Optical properties of intrinsic and doped a-Si:H films grown by d.c. magnetron sputter deposition

A. Rantzer, H. Arwin, J. Birch, B. Hjörvarsson, Jimmy Bakker, K. Järrendahl

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3 Citations (Scopus)

Abstract

Thin films of intrinsic, B- and P-doped a-Si:H were grown by d.c. magnetron sputter deposition. The doping was accomplished by doped targets and co-sputtering Si and B4C. Spectroscopic ellipsometry was used for optical characterization and multiple sample analysis was applied to extract the dielectric functions of intrinsic films with 8–10 at.% hydrogen content, boron doped films with 2.2 at.% hydrogen and phosphorous-doped films with hydrogen contents of 10–15 at.%. One of the phosphorous-doped films was micro-crystalline. Hydrogen content was determined by nuclear reaction analysis. From the obtained optical properties the absorption and the optical gap were studied addressing p–i–n diode applications. The optical gaps for intrinsic a-Si:H material were 1.88±0.03 eV as determined by Tauc analysis and 1.45±0.06 eV by applying Cody analysis.
Original languageEnglish
Pages (from-to)255-262
JournalThin solid films
Volume394
Issue number1-2
DOIs
Publication statusPublished - 2001

Keywords

  • Amorphous silicon
  • Ellipsometry
  • Optical properties
  • Sputtering

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    Rantzer, A., Arwin, H., Birch, J., Hjörvarsson, B., Bakker, J., & Järrendahl, K. (2001). Optical properties of intrinsic and doped a-Si:H films grown by d.c. magnetron sputter deposition. Thin solid films, 394(1-2), 255-262. https://doi.org/10.1016/S0040-6090(01)01179-8