Optically Integrated InP-Si3N4 Hybrid Laser

Youwen Fan, Jörn P. Epping, Ruud M. Oldenbeuving, Chris G.H. Roeloffzen, Marcel Hoekman, Ronald Dekker, René G. Heideman, Peter J.M. van der Slot, Klaus-J. Boller

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Abstract

We describe the first demonstration and characterization of an optically integrated InP-Si3N4 hybrid laser. The laser is formed by integration of an InP-based reflective semiconductor optical amplifier with a InP-Si3N4 based feedback waveguide circuit. The circuit comprises a frequency selective and tunable Vernier mirror composed of two microring resonators with slightly different radii. A wide tuning range of more than 43 nm is achieved via the thermo-optic effect. The typical side mode suppression ratio is 35 dB. The narrowest linewidth achieved is about 90 kHz, and the relative intensity noise is less than -135 dBc/Hz.
Original languageEnglish
Article number1505111
Pages (from-to)-
Number of pages12
JournalIEEE photonics journal
Volume8
Issue number6
DOIs
Publication statusPublished - 1 Dec 2016

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    Fan, Y., Epping, J. P., Oldenbeuving, R. M., Roeloffzen, C. G. H., Hoekman, M., Dekker, R., ... Boller, K-J. (2016). Optically Integrated InP-Si3N4 Hybrid Laser. IEEE photonics journal, 8(6), -. [1505111]. https://doi.org/10.1109/JPHOT.2016.2633402