Optical performance of B-layer ultra-shallow-junction silicon photodiodes in the VUV spectral range

In recent work, a novel silicon-based photodiode technology was reported to be suitable for producing radiation detectors for 193 nm deep-ultraviolet light [1] and for the extreme-ultraviolet (EUV) spectral range [2][3]. The devices were developed and fabricated at the Delft Institute of Microsystems and Nanoelectronics (DIMES), TU Delft. In this paper, we characterize the optical performance of the DIMES photo-detectors in the vacuum-ultraviolet (VUV) spectral range, in particular between 115 nm and 215 nm wavelength. We report an outstanding performance in terms of low dark current, high responsivity and irradiation stability. Owing to these features, the presented photodiode technology, which profits from low cost, reduced complexity and full compatibility with standard Si processing, offers a reliable solution for the implementation of detectors in applications making use of VUV radiation.