Optically Integrated InP-Si3N4 Hybrid Laser

Youwen Fan, J.P. Epping, Ruud Oldenbeuving, C.G.H. Roeloffzen, M. Hoekman, R Dekker, Rene Heideman, Petrus J.M. van der Slot, Klaus J. Boller

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Abstract

We describe the first demonstration and characterization of an optically integrated InP-Si3 N4 hybrid laser. The laser is formed by integration of an InP-based reflective semiconductor optical amplifier with a InP-Si3 N4 based feedback waveguide circuit. The circuit comprises a frequency selective and tunable Vernier mirror composed of two microring resonators with slightly different radii. A wide tuning range of more than 43 nm is achieved via the thermo-optic effect. The typical side mode suppression ratio is 35 dB. The narrowest linewidth achieved is about 90 kHz, and the relative intensity noise is less than -135 dBc/Hz.
Original languageEnglish
Article number1505111
Pages (from-to)-
Number of pages12
JournalIEEE photonics journal
Volume8
Issue number6
DOIs
Publication statusPublished - 1 Dec 2016

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Semiconductor optical amplifiers
Networks (circuits)
Lasers
noise intensity
light amplifiers
Linewidth
lasers
Resonators
Optics
Mirrors
Waveguides
Demonstrations
Tuning
resonators
tuning
retarding
optics
mirrors
waveguides
Feedback

Keywords

  • IR-103785
  • METIS-320001

Cite this

Fan, Y., Epping, J. P., Oldenbeuving, R., Roeloffzen, C. G. H., Hoekman, M., Dekker, R., ... Boller, K. J. (2016). Optically Integrated InP-Si3N4 Hybrid Laser. IEEE photonics journal, 8(6), -. [1505111]. https://doi.org/10.1109/JPHOT.2016.2633402
Fan, Youwen ; Epping, J.P. ; Oldenbeuving, Ruud ; Roeloffzen, C.G.H. ; Hoekman, M. ; Dekker, R ; Heideman, Rene ; van der Slot, Petrus J.M. ; Boller, Klaus J. / Optically Integrated InP-Si3N4 Hybrid Laser. In: IEEE photonics journal. 2016 ; Vol. 8, No. 6. pp. -.
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abstract = "We describe the first demonstration and characterization of an optically integrated InP-Si3 N4 hybrid laser. The laser is formed by integration of an InP-based reflective semiconductor optical amplifier with a InP-Si3 N4 based feedback waveguide circuit. The circuit comprises a frequency selective and tunable Vernier mirror composed of two microring resonators with slightly different radii. A wide tuning range of more than 43 nm is achieved via the thermo-optic effect. The typical side mode suppression ratio is 35 dB. The narrowest linewidth achieved is about 90 kHz, and the relative intensity noise is less than -135 dBc/Hz.",
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Fan, Y, Epping, JP, Oldenbeuving, R, Roeloffzen, CGH, Hoekman, M, Dekker, R, Heideman, R, van der Slot, PJM & Boller, KJ 2016, 'Optically Integrated InP-Si3N4 Hybrid Laser' IEEE photonics journal, vol. 8, no. 6, 1505111, pp. -. https://doi.org/10.1109/JPHOT.2016.2633402

Optically Integrated InP-Si3N4 Hybrid Laser. / Fan, Youwen; Epping, J.P.; Oldenbeuving, Ruud; Roeloffzen, C.G.H.; Hoekman, M.; Dekker, R; Heideman, Rene; van der Slot, Petrus J.M.; Boller, Klaus J.

In: IEEE photonics journal, Vol. 8, No. 6, 1505111, 01.12.2016, p. -.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Optically Integrated InP-Si3N4 Hybrid Laser

AU - Fan, Youwen

AU - Epping, J.P.

AU - Oldenbeuving, Ruud

AU - Roeloffzen, C.G.H.

AU - Hoekman, M.

AU - Dekker, R

AU - Heideman, Rene

AU - van der Slot, Petrus J.M.

AU - Boller, Klaus J.

N1 - Open access

PY - 2016/12/1

Y1 - 2016/12/1

N2 - We describe the first demonstration and characterization of an optically integrated InP-Si3 N4 hybrid laser. The laser is formed by integration of an InP-based reflective semiconductor optical amplifier with a InP-Si3 N4 based feedback waveguide circuit. The circuit comprises a frequency selective and tunable Vernier mirror composed of two microring resonators with slightly different radii. A wide tuning range of more than 43 nm is achieved via the thermo-optic effect. The typical side mode suppression ratio is 35 dB. The narrowest linewidth achieved is about 90 kHz, and the relative intensity noise is less than -135 dBc/Hz.

AB - We describe the first demonstration and characterization of an optically integrated InP-Si3 N4 hybrid laser. The laser is formed by integration of an InP-based reflective semiconductor optical amplifier with a InP-Si3 N4 based feedback waveguide circuit. The circuit comprises a frequency selective and tunable Vernier mirror composed of two microring resonators with slightly different radii. A wide tuning range of more than 43 nm is achieved via the thermo-optic effect. The typical side mode suppression ratio is 35 dB. The narrowest linewidth achieved is about 90 kHz, and the relative intensity noise is less than -135 dBc/Hz.

KW - IR-103785

KW - METIS-320001

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JO - IEEE photonics journal

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Fan Y, Epping JP, Oldenbeuving R, Roeloffzen CGH, Hoekman M, Dekker R et al. Optically Integrated InP-Si3N4 Hybrid Laser. IEEE photonics journal. 2016 Dec 1;8(6):-. 1505111. https://doi.org/10.1109/JPHOT.2016.2633402