@inproceedings{6b194874b984485eb8a370a9c05b700f,
title = "Optical and Electrical Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD",
abstract = "Silicon dioxide films were deposited by means of remote inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) in Ar-N2O-SiH4 plasma at 150 °C and pressures between 1 and 6 Pa. We found that the films contained a high amount of positive oxide charge and exhibited large leakage currents at 1-2 Pa, while films with a lower positive charge and much lower leakage currents were grown at 6 Pa. The deposition rate was ~4.5 nm/min at 1-2 Pa and ~3.5 nm/min at 6 Pa. The lower growth-rate at 6 Pa could be ascribed to the formation of denser films, as well as to the changing plasma and surface chemistry.",
keywords = "SC-ICF: Integrated Circuit Fabrication, METIS-245932, IR-62109, EWI-11717",
author = "A. Boogaard and Kovalgin, {Alexeij Y.} and I. Brunets and J. Holleman and Jurriaan Schmitz",
year = "2007",
month = nov,
day = "29",
language = "Undefined",
isbn = "978-90-73461-49-9",
publisher = "STW",
number = "7",
pages = "404--407",
booktitle = "Proceedings of the 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors",
note = "null ; Conference date: 29-11-2007 Through 30-11-2007",
}