Optically Integrated InP-Si3N4 Hybrid Laser

Youwen Fan, Jörn P. Epping, Ruud M. Oldenbeuving, Chris G.H. Roeloffzen, Marcel Hoekman, Ronald Dekker, René G. Heideman, Peter J.M. van der Slot, Klaus-J. Boller

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Abstract

We describe the first demonstration and characterization of an optically integrated InP-Si3N4 hybrid laser. The laser is formed by integration of an InP-based reflective semiconductor optical amplifier with a InP-Si3N4 based feedback waveguide circuit. The circuit comprises a frequency selective and tunable Vernier mirror composed of two microring resonators with slightly different radii. A wide tuning range of more than 43 nm is achieved via the thermo-optic effect. The typical side mode suppression ratio is 35 dB. The narrowest linewidth achieved is about 90 kHz, and the relative intensity noise is less than -135 dBc/Hz.
Original languageEnglish
Article number1505111
Pages (from-to)-
Number of pages12
JournalIEEE photonics journal
Volume8
Issue number6
DOIs
Publication statusPublished - 1 Dec 2016

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Semiconductor optical amplifiers
Networks (circuits)
Lasers
noise intensity
light amplifiers
Linewidth
lasers
Resonators
Optics
Mirrors
Waveguides
Demonstrations
Tuning
resonators
tuning
retarding
optics
mirrors
waveguides
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Fan, Y., Epping, J. P., Oldenbeuving, R. M., Roeloffzen, C. G. H., Hoekman, M., Dekker, R., ... Boller, K-J. (2016). Optically Integrated InP-Si3N4 Hybrid Laser. IEEE photonics journal, 8(6), -. [1505111]. https://doi.org/10.1109/JPHOT.2016.2633402
Fan, Youwen ; Epping, Jörn P. ; Oldenbeuving, Ruud M. ; Roeloffzen, Chris G.H. ; Hoekman, Marcel ; Dekker, Ronald ; Heideman, René G. ; van der Slot, Peter J.M. ; Boller, Klaus-J. / Optically Integrated InP-Si3N4 Hybrid Laser. In: IEEE photonics journal. 2016 ; Vol. 8, No. 6. pp. -.
@article{a1ce9f0e629c4b6191a324f4a8856990,
title = "Optically Integrated InP-Si3N4 Hybrid Laser",
abstract = "We describe the first demonstration and characterization of an optically integrated InP-Si3N4 hybrid laser. The laser is formed by integration of an InP-based reflective semiconductor optical amplifier with a InP-Si3N4 based feedback waveguide circuit. The circuit comprises a frequency selective and tunable Vernier mirror composed of two microring resonators with slightly different radii. A wide tuning range of more than 43 nm is achieved via the thermo-optic effect. The typical side mode suppression ratio is 35 dB. The narrowest linewidth achieved is about 90 kHz, and the relative intensity noise is less than -135 dBc/Hz.",
author = "Youwen Fan and Epping, {J{\"o}rn P.} and Oldenbeuving, {Ruud M.} and Roeloffzen, {Chris G.H.} and Marcel Hoekman and Ronald Dekker and Heideman, {Ren{\'e} G.} and {van der Slot}, {Peter J.M.} and Klaus-J. Boller",
year = "2016",
month = "12",
day = "1",
doi = "10.1109/JPHOT.2016.2633402",
language = "English",
volume = "8",
pages = "--",
journal = "IEEE photonics journal",
issn = "1943-0655",
publisher = "IEEE",
number = "6",

}

Fan, Y, Epping, JP, Oldenbeuving, RM, Roeloffzen, CGH, Hoekman, M, Dekker, R, Heideman, RG, van der Slot, PJM & Boller, K-J 2016, 'Optically Integrated InP-Si3N4 Hybrid Laser' IEEE photonics journal, vol. 8, no. 6, 1505111, pp. -. https://doi.org/10.1109/JPHOT.2016.2633402

Optically Integrated InP-Si3N4 Hybrid Laser. / Fan, Youwen; Epping, Jörn P.; Oldenbeuving, Ruud M.; Roeloffzen, Chris G.H.; Hoekman, Marcel; Dekker, Ronald; Heideman, René G.; van der Slot, Peter J.M.; Boller, Klaus-J.

In: IEEE photonics journal, Vol. 8, No. 6, 1505111, 01.12.2016, p. -.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Optically Integrated InP-Si3N4 Hybrid Laser

AU - Fan, Youwen

AU - Epping, Jörn P.

AU - Oldenbeuving, Ruud M.

AU - Roeloffzen, Chris G.H.

AU - Hoekman, Marcel

AU - Dekker, Ronald

AU - Heideman, René G.

AU - van der Slot, Peter J.M.

AU - Boller, Klaus-J.

PY - 2016/12/1

Y1 - 2016/12/1

N2 - We describe the first demonstration and characterization of an optically integrated InP-Si3N4 hybrid laser. The laser is formed by integration of an InP-based reflective semiconductor optical amplifier with a InP-Si3N4 based feedback waveguide circuit. The circuit comprises a frequency selective and tunable Vernier mirror composed of two microring resonators with slightly different radii. A wide tuning range of more than 43 nm is achieved via the thermo-optic effect. The typical side mode suppression ratio is 35 dB. The narrowest linewidth achieved is about 90 kHz, and the relative intensity noise is less than -135 dBc/Hz.

AB - We describe the first demonstration and characterization of an optically integrated InP-Si3N4 hybrid laser. The laser is formed by integration of an InP-based reflective semiconductor optical amplifier with a InP-Si3N4 based feedback waveguide circuit. The circuit comprises a frequency selective and tunable Vernier mirror composed of two microring resonators with slightly different radii. A wide tuning range of more than 43 nm is achieved via the thermo-optic effect. The typical side mode suppression ratio is 35 dB. The narrowest linewidth achieved is about 90 kHz, and the relative intensity noise is less than -135 dBc/Hz.

U2 - 10.1109/JPHOT.2016.2633402

DO - 10.1109/JPHOT.2016.2633402

M3 - Article

VL - 8

SP - -

JO - IEEE photonics journal

JF - IEEE photonics journal

SN - 1943-0655

IS - 6

M1 - 1505111

ER -

Fan Y, Epping JP, Oldenbeuving RM, Roeloffzen CGH, Hoekman M, Dekker R et al. Optically Integrated InP-Si3N4 Hybrid Laser. IEEE photonics journal. 2016 Dec 1;8(6):-. 1505111. https://doi.org/10.1109/JPHOT.2016.2633402