Abstract
| Original language | Undefined |
|---|---|
| Title of host publication | Proceedings of the 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors |
| Place of Publication | Utrecht, The Netherlands |
| Publisher | STW |
| Pages | 404-407 |
| Number of pages | 4 |
| ISBN (Print) | 978-90-73461-49-9 |
| Publication status | Published - 29 Nov 2007 |
| Event | 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007 - Veldhoven, Netherlands Duration: 29 Nov 2007 → 30 Nov 2007 |
Publication series
| Name | |
|---|---|
| Publisher | Technology Foundation STW |
| Number | 7 |
Workshop
| Workshop | 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007 |
|---|---|
| Country | Netherlands |
| City | Veldhoven |
| Period | 29/11/07 → 30/11/07 |
Keywords
- SC-ICF: Integrated Circuit Fabrication
- METIS-245932
- IR-62109
- EWI-11717
Cite this
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Optical and Electrical Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD. / Boogaard, A.; Kovalgin, Alexeij Y.; Brunets, I.; Holleman, J.; Schmitz, Jurriaan.
Proceedings of the 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors. Utrecht, The Netherlands : STW, 2007. p. 404-407.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review
TY - GEN
T1 - Optical and Electrical Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD
AU - Boogaard, A.
AU - Kovalgin, Alexeij Y.
AU - Brunets, I.
AU - Holleman, J.
AU - Schmitz, Jurriaan
PY - 2007/11/29
Y1 - 2007/11/29
N2 - Silicon dioxide films were deposited by means of remote inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) in Ar-N2O-SiH4 plasma at 150 °C and pressures between 1 and 6 Pa. We found that the films contained a high amount of positive oxide charge and exhibited large leakage currents at 1-2 Pa, while films with a lower positive charge and much lower leakage currents were grown at 6 Pa. The deposition rate was ~4.5 nm/min at 1-2 Pa and ~3.5 nm/min at 6 Pa. The lower growth-rate at 6 Pa could be ascribed to the formation of denser films, as well as to the changing plasma and surface chemistry.
AB - Silicon dioxide films were deposited by means of remote inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) in Ar-N2O-SiH4 plasma at 150 °C and pressures between 1 and 6 Pa. We found that the films contained a high amount of positive oxide charge and exhibited large leakage currents at 1-2 Pa, while films with a lower positive charge and much lower leakage currents were grown at 6 Pa. The deposition rate was ~4.5 nm/min at 1-2 Pa and ~3.5 nm/min at 6 Pa. The lower growth-rate at 6 Pa could be ascribed to the formation of denser films, as well as to the changing plasma and surface chemistry.
KW - SC-ICF: Integrated Circuit Fabrication
KW - METIS-245932
KW - IR-62109
KW - EWI-11717
M3 - Conference contribution
SN - 978-90-73461-49-9
SP - 404
EP - 407
BT - Proceedings of the 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors
PB - STW
CY - Utrecht, The Netherlands
ER -