Optical gain around 1.5 µm in erbium-doped waveguide amplifiers

Sergio Andrés Vázquez-Córdova, Yean Sheng Yong, Jennifer Lynn Herek, Sonia Maria García Blanco, Markus Pollnau

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

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Abstract

The development in the field of erbium-doped integrated waveguide amplifiers for the generation of broadband and high-speed optical amplification around 1.5−1.6 μm is discussed and current and future potential applications are explored. In erbium-doped amorphous aluminium oxide on a silicon wafer, an internal net gain per unit length of 2.0 dB/cm at the wavelength of 1533 nm and internal net gain over a bandwidth of 80 nm has been demonstrated. Spiral-waveguide amplifiers of different lengths and erbium concentrations have been studied and an internal net gain of 20 dB in the small-signal-gain regime has been achieved. Currently, a highly promising crystalline host material, potassium double tungstate, which provides high emission cross sections to rare-earth ions and has generated an internal net gain per unit length of > 1000 dB/cm when exploiting the ytterbium transition at 1 μm, is doped with erbium ions and tested for amplification around 1.5−1.6 μm.
Original languageEnglish
Title of host publication17th International Conference on Transparent Optical Networks, ICTON 2015
Place of PublicationUSA
PublisherIEEE Photonics Society
PagesPaper Th.A5.4
Number of pages4
ISBN (Print)978-1-4673-7880-2
DOIs
Publication statusPublished - 5 Jul 2015
Event17th International Conference on Transparent Optical Networks, ICTON 2015 - Budapest, Hungary
Duration: 5 Jul 20159 Jul 2015
Conference number: 17

Publication series

Name
PublisherIEEE Photonics Society

Conference

Conference17th International Conference on Transparent Optical Networks, ICTON 2015
Abbreviated titleICTON
CountryHungary
CityBudapest
Period5/07/159/07/15

Fingerprint

erbium
amplifiers
waveguides
tungstates
ytterbium
potassium
ions
rare earth elements
aluminum oxides
high speed
wafers
broadband
bandwidth
cross sections
silicon
wavelengths

Keywords

  • erbium-doped materials
  • IOMS-APD: Active Photonic Devices
  • Integrated Optics
  • EWI-26197
  • waveguide amplifier
  • IR-96787
  • METIS-311687

Cite this

Vázquez-Córdova, S. A., Yong, Y. S., Herek, J. L., García Blanco, S. M., & Pollnau, M. (2015). Optical gain around 1.5 µm in erbium-doped waveguide amplifiers. In 17th International Conference on Transparent Optical Networks, ICTON 2015 (pp. Paper Th.A5.4). USA: IEEE Photonics Society. https://doi.org/10.1109/ICTON.2015.7193702
Vázquez-Córdova, Sergio Andrés ; Yong, Yean Sheng ; Herek, Jennifer Lynn ; García Blanco, Sonia Maria ; Pollnau, Markus . / Optical gain around 1.5 µm in erbium-doped waveguide amplifiers. 17th International Conference on Transparent Optical Networks, ICTON 2015. USA : IEEE Photonics Society, 2015. pp. Paper Th.A5.4
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abstract = "The development in the field of erbium-doped integrated waveguide amplifiers for the generation of broadband and high-speed optical amplification around 1.5−1.6 μm is discussed and current and future potential applications are explored. In erbium-doped amorphous aluminium oxide on a silicon wafer, an internal net gain per unit length of 2.0 dB/cm at the wavelength of 1533 nm and internal net gain over a bandwidth of 80 nm has been demonstrated. Spiral-waveguide amplifiers of different lengths and erbium concentrations have been studied and an internal net gain of 20 dB in the small-signal-gain regime has been achieved. Currently, a highly promising crystalline host material, potassium double tungstate, which provides high emission cross sections to rare-earth ions and has generated an internal net gain per unit length of > 1000 dB/cm when exploiting the ytterbium transition at 1 μm, is doped with erbium ions and tested for amplification around 1.5−1.6 μm.",
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Vázquez-Córdova, SA, Yong, YS, Herek, JL, García Blanco, SM & Pollnau, M 2015, Optical gain around 1.5 µm in erbium-doped waveguide amplifiers. in 17th International Conference on Transparent Optical Networks, ICTON 2015. IEEE Photonics Society, USA, pp. Paper Th.A5.4, 17th International Conference on Transparent Optical Networks, ICTON 2015, Budapest, Hungary, 5/07/15. https://doi.org/10.1109/ICTON.2015.7193702

Optical gain around 1.5 µm in erbium-doped waveguide amplifiers. / Vázquez-Córdova, Sergio Andrés; Yong, Yean Sheng; Herek, Jennifer Lynn; García Blanco, Sonia Maria; Pollnau, Markus .

17th International Conference on Transparent Optical Networks, ICTON 2015. USA : IEEE Photonics Society, 2015. p. Paper Th.A5.4.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

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T1 - Optical gain around 1.5 µm in erbium-doped waveguide amplifiers

AU - Vázquez-Córdova, Sergio Andrés

AU - Yong, Yean Sheng

AU - Herek, Jennifer Lynn

AU - García Blanco, Sonia Maria

AU - Pollnau, Markus

PY - 2015/7/5

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N2 - The development in the field of erbium-doped integrated waveguide amplifiers for the generation of broadband and high-speed optical amplification around 1.5−1.6 μm is discussed and current and future potential applications are explored. In erbium-doped amorphous aluminium oxide on a silicon wafer, an internal net gain per unit length of 2.0 dB/cm at the wavelength of 1533 nm and internal net gain over a bandwidth of 80 nm has been demonstrated. Spiral-waveguide amplifiers of different lengths and erbium concentrations have been studied and an internal net gain of 20 dB in the small-signal-gain regime has been achieved. Currently, a highly promising crystalline host material, potassium double tungstate, which provides high emission cross sections to rare-earth ions and has generated an internal net gain per unit length of > 1000 dB/cm when exploiting the ytterbium transition at 1 μm, is doped with erbium ions and tested for amplification around 1.5−1.6 μm.

AB - The development in the field of erbium-doped integrated waveguide amplifiers for the generation of broadband and high-speed optical amplification around 1.5−1.6 μm is discussed and current and future potential applications are explored. In erbium-doped amorphous aluminium oxide on a silicon wafer, an internal net gain per unit length of 2.0 dB/cm at the wavelength of 1533 nm and internal net gain over a bandwidth of 80 nm has been demonstrated. Spiral-waveguide amplifiers of different lengths and erbium concentrations have been studied and an internal net gain of 20 dB in the small-signal-gain regime has been achieved. Currently, a highly promising crystalline host material, potassium double tungstate, which provides high emission cross sections to rare-earth ions and has generated an internal net gain per unit length of > 1000 dB/cm when exploiting the ytterbium transition at 1 μm, is doped with erbium ions and tested for amplification around 1.5−1.6 μm.

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SN - 978-1-4673-7880-2

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Vázquez-Córdova SA, Yong YS, Herek JL, García Blanco SM, Pollnau M. Optical gain around 1.5 µm in erbium-doped waveguide amplifiers. In 17th International Conference on Transparent Optical Networks, ICTON 2015. USA: IEEE Photonics Society. 2015. p. Paper Th.A5.4 https://doi.org/10.1109/ICTON.2015.7193702