On the yield of compiler-based eSRAMs

X. Wang, M. Ottavi, F. Meyer, F. Lombardi

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

9 Citations (Scopus)

Abstract

This paper presents an extensive evaluation of the manufacturing yield of embedded SRAMs (eSRAM) which are designed using a memory compiler. The yield is evaluated by considering the different design constructs (generally referred to as kernels) that are used in defining the memory architecture through a compiler. Architectural considerations such as array size and line (word and bit) organization are analyzed. Compiler-based features of different kernels (such as required for decoding) are also treated in detail. An extensive evaluation of the provided redundancy (row, column and combined) is pursued to characterize its impact on the memory yield. Industrial data is used in the evaluation and an industrial ASIC chip (made of multiple eSRAMs) is also considered as design case.
Original languageUndefined
Title of host publicationIEEE International Symposium on Defect and Fault Tolerance in VLSI Systems
PublisherIEEE
Number of pages9
ISBN (Print)0-7695-2241-6
DOIs
Publication statusPublished - 8 Nov 2004
Externally publishedYes
Event19th IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems, DFT 2004 - Cannes, France
Duration: 10 Oct 200413 Oct 2004
Conference number: 19

Publication series

Name
ISSN (Print)1550-5774

Conference

Conference19th IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems, DFT 2004
Abbreviated titleDFT 2004
Country/TerritoryFrance
CityCannes
Period10/10/0413/10/04

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