TY - JOUR
T1 - Optically Integrated InP-Si3N4 Hybrid Laser
AU - Fan, Youwen
AU - Epping, Jörn P.
AU - Oldenbeuving, Ruud M.
AU - Roeloffzen, Chris G.H.
AU - Hoekman, Marcel
AU - Dekker, Ronald
AU - Heideman, René G.
AU - van der Slot, Peter J.M.
AU - Boller, Klaus-J.
PY - 2016/12/1
Y1 - 2016/12/1
N2 - We describe the first demonstration and characterization of an optically integrated InP-Si3N4 hybrid laser. The laser is formed by integration of an InP-based reflective semiconductor optical amplifier with a InP-Si3N4 based feedback waveguide circuit. The circuit comprises a frequency selective and tunable Vernier mirror composed of two microring resonators with slightly different radii. A wide tuning range of more than 43 nm is achieved via the thermo-optic effect. The typical side mode suppression ratio is 35 dB. The narrowest linewidth achieved is about 90 kHz, and the relative intensity noise is less than -135 dBc/Hz.
AB - We describe the first demonstration and characterization of an optically integrated InP-Si3N4 hybrid laser. The laser is formed by integration of an InP-based reflective semiconductor optical amplifier with a InP-Si3N4 based feedback waveguide circuit. The circuit comprises a frequency selective and tunable Vernier mirror composed of two microring resonators with slightly different radii. A wide tuning range of more than 43 nm is achieved via the thermo-optic effect. The typical side mode suppression ratio is 35 dB. The narrowest linewidth achieved is about 90 kHz, and the relative intensity noise is less than -135 dBc/Hz.
U2 - 10.1109/JPHOT.2016.2633402
DO - 10.1109/JPHOT.2016.2633402
M3 - Article
VL - 8
SP - -
JO - IEEE photonics journal
JF - IEEE photonics journal
SN - 1943-0655
IS - 6
M1 - 1505111
ER -