Optically Integrated InP-Si3N4 Hybrid Laser

Youwen Fan; Jörn P. Epping; Ruud M. Oldenbeuving; Chris G.H. Roeloffzen; Marcel Hoekman; Ronald Dekker; René G. Heideman; Peter J.M. van der Slot; Klaus-J. Boller

doi:10.1109/JPHOT.2016.2633402

Optically Integrated InP-Si₃N₄ Hybrid Laser

Youwen Fan, Jörn P. Epping, Ruud M. Oldenbeuving, Chris G.H. Roeloffzen, Marcel Hoekman, Ronald Dekker, René G. Heideman, Peter J.M. van der Slot, Klaus-J. Boller

Research output: Contribution to journal › Article › Academic › peer-review

35 Citations (Scopus)

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Abstract

We describe the first demonstration and characterization of an optically integrated InP-Si₃N₄ hybrid laser. The laser is formed by integration of an InP-based reflective semiconductor optical amplifier with a InP-Si₃N₄ based feedback waveguide circuit. The circuit comprises a frequency selective and tunable Vernier mirror composed of two microring resonators with slightly different radii. A wide tuning range of more than 43 nm is achieved via the thermo-optic effect. The typical side mode suppression ratio is 35 dB. The narrowest linewidth achieved is about 90 kHz, and the relative intensity noise is less than -135 dBc/Hz.

Original language	English
Article number	1505111
Pages (from-to)	-
Number of pages	12
Journal	IEEE photonics journal
Volume	8
Issue number	6
DOIs	https://doi.org/10.1109/JPHOT.2016.2633402
Publication status	Published - 1 Dec 2016

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Fan, Y., Epping, J. P., Oldenbeuving, R. M., Roeloffzen, C. G. H., Hoekman, M., Dekker, R., ... Boller, K-J. (2016). Optically Integrated InP-Si₃N₄ Hybrid Laser. IEEE photonics journal, 8(6), -. [1505111]. https://doi.org/10.1109/JPHOT.2016.2633402

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title = "Optically Integrated InP-Si3N4 Hybrid Laser",

abstract = "We describe the first demonstration and characterization of an optically integrated InP-Si3N4 hybrid laser. The laser is formed by integration of an InP-based reflective semiconductor optical amplifier with a InP-Si3N4 based feedback waveguide circuit. The circuit comprises a frequency selective and tunable Vernier mirror composed of two microring resonators with slightly different radii. A wide tuning range of more than 43 nm is achieved via the thermo-optic effect. The typical side mode suppression ratio is 35 dB. The narrowest linewidth achieved is about 90 kHz, and the relative intensity noise is less than -135 dBc/Hz.",

author = "Youwen Fan and Epping, {J{\"o}rn P.} and Oldenbeuving, {Ruud M.} and Roeloffzen, {Chris G.H.} and Marcel Hoekman and Ronald Dekker and Heideman, {Ren{\'e} G.} and {van der Slot}, {Peter J.M.} and Klaus-J. Boller",

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Optically Integrated InP-Si₃N₄ Hybrid Laser. / Fan, Youwen; Epping, Jörn P.; Oldenbeuving, Ruud M.; Roeloffzen, Chris G.H.; Hoekman, Marcel; Dekker, Ronald; Heideman, René G.; van der Slot, Peter J.M.; Boller, Klaus-J.

In: IEEE photonics journal, Vol. 8, No. 6, 1505111, 01.12.2016, p. -.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - Optically Integrated InP-Si3N4 Hybrid Laser

AU - Fan, Youwen

AU - Epping, Jörn P.

AU - Oldenbeuving, Ruud M.

AU - Roeloffzen, Chris G.H.

AU - Hoekman, Marcel

AU - Dekker, Ronald

AU - Heideman, René G.

AU - van der Slot, Peter J.M.

AU - Boller, Klaus-J.

PY - 2016/12/1

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N2 - We describe the first demonstration and characterization of an optically integrated InP-Si3N4 hybrid laser. The laser is formed by integration of an InP-based reflective semiconductor optical amplifier with a InP-Si3N4 based feedback waveguide circuit. The circuit comprises a frequency selective and tunable Vernier mirror composed of two microring resonators with slightly different radii. A wide tuning range of more than 43 nm is achieved via the thermo-optic effect. The typical side mode suppression ratio is 35 dB. The narrowest linewidth achieved is about 90 kHz, and the relative intensity noise is less than -135 dBc/Hz.

AB - We describe the first demonstration and characterization of an optically integrated InP-Si3N4 hybrid laser. The laser is formed by integration of an InP-based reflective semiconductor optical amplifier with a InP-Si3N4 based feedback waveguide circuit. The circuit comprises a frequency selective and tunable Vernier mirror composed of two microring resonators with slightly different radii. A wide tuning range of more than 43 nm is achieved via the thermo-optic effect. The typical side mode suppression ratio is 35 dB. The narrowest linewidth achieved is about 90 kHz, and the relative intensity noise is less than -135 dBc/Hz.

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