Abstract
| Original language | English |
|---|---|
| Article number | 1505111 |
| Pages (from-to) | - |
| Number of pages | 12 |
| Journal | IEEE photonics journal |
| Volume | 8 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1 Dec 2016 |
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Optically Integrated InP-Si3N4 Hybrid Laser. / Fan, Youwen; Epping, Jörn P.; Oldenbeuving, Ruud M.; Roeloffzen, Chris G.H.; Hoekman, Marcel; Dekker, Ronald; Heideman, René G.; van der Slot, Peter J.M.; Boller, Klaus-J.
In: IEEE photonics journal, Vol. 8, No. 6, 1505111, 01.12.2016, p. -.Research output: Contribution to journal › Article › Academic › peer-review
TY - JOUR
T1 - Optically Integrated InP-Si3N4 Hybrid Laser
AU - Fan, Youwen
AU - Epping, Jörn P.
AU - Oldenbeuving, Ruud M.
AU - Roeloffzen, Chris G.H.
AU - Hoekman, Marcel
AU - Dekker, Ronald
AU - Heideman, René G.
AU - van der Slot, Peter J.M.
AU - Boller, Klaus-J.
PY - 2016/12/1
Y1 - 2016/12/1
N2 - We describe the first demonstration and characterization of an optically integrated InP-Si3N4 hybrid laser. The laser is formed by integration of an InP-based reflective semiconductor optical amplifier with a InP-Si3N4 based feedback waveguide circuit. The circuit comprises a frequency selective and tunable Vernier mirror composed of two microring resonators with slightly different radii. A wide tuning range of more than 43 nm is achieved via the thermo-optic effect. The typical side mode suppression ratio is 35 dB. The narrowest linewidth achieved is about 90 kHz, and the relative intensity noise is less than -135 dBc/Hz.
AB - We describe the first demonstration and characterization of an optically integrated InP-Si3N4 hybrid laser. The laser is formed by integration of an InP-based reflective semiconductor optical amplifier with a InP-Si3N4 based feedback waveguide circuit. The circuit comprises a frequency selective and tunable Vernier mirror composed of two microring resonators with slightly different radii. A wide tuning range of more than 43 nm is achieved via the thermo-optic effect. The typical side mode suppression ratio is 35 dB. The narrowest linewidth achieved is about 90 kHz, and the relative intensity noise is less than -135 dBc/Hz.
U2 - 10.1109/JPHOT.2016.2633402
DO - 10.1109/JPHOT.2016.2633402
M3 - Article
VL - 8
SP - -
JO - IEEE photonics journal
JF - IEEE photonics journal
SN - 1943-0655
IS - 6
M1 - 1505111
ER -