Optical near-field excitation at the semiconductor band edge: Field distributions, anisotropic transitions and quadrupole enhancement

A. von der Heydt, A. Knorr, B. Hanewinkel, S.W. Koch

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The optical near-field response of a three dimensional subwavelength aperture-semiconductor system is analyzed within a finite difference time domain scheme for Maxwell's and excitonic material equations. The analysis includes the field modification due to the high refractive index environment and the excitonic response to a near-field distribution. The resonant optical response is illustrated for anisotropic dipole transitions in quantum wells and the enhancement of the quadrupole transition in materials with dipole forbidden interband transitions.
Original languageUndefined
Pages (from-to)7831-7838
Number of pages8
JournalThe Journal of chemical physics
Issue number18
Publication statusPublished - 2000


  • IR-24774
  • METIS-129575

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