Optical stability investigation of high-performance silicon-based VUV photodiodes

L. Shi*, L. K. Nanver, A. Šakić, S. Nihtianov, A. Gottwald, U. Kroth

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

9 Citations (Scopus)

Abstract

Silicon p+n photodiodes fabricated by a pure boron deposition technology are evaluated for detection in the Vacuum Ultra-Violet (VUV) spectral range from 115 nm to 215 nm wavelengths, where the attenuation length in silicon is only a few nanometers. It is demonstrated that the junctions formed by the B-layer process are so ultrashallow that the photodiodes are able to provide a very good sensitivity, in the order of 0.1 A/W, in the whole VUV range. Moreover, the demonstrated stability also appears to be very good if isolating layers on the diode surface are avoided.

Original languageEnglish
Title of host publicationIEEE Sensors 2010 Conference, SENSORS 2010
Pages132-135
Number of pages4
DOIs
Publication statusPublished - 1 Dec 2010
Externally publishedYes
Event9th IEEE Sensors 2010 - Hilton Waikoloa Village, Waikoloa, United States
Duration: 1 Nov 20104 Nov 2010
Conference number: 9

Conference

Conference9th IEEE Sensors 2010
CountryUnited States
CityWaikoloa
Period1/11/104/11/10

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