The surface induced optical anisotropy in the electronic structure of clean Ge(001) 2×1 was studied with an ellipsometer at normal incidence. The change in the reflection difference between light polarized parallel and perpendicular to the dimer bond at this surface upon either absorption of molecular oxygen or Ar+ ion bombardment was recorded. Both procedures were found to give the same results. It was possible to obtain a qualitative agreement of the optical spectrum recorded and the position and parity of the occupied and unoccupied surface states known on the clean surface.
|Number of pages||5|
|Journal||Thin solid films|
|Publication status||Published - 1993|
|Event||1st International Conference on Spectroscopic Ellipsometry, ICSE 1993 - Paris, France|
Duration: 11 Jan 1993 → 14 Jan 1993
Conference number: 1