Abstract
Silicon dioxide films were deposited by means of remote inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) in Ar-N2O-SiH4 plasma at 150 °C and pressures between 1 and 6 Pa. We found that the films contained a high amount of positive oxide charge and exhibited large leakage currents at 1-2 Pa, while films with a lower positive charge and much lower leakage currents were grown at 6 Pa. The deposition rate was ~4.5 nm/min at 1-2 Pa and ~3.5 nm/min at 6 Pa. The lower growth-rate at 6 Pa could be ascribed to the formation of denser films, as well as to the changing plasma and surface chemistry.
| Original language | Undefined |
|---|---|
| Title of host publication | Proceedings of the 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors |
| Place of Publication | Utrecht, The Netherlands |
| Publisher | STW |
| Pages | 404-407 |
| Number of pages | 4 |
| ISBN (Print) | 978-90-73461-49-9 |
| Publication status | Published - 29 Nov 2007 |
| Event | 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007 - Veldhoven, Netherlands Duration: 29 Nov 2007 → 30 Nov 2007 |
Publication series
| Name | |
|---|---|
| Publisher | Technology Foundation STW |
| Number | 7 |
Workshop
| Workshop | 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007 |
|---|---|
| Country | Netherlands |
| City | Veldhoven |
| Period | 29/11/07 → 30/11/07 |
Keywords
- SC-ICF: Integrated Circuit Fabrication
- METIS-245932
- IR-62109
- EWI-11717
Cite this
Boogaard, A., Kovalgin, A. Y., Brunets, I., Holleman, J., & Schmitz, J. (2007). Optical and Electrical Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD. In Proceedings of the 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (pp. 404-407). Utrecht, The Netherlands: STW.