Optical stability investigation of high-performance silicon-based VUV photodiodes

L. Shi; L. K. Nanver; A. Šakić; S. Nihtianov; A. Gottwald; U. Kroth

doi:10.1109/ICSENS.2010.5690669

Optical stability investigation of high-performance silicon-based VUV photodiodes

L. Shi^*
, L. K. Nanver
, A. Šakić
, S. Nihtianov
, A. Gottwald
, U. Kroth

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

10 Citations (Scopus)

Abstract

Silicon p⁺n photodiodes fabricated by a pure boron deposition technology are evaluated for detection in the Vacuum Ultra-Violet (VUV) spectral range from 115 nm to 215 nm wavelengths, where the attenuation length in silicon is only a few nanometers. It is demonstrated that the junctions formed by the B-layer process are so ultrashallow that the photodiodes are able to provide a very good sensitivity, in the order of 0.1 A/W, in the whole VUV range. Moreover, the demonstrated stability also appears to be very good if isolating layers on the diode surface are avoided.

Original language	English
Title of host publication	IEEE Sensors 2010 Conference, SENSORS 2010
Pages	132-135
Number of pages	4
DOIs	https://doi.org/10.1109/ICSENS.2010.5690669
Publication status	Published - 1 Dec 2010
Externally published	Yes
Event	9th IEEE Sensors 2010 - Hilton Waikoloa Village, Waikoloa, United States Duration: 1 Nov 2010 → 4 Nov 2010 Conference number: 9

Conference

Conference	9th IEEE Sensors 2010
Country/Territory	United States
City	Waikoloa
Period	1/11/10 → 4/11/10

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10.1109/ICSENS.2010.5690669

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title = "Optical stability investigation of high-performance silicon-based VUV photodiodes",

abstract = "Silicon p+n photodiodes fabricated by a pure boron deposition technology are evaluated for detection in the Vacuum Ultra-Violet (VUV) spectral range from 115 nm to 215 nm wavelengths, where the attenuation length in silicon is only a few nanometers. It is demonstrated that the junctions formed by the B-layer process are so ultrashallow that the photodiodes are able to provide a very good sensitivity, in the order of 0.1 A/W, in the whole VUV range. Moreover, the demonstrated stability also appears to be very good if isolating layers on the diode surface are avoided.",

author = "L. Shi and Nanver, \{L. K.\} and A. {\v S}aki{\'c} and S. Nihtianov and A. Gottwald and U. Kroth",

year = "2010",

month = dec,

day = "1",

doi = "10.1109/ICSENS.2010.5690669",

language = "English",

isbn = "9781424481682",

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booktitle = "IEEE Sensors 2010 Conference, SENSORS 2010",

note = "9th IEEE Sensors 2010 ; Conference date: 01-11-2010 Through 04-11-2010",

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T1 - Optical stability investigation of high-performance silicon-based VUV photodiodes

AU - Shi, L.

AU - Nanver, L. K.

AU - Šakić, A.

AU - Nihtianov, S.

AU - Gottwald, A.

AU - Kroth, U.

N1 - Conference code: 9

PY - 2010/12/1

Y1 - 2010/12/1

N2 - Silicon p+n photodiodes fabricated by a pure boron deposition technology are evaluated for detection in the Vacuum Ultra-Violet (VUV) spectral range from 115 nm to 215 nm wavelengths, where the attenuation length in silicon is only a few nanometers. It is demonstrated that the junctions formed by the B-layer process are so ultrashallow that the photodiodes are able to provide a very good sensitivity, in the order of 0.1 A/W, in the whole VUV range. Moreover, the demonstrated stability also appears to be very good if isolating layers on the diode surface are avoided.

AB - Silicon p+n photodiodes fabricated by a pure boron deposition technology are evaluated for detection in the Vacuum Ultra-Violet (VUV) spectral range from 115 nm to 215 nm wavelengths, where the attenuation length in silicon is only a few nanometers. It is demonstrated that the junctions formed by the B-layer process are so ultrashallow that the photodiodes are able to provide a very good sensitivity, in the order of 0.1 A/W, in the whole VUV range. Moreover, the demonstrated stability also appears to be very good if isolating layers on the diode surface are avoided.

UR - https://www.scopus.com/pages/publications/79951879325

U2 - 10.1109/ICSENS.2010.5690669

DO - 10.1109/ICSENS.2010.5690669

M3 - Conference contribution

AN - SCOPUS:79951879325

SN - 9781424481682

SP - 132

EP - 135

BT - IEEE Sensors 2010 Conference, SENSORS 2010

T2 - 9th IEEE Sensors 2010

Y2 - 1 November 2010 through 4 November 2010

ER -

Optical stability investigation of high-performance silicon-based VUV photodiodes

Abstract

Conference

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