Optically activated ZnO/SiO2/Si cantilever beams

J. Suskia; D. Largeaua; A. Steyer; F.C.M. van de Pol; F.R. Blom

doi:10.1016/0924-4247(90)80062-A

Optically activated ZnO/SiO2/Si cantilever beams

J. Suskia, D. Largeaua, A. Steyer, F.C.M. van de Pol, F.R. Blom

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Abstract

The photomechanical effect induced by periodically varying sub-bandgap illumination in thin ZnO films deposited on oxidized Si has been demonstrated for the first time. The efficiency of this effect is at least one order of magnitude higher as compared to the photothermal activation of Si. Thus it can be considered as a powerful optical drive for resonant sensors. A phenomenological model of the mechanisms involved in the process is proposed. The optomechanical effect can also be used as a complementary method in determination of the surface state parameters of ZnO films.

Original language	English
Pages (from-to)	221-225
Number of pages	5
Journal	Sensors and Actuators A: Physical
Volume	24
Issue number	324
DOIs	https://doi.org/10.1016/0924-4247(90)80062-A
Publication status	Published - 1990

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title = "Optically activated ZnO/SiO2/Si cantilever beams",

abstract = "The photomechanical effect induced by periodically varying sub-bandgap illumination in thin ZnO films deposited on oxidized Si has been demonstrated for the first time. The efficiency of this effect is at least one order of magnitude higher as compared to the photothermal activation of Si. Thus it can be considered as a powerful optical drive for resonant sensors. A phenomenological model of the mechanisms involved in the process is proposed. The optomechanical effect can also be used as a complementary method in determination of the surface state parameters of ZnO films.",

author = "J. Suskia and D. Largeaua and A. Steyer and {van de Pol}, F.C.M. and F.R. Blom",

year = "1990",

doi = "10.1016/0924-4247(90)80062-A",

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T1 - Optically activated ZnO/SiO2/Si cantilever beams

AU - Suskia, J.

AU - Largeaua, D.

AU - Steyer, A.

AU - van de Pol, F.C.M.

AU - Blom, F.R.

PY - 1990

Y1 - 1990

N2 - The photomechanical effect induced by periodically varying sub-bandgap illumination in thin ZnO films deposited on oxidized Si has been demonstrated for the first time. The efficiency of this effect is at least one order of magnitude higher as compared to the photothermal activation of Si. Thus it can be considered as a powerful optical drive for resonant sensors. A phenomenological model of the mechanisms involved in the process is proposed. The optomechanical effect can also be used as a complementary method in determination of the surface state parameters of ZnO films.

AB - The photomechanical effect induced by periodically varying sub-bandgap illumination in thin ZnO films deposited on oxidized Si has been demonstrated for the first time. The efficiency of this effect is at least one order of magnitude higher as compared to the photothermal activation of Si. Thus it can be considered as a powerful optical drive for resonant sensors. A phenomenological model of the mechanisms involved in the process is proposed. The optomechanical effect can also be used as a complementary method in determination of the surface state parameters of ZnO films.

U2 - 10.1016/0924-4247(90)80062-A

DO - 10.1016/0924-4247(90)80062-A

M3 - Article

SN - 0924-4247

VL - 24

SP - 221

EP - 225

JO - Sensors and Actuators A: Physical

JF - Sensors and Actuators A: Physical

IS - 324

ER -

Optically activated ZnO/SiO2/Si cantilever beams

Abstract

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