Abstract
In recent work, a novel silicon-based photodiode technology was reported to be suitable for producing radiation detectors for 193 nm deep-ultraviolet light [1] and for the extreme-ultraviolet (EUV) spectral range [2][3]. The devices were developed and fabricated at the Delft Institute of Microsystems and Nanoelectronics (DIMES), TU Delft. In this paper, we characterize the optical performance of the DIMES photo-detectors in the vacuum-ultraviolet (VUV) spectral range, in particular between 115 nm and 215 nm wavelength. We report an outstanding performance in terms of low dark current, high responsivity and irradiation stability. Owing to these features, the presented photodiode technology, which profits from low cost, reduced complexity and full compatibility with standard Si processing, offers a reliable solution for the implementation of detectors in applications making use of VUV radiation.
| Original language | English |
|---|---|
| Pages (from-to) | 633-636 |
| Number of pages | 4 |
| Journal | Procedia engineering |
| Volume | 5 |
| DOIs | |
| Publication status | Published - 1 Jan 2010 |
| Externally published | Yes |
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Keywords
- Photodiodes
- Radiation detectors
- Responsivity
- Ultra-shallow junctions
- Vacuum-ultraviolet
Cite this
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Optical performance of B-layer ultra-shallow-junction silicon photodiodes in the VUV spectral range. / Shi, L.; Sarubbi, F.; Nanver, L. K.; Kroth, U.; Gottwald, A.; Nihtianov, S.
In: Procedia engineering, Vol. 5, 01.01.2010, p. 633-636.Research output: Contribution to journal › Article › Academic › peer-review
TY - JOUR
T1 - Optical performance of B-layer ultra-shallow-junction silicon photodiodes in the VUV spectral range
AU - Shi, L.
AU - Sarubbi, F.
AU - Nanver, L. K.
AU - Kroth, U.
AU - Gottwald, A.
AU - Nihtianov, S.
PY - 2010/1/1
Y1 - 2010/1/1
N2 - In recent work, a novel silicon-based photodiode technology was reported to be suitable for producing radiation detectors for 193 nm deep-ultraviolet light [1] and for the extreme-ultraviolet (EUV) spectral range [2][3]. The devices were developed and fabricated at the Delft Institute of Microsystems and Nanoelectronics (DIMES), TU Delft. In this paper, we characterize the optical performance of the DIMES photo-detectors in the vacuum-ultraviolet (VUV) spectral range, in particular between 115 nm and 215 nm wavelength. We report an outstanding performance in terms of low dark current, high responsivity and irradiation stability. Owing to these features, the presented photodiode technology, which profits from low cost, reduced complexity and full compatibility with standard Si processing, offers a reliable solution for the implementation of detectors in applications making use of VUV radiation.
AB - In recent work, a novel silicon-based photodiode technology was reported to be suitable for producing radiation detectors for 193 nm deep-ultraviolet light [1] and for the extreme-ultraviolet (EUV) spectral range [2][3]. The devices were developed and fabricated at the Delft Institute of Microsystems and Nanoelectronics (DIMES), TU Delft. In this paper, we characterize the optical performance of the DIMES photo-detectors in the vacuum-ultraviolet (VUV) spectral range, in particular between 115 nm and 215 nm wavelength. We report an outstanding performance in terms of low dark current, high responsivity and irradiation stability. Owing to these features, the presented photodiode technology, which profits from low cost, reduced complexity and full compatibility with standard Si processing, offers a reliable solution for the implementation of detectors in applications making use of VUV radiation.
KW - Photodiodes
KW - Radiation detectors
KW - Responsivity
KW - Ultra-shallow junctions
KW - Vacuum-ultraviolet
UR - http://www.scopus.com/inward/record.url?scp=78650498219&partnerID=8YFLogxK
U2 - 10.1016/j.proeng.2010.09.189
DO - 10.1016/j.proeng.2010.09.189
M3 - Article
VL - 5
SP - 633
EP - 636
JO - Procedia engineering
JF - Procedia engineering
SN - 1877-7058
ER -