Optical and Electrical Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD

A. Boogaard, Alexeij Y. Kovalgin, I. Brunets, J. Holleman, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

Silicon dioxide films were deposited by means of remote inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) in Ar-N2O-SiH4 plasma at 150 °C and pressures between 1 and 6 Pa. We found that the films contained a high amount of positive oxide charge and exhibited large leakage currents at 1-2 Pa, while films with a lower positive charge and much lower leakage currents were grown at 6 Pa. The deposition rate was ~4.5 nm/min at 1-2 Pa and ~3.5 nm/min at 6 Pa. The lower growth-rate at 6 Pa could be ascribed to the formation of denser films, as well as to the changing plasma and surface chemistry.
Original languageUndefined
Title of host publicationProceedings of the 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors
Place of PublicationUtrecht, The Netherlands
PublisherSTW
Pages404-407
Number of pages4
ISBN (Print)978-90-73461-49-9
Publication statusPublished - 29 Nov 2007
Event10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007 - Veldhoven, Netherlands
Duration: 29 Nov 200730 Nov 2007

Publication series

Name
PublisherTechnology Foundation STW
Number7

Workshop

Workshop10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007
CountryNetherlands
CityVeldhoven
Period29/11/0730/11/07

Keywords

  • SC-ICF: Integrated Circuit Fabrication
  • METIS-245932
  • IR-62109
  • EWI-11717

Cite this

Boogaard, A., Kovalgin, A. Y., Brunets, I., Holleman, J., & Schmitz, J. (2007). Optical and Electrical Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD. In Proceedings of the 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (pp. 404-407). Utrecht, The Netherlands: STW.
Boogaard, A. ; Kovalgin, Alexeij Y. ; Brunets, I. ; Holleman, J. ; Schmitz, Jurriaan. / Optical and Electrical Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD. Proceedings of the 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors. Utrecht, The Netherlands : STW, 2007. pp. 404-407
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title = "Optical and Electrical Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD",
abstract = "Silicon dioxide films were deposited by means of remote inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) in Ar-N2O-SiH4 plasma at 150 °C and pressures between 1 and 6 Pa. We found that the films contained a high amount of positive oxide charge and exhibited large leakage currents at 1-2 Pa, while films with a lower positive charge and much lower leakage currents were grown at 6 Pa. The deposition rate was ~4.5 nm/min at 1-2 Pa and ~3.5 nm/min at 6 Pa. The lower growth-rate at 6 Pa could be ascribed to the formation of denser films, as well as to the changing plasma and surface chemistry.",
keywords = "SC-ICF: Integrated Circuit Fabrication, METIS-245932, IR-62109, EWI-11717",
author = "A. Boogaard and Kovalgin, {Alexeij Y.} and I. Brunets and J. Holleman and Jurriaan Schmitz",
year = "2007",
month = "11",
day = "29",
language = "Undefined",
isbn = "978-90-73461-49-9",
publisher = "STW",
number = "7",
pages = "404--407",
booktitle = "Proceedings of the 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors",

}

Boogaard, A, Kovalgin, AY, Brunets, I, Holleman, J & Schmitz, J 2007, Optical and Electrical Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD. in Proceedings of the 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors. STW, Utrecht, The Netherlands, pp. 404-407, 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007, Veldhoven, Netherlands, 29/11/07.

Optical and Electrical Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD. / Boogaard, A.; Kovalgin, Alexeij Y.; Brunets, I.; Holleman, J.; Schmitz, Jurriaan.

Proceedings of the 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors. Utrecht, The Netherlands : STW, 2007. p. 404-407.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - Optical and Electrical Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD

AU - Boogaard, A.

AU - Kovalgin, Alexeij Y.

AU - Brunets, I.

AU - Holleman, J.

AU - Schmitz, Jurriaan

PY - 2007/11/29

Y1 - 2007/11/29

N2 - Silicon dioxide films were deposited by means of remote inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) in Ar-N2O-SiH4 plasma at 150 °C and pressures between 1 and 6 Pa. We found that the films contained a high amount of positive oxide charge and exhibited large leakage currents at 1-2 Pa, while films with a lower positive charge and much lower leakage currents were grown at 6 Pa. The deposition rate was ~4.5 nm/min at 1-2 Pa and ~3.5 nm/min at 6 Pa. The lower growth-rate at 6 Pa could be ascribed to the formation of denser films, as well as to the changing plasma and surface chemistry.

AB - Silicon dioxide films were deposited by means of remote inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) in Ar-N2O-SiH4 plasma at 150 °C and pressures between 1 and 6 Pa. We found that the films contained a high amount of positive oxide charge and exhibited large leakage currents at 1-2 Pa, while films with a lower positive charge and much lower leakage currents were grown at 6 Pa. The deposition rate was ~4.5 nm/min at 1-2 Pa and ~3.5 nm/min at 6 Pa. The lower growth-rate at 6 Pa could be ascribed to the formation of denser films, as well as to the changing plasma and surface chemistry.

KW - SC-ICF: Integrated Circuit Fabrication

KW - METIS-245932

KW - IR-62109

KW - EWI-11717

M3 - Conference contribution

SN - 978-90-73461-49-9

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EP - 407

BT - Proceedings of the 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors

PB - STW

CY - Utrecht, The Netherlands

ER -

Boogaard A, Kovalgin AY, Brunets I, Holleman J, Schmitz J. Optical and Electrical Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD. In Proceedings of the 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors. Utrecht, The Netherlands: STW. 2007. p. 404-407