Abstract
Silicon p+n photodiodes fabricated by a pure boron deposition technology are evaluated for detection in the Vacuum Ultra-Violet (VUV) spectral range from 115 nm to 215 nm wavelengths, where the attenuation length in silicon is only a few nanometers. It is demonstrated that the junctions formed by the B-layer process are so ultrashallow that the photodiodes are able to provide a very good sensitivity, in the order of 0.1 A/W, in the whole VUV range. Moreover, the demonstrated stability also appears to be very good if isolating layers on the diode surface are avoided.
Original language | English |
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Title of host publication | IEEE Sensors 2010 Conference, SENSORS 2010 |
Pages | 132-135 |
Number of pages | 4 |
DOIs | |
Publication status | Published - 1 Dec 2010 |
Externally published | Yes |
Event | 9th IEEE Sensors 2010 - Hilton Waikoloa Village, Waikoloa, United States Duration: 1 Nov 2010 → 4 Nov 2010 Conference number: 9 |
Conference
Conference | 9th IEEE Sensors 2010 |
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Country/Territory | United States |
City | Waikoloa |
Period | 1/11/10 → 4/11/10 |