On the reliability of SiGe microwave power heterojunction bipolar transistor

Jinshu Zhang*, Pei Hsin Tsien, Peiyi Chen, L. K. Nanver, J. W. Slotboom

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)

Abstract

Although the performance of SiGe heterojunction bipolar transistor has been improved much with the development of epitaxy technology, the reliability is a concern for practical application due to its large mismatch. We have carried out accelerated life test on the SiGe microwave power heterojunction bipolar transistor, and found that the performance of the SiGe microwave power HBT does not change after the HBT is addressed at peak junction temperature of 200 °C for 168 hrs by forward DC bias. This clearly indicates that the SiGe HBT has the same reliability as Si bipolar transistor.

Original languageEnglish
Title of host publicationProceedings 2000 IEEE Hong Kong Electron Devices Meeting
Pages90-93
Number of pages4
DOIs
Publication statusPublished - 1 Dec 2000
Externally publishedYes
EventIEEE Hong Kong Electron Devices Meeting 2000 - Hong Kong, China
Duration: 24 Jun 200024 Jun 2000

Conference

ConferenceIEEE Hong Kong Electron Devices Meeting 2000
CountryChina
CityHong Kong
Period24/06/0024/06/00

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  • Cite this

    Zhang, J., Tsien, P. H., Chen, P., Nanver, L. K., & Slotboom, J. W. (2000). On the reliability of SiGe microwave power heterojunction bipolar transistor. In Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (pp. 90-93) https://doi.org/10.1109/HKEDM.2000.904223