On the use of DC measurements for ESD-related process monitoring

J.R.M. Luchies, Jan Marc Luchies, F.G. Kuper, J.F. Verweij, Jan Verweij

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    Abstract

    DC measurements and transmission line method measurements have been carried out on field oxide NMOSTs made in a 0-8 m CMOS process. Analysis shows that DC measurements can be applied for fast ESD related feedback to submicron process development.
    Original languageUndefined
    Pages (from-to)309-313
    JournalQuality and reliability engineering international
    Volume9
    Issue number4
    DOIs
    Publication statusPublished - 1993

    Keywords

    • METIS-112034
    • IR-71000
    • TLM
    • ESD Semiconductor devices
    • ESD modelling
    • Transmission line method
    • Second breakdown

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