Optical anisotropy of Ge(001)

H. Wormeester; D.J. Wentink; P.L. de Boeij; A. van Silfhout

doi:10.1016/0040-6090(93)90052-Q

Optical anisotropy of Ge(001)

H. Wormeester, D.J. Wentink, P.L. de Boeij, A. van Silfhout

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Abstract

The surface induced optical anisotropy in the electronic structure of clean Ge(001) 2×1 was studied with an ellipsometer at normal incidence. The change in the reflection difference between light polarized parallel and perpendicular to the dimer bond at this surface upon either absorption of molecular oxygen or Ar+ ion bombardment was recorded. Both procedures were found to give the same results. It was possible to obtain a qualitative agreement of the optical spectrum recorded and the position and parity of the occupied and unoccupied surface states known on the clean surface.

Original language	English
Pages (from-to)	14-18
Number of pages	5
Journal	Thin solid films
Volume	233
Issue number	1-2
DOIs	https://doi.org/10.1016/0040-6090(93)90052-Q
Publication status	Published - 1993
Event	1st International Conference on Spectroscopic Ellipsometry, ICSE 1993 - Paris, France Duration: 11 Jan 1993 → 14 Jan 1993 Conference number: 1

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title = "Optical anisotropy of Ge(001)",

abstract = "The surface induced optical anisotropy in the electronic structure of clean Ge(001) 2×1 was studied with an ellipsometer at normal incidence. The change in the reflection difference between light polarized parallel and perpendicular to the dimer bond at this surface upon either absorption of molecular oxygen or Ar+ ion bombardment was recorded. Both procedures were found to give the same results. It was possible to obtain a qualitative agreement of the optical spectrum recorded and the position and parity of the occupied and unoccupied surface states known on the clean surface.",

author = "H. Wormeester and D.J. Wentink and {de Boeij}, P.L. and {van Silfhout}, A.",

year = "1993",

doi = "10.1016/0040-6090(93)90052-Q",

language = "English",

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pages = "14--18",

journal = "Thin solid films",

issn = "0040-6090",

publisher = "Elsevier",

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note = "1st International Conference on Spectroscopic Ellipsometry, ICSE 1993, ICSE ; Conference date: 11-01-1993 Through 14-01-1993",

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T1 - Optical anisotropy of Ge(001)

AU - Wormeester, H.

AU - Wentink, D.J.

AU - de Boeij, P.L.

AU - van Silfhout, A.

N1 - Conference code: 1

PY - 1993

Y1 - 1993

N2 - The surface induced optical anisotropy in the electronic structure of clean Ge(001) 2×1 was studied with an ellipsometer at normal incidence. The change in the reflection difference between light polarized parallel and perpendicular to the dimer bond at this surface upon either absorption of molecular oxygen or Ar+ ion bombardment was recorded. Both procedures were found to give the same results. It was possible to obtain a qualitative agreement of the optical spectrum recorded and the position and parity of the occupied and unoccupied surface states known on the clean surface.

AB - The surface induced optical anisotropy in the electronic structure of clean Ge(001) 2×1 was studied with an ellipsometer at normal incidence. The change in the reflection difference between light polarized parallel and perpendicular to the dimer bond at this surface upon either absorption of molecular oxygen or Ar+ ion bombardment was recorded. Both procedures were found to give the same results. It was possible to obtain a qualitative agreement of the optical spectrum recorded and the position and parity of the occupied and unoccupied surface states known on the clean surface.

U2 - 10.1016/0040-6090(93)90052-Q

DO - 10.1016/0040-6090(93)90052-Q

M3 - Article

VL - 233

SP - 14

EP - 18

JO - Thin solid films

JF - Thin solid films

SN - 0040-6090

IS - 1-2

T2 - 1st International Conference on Spectroscopic Ellipsometry, ICSE 1993

Y2 - 11 January 1993 through 14 January 1993

ER -

Optical anisotropy of Ge(001)

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