Optically excited multi-band conduction in LaAlO3/SrTiO3 heterostructures

V.K. Guduru; A. Granados del Aguila; Sander Wenderich; Michelle Kruize; A. McCollam; P.C.M. Christianen; U. Zeitler; Alexander Brinkman; Augustinus J.H.M. Rijnders; Johannes W.M. Hilgenkamp; J.C. Maan

doi:10.1063/1.4790844

Optically excited multi-band conduction in LaAlO3/SrTiO3 heterostructures

V.K. Guduru, A. Granados del Aguila, Sander Wenderich, Michelle Kruize, A. McCollam, P.C.M. Christianen, U. Zeitler, Alexander Brinkman, Augustinus J.H.M. Rijnders, Johannes W.M. Hilgenkamp, J.C. Maan

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Abstract

The low-temperature resistance of a conducting LaAlO3/SrTiO3 interface with a 10 nm LaAlO3 film decreases by more than 50% after illumination with light of energy higher than the SrTiO3 band-gap. We explain our observations by optical excitation of an additional high mobility electron channel, which is spatially separated from the photo-excited holes. After illumination, we measure a strongly non-linear Hall resistance which is governed by the concentration and mobility of the photo-excited carriers. This can be explained within a two-carrier model where illumination creates a high mobility electron channel in addition to a low mobility electron channel which exists before illumination.

Original language	English
Article number	051604
Pages (from-to)	-
Number of pages	4
Journal	Applied physics letters
Volume	102
Issue number	051604
DOIs	https://doi.org/10.1063/1.4790844
Publication status	Published - 2013

Keywords

IR-86928
METIS-297197

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title = "Optically excited multi-band conduction in LaAlO3/SrTiO3 heterostructures",

abstract = "The low-temperature resistance of a conducting LaAlO3/SrTiO3 interface with a 10 nm LaAlO3 film decreases by more than 50% after illumination with light of energy higher than the SrTiO3 band-gap. We explain our observations by optical excitation of an additional high mobility electron channel, which is spatially separated from the photo-excited holes. After illumination, we measure a strongly non-linear Hall resistance which is governed by the concentration and mobility of the photo-excited carriers. This can be explained within a two-carrier model where illumination creates a high mobility electron channel in addition to a low mobility electron channel which exists before illumination.",

keywords = "IR-86928, METIS-297197",

author = "V.K. Guduru and {Granados del Aguila}, A. and Sander Wenderich and Michelle Kruize and A. McCollam and P.C.M. Christianen and U. Zeitler and Alexander Brinkman and Rijnders, {Augustinus J.H.M.} and Hilgenkamp, {Johannes W.M.} and J.C. Maan",

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doi = "10.1063/1.4790844",

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journal = "Applied physics letters",

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publisher = "American Institute of Physics",

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T1 - Optically excited multi-band conduction in LaAlO3/SrTiO3 heterostructures

AU - Guduru, V.K.

AU - Granados del Aguila, A.

AU - Wenderich, Sander

AU - Kruize, Michelle

AU - McCollam, A.

AU - Christianen, P.C.M.

AU - Zeitler, U.

AU - Brinkman, Alexander

AU - Rijnders, Augustinus J.H.M.

AU - Hilgenkamp, Johannes W.M.

AU - Maan, J.C.

PY - 2013

Y1 - 2013

N2 - The low-temperature resistance of a conducting LaAlO3/SrTiO3 interface with a 10 nm LaAlO3 film decreases by more than 50% after illumination with light of energy higher than the SrTiO3 band-gap. We explain our observations by optical excitation of an additional high mobility electron channel, which is spatially separated from the photo-excited holes. After illumination, we measure a strongly non-linear Hall resistance which is governed by the concentration and mobility of the photo-excited carriers. This can be explained within a two-carrier model where illumination creates a high mobility electron channel in addition to a low mobility electron channel which exists before illumination.

AB - The low-temperature resistance of a conducting LaAlO3/SrTiO3 interface with a 10 nm LaAlO3 film decreases by more than 50% after illumination with light of energy higher than the SrTiO3 band-gap. We explain our observations by optical excitation of an additional high mobility electron channel, which is spatially separated from the photo-excited holes. After illumination, we measure a strongly non-linear Hall resistance which is governed by the concentration and mobility of the photo-excited carriers. This can be explained within a two-carrier model where illumination creates a high mobility electron channel in addition to a low mobility electron channel which exists before illumination.

KW - IR-86928

KW - METIS-297197

U2 - 10.1063/1.4790844

DO - 10.1063/1.4790844

M3 - Article

SN - 0003-6951

VL - 102

SP - -

JO - Applied physics letters

JF - Applied physics letters

IS - 051604

M1 - 051604

ER -

Optically excited multi-band conduction in LaAlO3/SrTiO3 heterostructures

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