On the switching speed of SOI LEDs

Jurriaan Schmitz, R. de Vries, Cora Salm, T. Hoang, Raymond Josephus Engelbart Hueting, J. Holleman

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

Recently, we presented a novel design for a silicon LED in SmartCUT™ SOI wafers. It exhibits a record quantum efficiency for SOI-based silicon LEDs and opens the way to the integration of light emitters in a VLSI process on SOI. In this paper, we present first experimental and modeling results showing that this new design has the potential to switch on and off faster than 1 MHz – sufficiently fast for several commercial applications such as an integrated optocoupler.
Original languageEnglish
Title of host publicationProceedings of the Fourth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits
Place of PublicationCork, Ireland
PublisherTyndall National Institute
Pages101-102
Number of pages2
ISBN (Print)not assigned
Publication statusPublished - 23 Jan 2008

Publication series

Name
PublisherTyndall National Institute

Fingerprint

SOI (semiconductors)
light emitting diodes
very large scale integration
silicon
quantum efficiency
emitters
wafers

Keywords

  • EWI-13050
  • IR-62386
  • METIS-256455
  • SC-SBLE: Silicon-based Light Emitters

Cite this

Schmitz, J., de Vries, R., Salm, C., Hoang, T., Hueting, R. J. E., & Holleman, J. (2008). On the switching speed of SOI LEDs. In Proceedings of the Fourth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (pp. 101-102). Cork, Ireland: Tyndall National Institute.
Schmitz, Jurriaan ; de Vries, R. ; Salm, Cora ; Hoang, T. ; Hueting, Raymond Josephus Engelbart ; Holleman, J. / On the switching speed of SOI LEDs. Proceedings of the Fourth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits. Cork, Ireland : Tyndall National Institute, 2008. pp. 101-102
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author = "Jurriaan Schmitz and {de Vries}, R. and Cora Salm and T. Hoang and Hueting, {Raymond Josephus Engelbart} and J. Holleman",
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Schmitz, J, de Vries, R, Salm, C, Hoang, T, Hueting, RJE & Holleman, J 2008, On the switching speed of SOI LEDs. in Proceedings of the Fourth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits. Tyndall National Institute, Cork, Ireland, pp. 101-102.

On the switching speed of SOI LEDs. / Schmitz, Jurriaan; de Vries, R.; Salm, Cora; Hoang, T.; Hueting, Raymond Josephus Engelbart; Holleman, J.

Proceedings of the Fourth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits. Cork, Ireland : Tyndall National Institute, 2008. p. 101-102.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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T1 - On the switching speed of SOI LEDs

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N2 - Recently, we presented a novel design for a silicon LED in SmartCUT™ SOI wafers. It exhibits a record quantum efficiency for SOI-based silicon LEDs and opens the way to the integration of light emitters in a VLSI process on SOI. In this paper, we present first experimental and modeling results showing that this new design has the potential to switch on and off faster than 1 MHz – sufficiently fast for several commercial applications such as an integrated optocoupler.

AB - Recently, we presented a novel design for a silicon LED in SmartCUT™ SOI wafers. It exhibits a record quantum efficiency for SOI-based silicon LEDs and opens the way to the integration of light emitters in a VLSI process on SOI. In this paper, we present first experimental and modeling results showing that this new design has the potential to switch on and off faster than 1 MHz – sufficiently fast for several commercial applications such as an integrated optocoupler.

KW - EWI-13050

KW - IR-62386

KW - METIS-256455

KW - SC-SBLE: Silicon-based Light Emitters

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BT - Proceedings of the Fourth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits

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Schmitz J, de Vries R, Salm C, Hoang T, Hueting RJE, Holleman J. On the switching speed of SOI LEDs. In Proceedings of the Fourth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits. Cork, Ireland: Tyndall National Institute. 2008. p. 101-102