Optical and Electrical Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD

A. Boogaard, Alexeij Y. Kovalgin, I. Brunets, J. Holleman, Jurriaan Schmitz

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Abstract

    Silicon dioxide films were deposited by means of remote inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) in Ar-N2O-SiH4 plasma at 150 °C and pressures between 1 and 6 Pa. We found that the films contained a high amount of positive oxide charge and exhibited large leakage currents at 1-2 Pa, while films with a lower positive charge and much lower leakage currents were grown at 6 Pa. The deposition rate was ~4.5 nm/min at 1-2 Pa and ~3.5 nm/min at 6 Pa. The lower growth-rate at 6 Pa could be ascribed to the formation of denser films, as well as to the changing plasma and surface chemistry.
    Original languageUndefined
    Title of host publicationProceedings of the 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors
    Place of PublicationUtrecht, The Netherlands
    PublisherSTW
    Pages404-407
    Number of pages4
    ISBN (Print)978-90-73461-49-9
    Publication statusPublished - 29 Nov 2007
    Event10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007 - Veldhoven, Netherlands
    Duration: 29 Nov 200730 Nov 2007

    Publication series

    Name
    PublisherTechnology Foundation STW
    Number7

    Workshop

    Workshop10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007
    CountryNetherlands
    CityVeldhoven
    Period29/11/0730/11/07

    Keywords

    • SC-ICF: Integrated Circuit Fabrication
    • METIS-245932
    • IR-62109
    • EWI-11717

    Cite this

    Boogaard, A., Kovalgin, A. Y., Brunets, I., Holleman, J., & Schmitz, J. (2007). Optical and Electrical Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD. In Proceedings of the 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (pp. 404-407). Utrecht, The Netherlands: STW.