Silicon dioxide films were deposited by means of remote inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) in Ar-N2O-SiH4 plasma at 150 °C and pressures between 1 and 6 Pa. We found that the films contained a high amount of positive oxide charge and exhibited large leakage currents at 1-2 Pa, while films with a lower positive charge and much lower leakage currents were grown at 6 Pa. The deposition rate was ~4.5 nm/min at 1-2 Pa and ~3.5 nm/min at 6 Pa. The lower growth-rate at 6 Pa could be ascribed to the formation of denser films, as well as to the changing plasma and surface chemistry.
|Publisher||Technology Foundation STW|
|Workshop||10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007|
|Period||29/11/07 → 30/11/07|
- SC-ICF: Integrated Circuit Fabrication