Optical performance of B-layer ultra-shallow-junction silicon photodiodes in the VUV spectral range

L. Shi, F. Sarubbi, L. K. Nanver, U. Kroth, A. Gottwald, S. Nihtianov

Research output: Contribution to journalArticleAcademicpeer-review

22 Citations (Scopus)
3 Downloads (Pure)

Abstract

In recent work, a novel silicon-based photodiode technology was reported to be suitable for producing radiation detectors for 193 nm deep-ultraviolet light [1] and for the extreme-ultraviolet (EUV) spectral range [2][3]. The devices were developed and fabricated at the Delft Institute of Microsystems and Nanoelectronics (DIMES), TU Delft. In this paper, we characterize the optical performance of the DIMES photo-detectors in the vacuum-ultraviolet (VUV) spectral range, in particular between 115 nm and 215 nm wavelength. We report an outstanding performance in terms of low dark current, high responsivity and irradiation stability. Owing to these features, the presented photodiode technology, which profits from low cost, reduced complexity and full compatibility with standard Si processing, offers a reliable solution for the implementation of detectors in applications making use of VUV radiation.

Original languageEnglish
Pages (from-to)633-636
Number of pages4
JournalProcedia engineering
Volume5
DOIs
Publication statusPublished - 1 Jan 2010
Externally publishedYes

Fingerprint

Nanoelectronics
Microsystems
Photodiodes
Vacuum
Detectors
Silicon
Radiation detectors
Dark currents
Ultraviolet radiation
Profitability
Irradiation
Wavelength
Processing
Costs
Ultraviolet Rays

Keywords

  • Photodiodes
  • Radiation detectors
  • Responsivity
  • Ultra-shallow junctions
  • Vacuum-ultraviolet

Cite this

Shi, L. ; Sarubbi, F. ; Nanver, L. K. ; Kroth, U. ; Gottwald, A. ; Nihtianov, S. / Optical performance of B-layer ultra-shallow-junction silicon photodiodes in the VUV spectral range. In: Procedia engineering. 2010 ; Vol. 5. pp. 633-636.
@article{5471f91ccf4f4664826cd28d40317152,
title = "Optical performance of B-layer ultra-shallow-junction silicon photodiodes in the VUV spectral range",
abstract = "In recent work, a novel silicon-based photodiode technology was reported to be suitable for producing radiation detectors for 193 nm deep-ultraviolet light [1] and for the extreme-ultraviolet (EUV) spectral range [2][3]. The devices were developed and fabricated at the Delft Institute of Microsystems and Nanoelectronics (DIMES), TU Delft. In this paper, we characterize the optical performance of the DIMES photo-detectors in the vacuum-ultraviolet (VUV) spectral range, in particular between 115 nm and 215 nm wavelength. We report an outstanding performance in terms of low dark current, high responsivity and irradiation stability. Owing to these features, the presented photodiode technology, which profits from low cost, reduced complexity and full compatibility with standard Si processing, offers a reliable solution for the implementation of detectors in applications making use of VUV radiation.",
keywords = "Photodiodes, Radiation detectors, Responsivity, Ultra-shallow junctions, Vacuum-ultraviolet",
author = "L. Shi and F. Sarubbi and Nanver, {L. K.} and U. Kroth and A. Gottwald and S. Nihtianov",
year = "2010",
month = "1",
day = "1",
doi = "10.1016/j.proeng.2010.09.189",
language = "English",
volume = "5",
pages = "633--636",
journal = "Procedia engineering",
issn = "1877-7058",
publisher = "Elsevier",

}

Optical performance of B-layer ultra-shallow-junction silicon photodiodes in the VUV spectral range. / Shi, L.; Sarubbi, F.; Nanver, L. K.; Kroth, U.; Gottwald, A.; Nihtianov, S.

In: Procedia engineering, Vol. 5, 01.01.2010, p. 633-636.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Optical performance of B-layer ultra-shallow-junction silicon photodiodes in the VUV spectral range

AU - Shi, L.

AU - Sarubbi, F.

AU - Nanver, L. K.

AU - Kroth, U.

AU - Gottwald, A.

AU - Nihtianov, S.

PY - 2010/1/1

Y1 - 2010/1/1

N2 - In recent work, a novel silicon-based photodiode technology was reported to be suitable for producing radiation detectors for 193 nm deep-ultraviolet light [1] and for the extreme-ultraviolet (EUV) spectral range [2][3]. The devices were developed and fabricated at the Delft Institute of Microsystems and Nanoelectronics (DIMES), TU Delft. In this paper, we characterize the optical performance of the DIMES photo-detectors in the vacuum-ultraviolet (VUV) spectral range, in particular between 115 nm and 215 nm wavelength. We report an outstanding performance in terms of low dark current, high responsivity and irradiation stability. Owing to these features, the presented photodiode technology, which profits from low cost, reduced complexity and full compatibility with standard Si processing, offers a reliable solution for the implementation of detectors in applications making use of VUV radiation.

AB - In recent work, a novel silicon-based photodiode technology was reported to be suitable for producing radiation detectors for 193 nm deep-ultraviolet light [1] and for the extreme-ultraviolet (EUV) spectral range [2][3]. The devices were developed and fabricated at the Delft Institute of Microsystems and Nanoelectronics (DIMES), TU Delft. In this paper, we characterize the optical performance of the DIMES photo-detectors in the vacuum-ultraviolet (VUV) spectral range, in particular between 115 nm and 215 nm wavelength. We report an outstanding performance in terms of low dark current, high responsivity and irradiation stability. Owing to these features, the presented photodiode technology, which profits from low cost, reduced complexity and full compatibility with standard Si processing, offers a reliable solution for the implementation of detectors in applications making use of VUV radiation.

KW - Photodiodes

KW - Radiation detectors

KW - Responsivity

KW - Ultra-shallow junctions

KW - Vacuum-ultraviolet

UR - http://www.scopus.com/inward/record.url?scp=78650498219&partnerID=8YFLogxK

U2 - 10.1016/j.proeng.2010.09.189

DO - 10.1016/j.proeng.2010.09.189

M3 - Article

VL - 5

SP - 633

EP - 636

JO - Procedia engineering

JF - Procedia engineering

SN - 1877-7058

ER -