. Ehrentraut; Markus Pollnau

On the potential of BaSO₄:Mn⁶⁺ for broadly tunable laser emission in the near infrared spectral region

D. Ehrentraut, Markus Pollnau

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Abstract

High-quality layers of BaSO4:Mn6+ were grown by liquid-phase epitaxy. Spectroscopic investigation and numerical calculation using the measured spectroscopic parameters show that lasing at the long-wavelength side should be possible under 532-nm excitation.

Original language	Undefined
Pages	CG2-4
Number of pages	1
Publication status	Published - Jun 2003

Keywords

EWI-17684
IOMS-APD: Active Photonic Devices
IR-70514

Cite this

Ehrentraut, D., & Pollnau, M. (2003). On the potential of BaSO₄:Mn⁶⁺ for broadly tunable laser emission in the near infrared spectral region. CG2-4.

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title = "On the potential of BaSO4:Mn6+ for broadly tunable laser emission in the near infrared spectral region",

abstract = "High-quality layers of BaSO4:Mn6+ were grown by liquid-phase epitaxy. Spectroscopic investigation and numerical calculation using the measured spectroscopic parameters show that lasing at the long-wavelength side should be possible under 532-nm excitation.",

keywords = "EWI-17684, IOMS-APD: Active Photonic Devices, IR-70514",

author = "D. Ehrentraut and Markus Pollnau",

year = "2003",

month = "6",

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pages = "CG2--4",

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TY - CONF

T1 - On the potential of BaSO4:Mn6+ for broadly tunable laser emission in the near infrared spectral region

AU - Ehrentraut, D.

AU - Pollnau, Markus

PY - 2003/6

Y1 - 2003/6

N2 - High-quality layers of BaSO4:Mn6+ were grown by liquid-phase epitaxy. Spectroscopic investigation and numerical calculation using the measured spectroscopic parameters show that lasing at the long-wavelength side should be possible under 532-nm excitation.

AB - High-quality layers of BaSO4:Mn6+ were grown by liquid-phase epitaxy. Spectroscopic investigation and numerical calculation using the measured spectroscopic parameters show that lasing at the long-wavelength side should be possible under 532-nm excitation.

KW - EWI-17684

KW - IOMS-APD: Active Photonic Devices

KW - IR-70514

M3 - Paper

SP - CG2-4

ER -

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